Patents by Inventor Maju TOMURA

Maju TOMURA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240063026
    Abstract: An etching method of the present disclosure includes preparing a substrate having a first region and a second region, the substrate including a multilayer film in which two or more types of silicon containing films are stacked in the first region, and a monolayer film formed from one type of silicon containing film in the second region, and etching the multilayer film and the monolayer film at the same time, in which in the etching, the multilayer film and the monolayer film are etched at the same time by plasma generated from a processing gas that contains a hydrogen fluoride gas, a phosphorus containing gas, and a carbon containing gas, a first recess having a first width is formed in the multilayer film, and a second recess having a second width wider than the first width is formed in the monolayer film.
    Type: Application
    Filed: November 3, 2023
    Publication date: February 22, 2024
    Applicant: Tokyo Electron Limited
    Inventors: Maju TOMURA, Satoshi OHUCHIDA
  • Publication number: 20240038494
    Abstract: An etching method includes: steps a), b), c), and d). Step a) provides a substrate having an underlying layer and an etching target film formed on the underlying layer, on a stage. Step b) generates plasma from a processing gas. Step c) supplies a bias power having a first frequency to the stage to etch the etching target film, thereby forming a recess. Step d) changes a frequency of the bias power to a second frequency different from the first frequency according to an aspect ratio of the recess after step c), to further etch the etching target film. After a generation of the plasma, the etching target film is continuously etched during a time period until the underlying layer is exposed.
    Type: Application
    Filed: August 27, 2021
    Publication date: February 1, 2024
    Applicant: Tokyo Electron Limited
    Inventors: Maju TOMURA, Ryutaro SUDA, Nobuyuki FUKUI
  • Publication number: 20240030010
    Abstract: An etching method includes: (a) providing a substrate including a base film and a mask having an opening and formed on the base film; (b) etching the base film using plasma; and (c) supplying hydrogen fluoride to the substrate under a pressure of 13.3 Pa or higher.
    Type: Application
    Filed: July 25, 2023
    Publication date: January 25, 2024
    Applicant: Tokyo Electron Limited
    Inventors: Koki MUKAIYAMA, Maju TOMURA, Yoshihide KIHARA
  • Publication number: 20240006152
    Abstract: A method for etching a substrate includes: (a) providing a substrate processing apparatus including a processing chamber that forms a processing space, a substrate support provided inside the processing chamber to hold a substrate, and a power supply that supplies a bias power to at least the substrate support; (b) providing the substrate on the substrate support, the substrate including an underlying layer and an organic material layer on the underlying layer; (c) generating plasma in the processing chamber; and (d) repeating a predetermined cycle including an ON time during which the bias power is supplied to the substrate support and an OFF time during which the bias power is not supplied to the substrate support. The OFF time is 10 msec or longer.
    Type: Application
    Filed: September 14, 2023
    Publication date: January 4, 2024
    Applicant: Tokyo Electron Limited
    Inventors: Maju TOMURA, Nobuyuki FUKUI, Yoshihide KIHARA
  • Publication number: 20240006168
    Abstract: A substrate processing method includes: (a) disposing a substrate on a substrate support provided in a chamber of a substrate processing apparatus; (b) supplying a processing gas including hydrogen fluoride gas into the chamber; (c) controlling a temperature of the substrate support to a first temperature, and a pressure of the hydrogen fluoride gas in the chamber to a first pressure; and (d) controlling the temperature of the substrate support to a second temperature, and the pressure of the hydrogen fluoride gas in the chamber to a second pressure. In a graph with a horizontal axis indicating a temperature and a vertical axis indicating a pressure, the first temperature and the first pressure are positioned in a first region above an adsorption equilibrium pressure curve of hydrogen fluoride, and the second temperature and the second pressure are positioned in a second region below the adsorption equilibrium pressure curve.
    Type: Application
    Filed: September 18, 2023
    Publication date: January 4, 2024
    Applicant: Tokyo Electron Limited
    Inventors: Satoshi OHUCHIDA, Koki MUKAIYAMA, Yusuke WAKO, Maju TOMURA, Yoshihide KIHARA
  • Publication number: 20230402289
    Abstract: An etching method is implementable with a plasma processing apparatus including a chamber. The method includes (a) providing, in the chamber, a substrate including an etching target film and a mask on the etching target film, and (b) etching the etching target film using plasma generated from a process gas including a hydrogen fluoride gas. The mask contains at least one metal selected from the group consisting of tungsten, molybdenum, ruthenium, titanium, indium, gallium, and zinc.
    Type: Application
    Filed: June 9, 2023
    Publication date: December 14, 2023
    Applicant: Tokyo Electron Limited
    Inventors: Kae TAKAHASHI, Maju TOMURA, Yoshihide KIHARA, Noriyoshi ARIMA
  • Publication number: 20230395390
    Abstract: A method including providing a substrate in a process chamber of a substrate processing apparatus, the substrate having a first region containing a silicon oxide film and a second region containing a film other than the silicon oxide film; adsorbing hydrogen fluoride on the substrate; and exposing the substrate with the absorbed hydrogen fluoride to plasma generated from an inert gas to selectively etch the first region with respect to the second region.
    Type: Application
    Filed: August 24, 2023
    Publication date: December 7, 2023
    Applicant: Tokyo Electron Limited
    Inventors: Maju TOMURA, Satoshi OHUCHIDA, Yoshihide KIHARA
  • Publication number: 20230386800
    Abstract: A substrate processing method includes: providing a substrate processing apparatus including a chamber, a substrate support that supports a substrate in the chamber, an upper electrode facing a center of the substrate, and a plurality of electromagnets arranged radially around the center of the upper electrode; selecting a polarity modification pattern to be used for the plurality of electromagnets during an etching; and generating plasma from a processing gas supplied into the chamber, and etching the substrate based on the polarity modification pattern.
    Type: Application
    Filed: May 23, 2023
    Publication date: November 30, 2023
    Applicant: Tokyo Electron Limited
    Inventors: Tomohiko NIIZEKI, Maju TOMURA, Yoshihide KIHARA
  • Publication number: 20230377850
    Abstract: The purpose of this disclosure is to provide an etching method. This method includes: (a) providing a substrate on a substrate support in a chamber, the substrate including a silicon-containing film and a mask on the silicon-containing film, the silicon-containing film including silicon and nitrogen; (b) supplying a process gas to the chamber, the process gas containing a hydrogen fluoride gas and a chlorine-containing gas, where a flow rate of the chlorine-containing gas is 1.5 volume % or more of a total flow of the process gas excluding an inert gas; and (c) generating a plasma from the process gas to etch the silicon-containing film.
    Type: Application
    Filed: May 17, 2023
    Publication date: November 23, 2023
    Inventors: Satoshi OHUCHIDA, Masahito YAMAGUCHI, Takatoshi ORUI, Maju TOMURA
  • Patent number: 11810791
    Abstract: An etching method includes forming a film on a surface of a substrate. The substrate has a region at least partially made of silicon oxide and a mask. The mask is provided on the region and includes an opening that partially exposes the region. The film is made of the same material as that of the region. The film is formed to correct a shape of a side wall defining the opening to a vertical shape. The etching method further includes etching the region.
    Type: Grant
    Filed: January 28, 2021
    Date of Patent: November 7, 2023
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Hironari Sasagawa, Maju Tomura
  • Patent number: 11798793
    Abstract: A substrate processing method includes: (a) disposing a substrate on a substrate support provided in a chamber of a substrate processing apparatus; (b) supplying a processing gas including hydrogen fluoride gas into the chamber; (c) controlling a temperature of the substrate support to a first temperature, and a pressure of the hydrogen fluoride gas in the chamber to a first pressure; and (d) controlling the temperature of the substrate support to a second temperature, and the pressure of the hydrogen fluoride gas in the chamber to a second pressure. In a graph with a horizontal axis indicating a temperature and a vertical axis indicating a pressure, the first temperature and the first pressure are positioned in a first region above an adsorption equilibrium pressure curve of hydrogen fluoride, and the second temperature and the second pressure are positioned in a second region below the adsorption equilibrium pressure curve.
    Type: Grant
    Filed: January 25, 2022
    Date of Patent: October 24, 2023
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Satoshi Ohuchida, Koki Mukaiyama, Yusuke Wako, Maju Tomura, Yoshihide Kihara
  • Publication number: 20230317466
    Abstract: An etching method includes (a) providing a substrate having a first silicon containing film and a second silicon containing film including at least a silicon containing film of which type is different from the first silicon containing film, on a substrate support in a chamber, (b) supplying a processing gas including a HF gas and a phosphorus containing gas into the chamber, and (c) etching the first silicon containing film and the second silicon containing film by generating plasma from the processing gas in the chamber by a source RF signal and generating a bias potential on the substrate by a bias signal.
    Type: Application
    Filed: March 29, 2023
    Publication date: October 5, 2023
    Applicant: Tokyo Electron Limited
    Inventors: Satoshi OHUCHIDA, Masahito YAMAGUCHI, Maju TOMURA
  • Publication number: 20230307245
    Abstract: A plasma processing method executed by a plasma processing apparatus having a chamber is provided. The method includes: (a) providing a substrate having a silicon containing film and a mask on the silicon containing film; and (b) etching the silicon containing film, the (b) including (b-1) etching the silicon containing film by using a plasma generated from a first processing gas containing a hydrogen fluoride gas and a tungsten containing gas, and (b-2) etching the silicon containing film by using a plasma generated from a second processing gas containing a hydrogen fluoride gas, the second processing gas not containing a tungsten containing gas, or containing a tungsten containing gas at a flow ratio smaller than a flow ratio of the tungsten containing gas in the first processing gas.
    Type: Application
    Filed: March 23, 2023
    Publication date: September 28, 2023
    Applicant: Tokyo Electron Limited
    Inventors: Koki MUKAIYAMA, Maju TOMURA, Yoshihide KIHARA, Atsushi TAKAHASHI, Takatoshi ORUI
  • Publication number: 20230307243
    Abstract: An etching method includes: (a) providing a substrate having a silicon-containing film and a mask on the silicon-containing film in a chamber of a plasma processing apparatus, and (b) etching the silicon-containing film by generating plasma from a processing gas containing HF gas, and PClaFb gas (each of a and b is an integer of 1 or more) or PCcHdFe gas (c is an integer of 0 or more, and each of d and e is an integer of 1 or more), in the chamber.
    Type: Application
    Filed: March 22, 2023
    Publication date: September 28, 2023
    Applicant: Tokyo Electron Limited
    Inventors: Maju TOMURA, Yoshihide KIHARA
  • Publication number: 20230268191
    Abstract: An etching method includes (a) providing a substrate in a chamber in a plasma processing apparatus. The substrate includes a silicon-containing film. The etching method further includes (b) etching the silicon-containing film with a chemical species in plasma generated from a process gas in the chamber. The process gas contains a hydrogen fluoride gas and a phosphorus-containing gas.
    Type: Application
    Filed: April 28, 2023
    Publication date: August 24, 2023
    Applicant: Tokyo Electron Limited
    Inventors: Maju TOMURA, Takatoshi ORUI, Kae KUMAGAI, Ryutaro SUDA, Satoshi OHUCHIDA, Yusuke WAKO, Yoshihide KIHARA
  • Patent number: 11728166
    Abstract: Provided is a method of processing a substrate including an etching target film and a mask having an opening formed on the etching target film. The method includes a) providing the substrate on a stage in a chamber and b) forming a film having a thickness that differs along a film thickness direction of the mask, on a side wall of the opening.
    Type: Grant
    Filed: February 27, 2020
    Date of Patent: August 15, 2023
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Sho Kumakura, Maju Tomura, Yoshihide Kihara, Hironari Sasagawa
  • Publication number: 20230251567
    Abstract: An etching method comprises (a) providing a substrate in a chamber, the substrate including a silicon-containing film and a mask on the silicon-containing film; and (b) etching the silicon-containing film, including (b-1) etching the silicon-containing film using plasma generated from a first process gas, the first process gas containing a hydrogen fluoride gas and a reaction control gas to control a reaction between hydrogen fluoride and the silicon-containing film, the first process gas containing, as the reaction control gas, at least one of a reaction accelerator gas to accelerate the reaction or a reaction inhibitor gas to inhibit the reaction, and (b-2) etching the silicon-containing film using plasma generated from a second process gas, the second process gas containing a hydrogen fluoride gas, and containing at least one of a reaction accelerator gas to accelerate the reaction or a reaction inhibitor gas to inhibit the reaction.
    Type: Application
    Filed: March 15, 2023
    Publication date: August 10, 2023
    Applicant: Tokyo Electron Limited
    Inventors: Ryutaro SUDA, Maju TOMURA, Yoshihide KIHARA, Taiki MIURA, Jaeyoung PARK, Yusuke FUKUNAGA
  • Publication number: 20230245898
    Abstract: Provided is a plasma processing method performed with a plasma processing apparatus including a chamber. The method includes: (a) providing a substrate in the chamber, the substrate having an organic film and a mask on the organic film, the mask including a silicon-containing film and a carbon-containing film on the silicon-containing film; and (b) forming a plasma from a processing gas in the chamber, the processing gas including an oxygen-containing gas and a gas containing Si or W and a halogen. (b) includes: (b1) forming a protective film on at least the carbon-containing film of the mask; and (b2) etching the organic film through the mask having the protective film formed thereon.
    Type: Application
    Filed: January 30, 2023
    Publication date: August 3, 2023
    Inventors: Tomohiko NIIZEKI, Maju TOMURA, Yoshihide KIHARA
  • Publication number: 20230230844
    Abstract: A technique improves etch selectivity. An etching includes (a) providing, in a chamber, a substrate including an underlying film and a silicon-containing film on the underlying film, (b) etching the silicon-containing film to form a recess with first plasma generated from a first process gas containing a hydrogen fluoride gas until before the underlying film is exposed at the recess or until the underlying film is partly exposed at the recess, and (c) further etching the silicon-containing film at the recess under a condition different from a condition of (b).
    Type: Application
    Filed: March 14, 2023
    Publication date: July 20, 2023
    Applicant: Tokyo Electron Limited
    Inventors: Maju TOMURA, Yoshihide KIHARA, Masanobu HONDA
  • Publication number: 20230223249
    Abstract: A substrate processing method includes providing a substrate with a silicon-containing film in a chamber, supplying a process gas containing an HF gas, a phosphorus halide gas, and at least one gas selected from the group consisting of a C4H2F6 gas, a C4H2F8 gas, a C3H2F4 gas, and a C3H2F6 gas into the chamber to generate plasma, and etching the silicon-containing film in the substrate.
    Type: Application
    Filed: March 15, 2023
    Publication date: July 13, 2023
    Applicant: Tokyo Electron Limited
    Inventors: Motoi TAKAHASHI, Ryutaro SUDA, Maju TOMURA, Takatoshi ORUI, Yoshihide KIHARA