Patents by Inventor Maju TOMURA

Maju TOMURA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11139169
    Abstract: An etching method and an etching apparatus improve the shape of a mask deformed by an etching process. The etching method for etching a film with plasma includes a step of providing a substrate, an etching step, and a correction step. In the step of providing a substrate, a substrate having a mask formed on a first film is provided. In the etching step, the first film is etched with plasma generated from a first gas containing Xe, Kr, or Rn so that an aspect ratio of a hole or a groove formed in the first film is 30 or more. In the correction step, the shape of the mask is corrected with plasma generated from a second gas.
    Type: Grant
    Filed: June 15, 2020
    Date of Patent: October 5, 2021
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Sho Kumakura, Satoshi Ohuchida, Maju Tomura
  • Patent number: 11127600
    Abstract: An etching method includes: providing a substrate including a silicon oxide film on a stage; controlling a surface temperature of the substrate to be ?70° C. or lower; and etching the silicon oxide film with plasma generated by supplying a radio-frequency power to a gas containing fluorine and hydrogen, after the controlling the surface temperature of the substrate; and increasing the surface temperature of the substrate to volatilize a by-product generated by the etching.
    Type: Grant
    Filed: February 18, 2020
    Date of Patent: September 21, 2021
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Koki Tanaka, Maju Tomura
  • Patent number: 11114304
    Abstract: A substrate processing method includes providing a processing target substrate having a pattern, forming a film on the substrate, forming a reaction layer on a surface layer of the substrate by plasma, and removing the reaction layer by applying energy to the substrate.
    Type: Grant
    Filed: September 9, 2019
    Date of Patent: September 7, 2021
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Takayuki Katsunuma, Toru Hisamatsu, Shinya Ishikawa, Yoshihide Kihara, Masanobu Honda, Maju Tomura, Sho Kumakura
  • Publication number: 20210272780
    Abstract: A plasma processing apparatus includes a pedestal to receive a substrate thereon; a temperature control mechanism provided in the pedestal; a heat transfer gas supply mechanism configured to supply a heat transfer gas to a back surface of the substrate; a first radio frequency power source configured to output first high frequency power having a first frequency; a second radio frequency power source configured to output second high frequency power having a second frequency that is lower than the first frequency; and a temperature measurement unit configured to control a surface temperature of the substrate to have a temperature lower than ?35 degrees C. by using the temperature control mechanism provided in the pedestal and to perform feedback control of stopping the output of the second radio frequency power from the second radio frequency power source.
    Type: Application
    Filed: May 14, 2021
    Publication date: September 2, 2021
    Applicant: Tokyo Electron Limited
    Inventors: Maju TOMURA, Ryohei TAKEDA, Ryuichi TAKASHIMA, Yoshinobu OOYA
  • Patent number: 11101138
    Abstract: Provided is a method of etching a silicon-containing film made of at least one of silicon oxide and silicon nitride. The etching method includes: (i) preparing a workpiece having a silicon-containing film and a mask provided on the silicon-containing film in a chamber body of a plasma processing apparatus, in which an opening is formed in the mask; and (ii) etching the silicon-containing film, in which plasma is produced in the chamber body from processing gas containing fluorine, hydrogen, and iodine in order to etch the silicon-containing film, and a temperature of the workpiece is set to a temperature of 0° C. or less.
    Type: Grant
    Filed: January 31, 2020
    Date of Patent: August 24, 2021
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Maju Tomura, Yoshihide Kihara, Masanobu Honda
  • Publication number: 20210233777
    Abstract: An etching method includes forming a film on a surface of a substrate. The substrate has a region at least partially made of silicon oxide and a mask. The mask is provided on the region and includes an opening that partially exposes the region. The film is made of the same material as that of the region. The film is formed to correct a shape of a side wall defining the opening to a vertical shape. The etching method further includes etching the region.
    Type: Application
    Filed: January 28, 2021
    Publication date: July 29, 2021
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Hironari SASAGAWA, Maju TOMURA
  • Publication number: 20210233778
    Abstract: An etching method includes forming a film on a surface of a substrate having a region to be etched and a mask. The mask is provided on the region and includes an opening that partially exposes the region. The film is made of the same material as that of the region. The etching method further includes etching the region.
    Type: Application
    Filed: January 28, 2021
    Publication date: July 29, 2021
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Maju TOMURA, Tomohiko NIIZEKI, Takayuki KATSUNUMA, Hironari SASAGAWA, Yuta NAKANE, Shinya ISHIKAWA, Kenta ONO, Sho KUMAKURA, Yusuke TAKINO, Masanobu HONDA
  • Publication number: 20210202261
    Abstract: An etching method includes: providing, on a stage, a substrate including an etching film containing a silicon oxide film, and a mask formed on the etching film; setting a temperature of the stage to be 0° C. or less; and generating plasma from a gas containing fluorine, nitrogen, and carbon, and having a ratio of the number of fluorine to the number of nitrogen (F/N) in a range of 0.5 to 10, thereby etching the silicon oxide film through the mask.
    Type: Application
    Filed: December 22, 2020
    Publication date: July 1, 2021
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Ryutaro SUDA, Maju TOMURA
  • Publication number: 20210202233
    Abstract: A substrate processing method suppresses a shape abnormality of a pattern formed on a substrate. The substrate processing method executed by a substrate processing apparatus includes step a), step b), and step c). The step a) is a step of providing a substrate including an etching target film and a mask layer formed on the etching target film in which the mask layer has an opening. The step b) is a step of forming a protective film on an upper portion of an opening of the mask. The step c) is a step of etching the mask while suppressing a variation of an opening dimension of the upper portion of the opening by the protective film, and varying a dimension of a lower portion of the opening not covered by the protective film.
    Type: Application
    Filed: December 21, 2020
    Publication date: July 1, 2021
    Applicant: Tokyo Electron Limited
    Inventors: Tomohiko NIIZEKI, Maju TOMURA, Yoshihide KIHARA
  • Publication number: 20210193477
    Abstract: A system, apparatus and method enable etching of a layer of a substrate with reduced etching on the surface of a side wall of the layer. The etching method includes forming a protective layer on a surface of the side wall defining a recess in the layer. The protective layer contains phosphorus. The etching method further includes etching the layer in one or more additional cycles so as to increase a depth of the recess after the forming the protective layer.
    Type: Application
    Filed: December 8, 2020
    Publication date: June 24, 2021
    Applicant: Tokyo Electron Limited
    Inventors: Shinya ISHIKAWA, Kenta ONO, Maju TOMURA, Masanobu HONDA
  • Publication number: 20210159085
    Abstract: A technique improves selectivity in etching of a silicon-containing film over etching of a mask in plasma etching. A substrate processing method includes placing a substrate in a chamber in a plasma processing apparatus. The substrate includes a silicon-containing film and a mask on the silicon-containing film. The substrate processing method further includes generating plasma from a first process gas containing a hydrogen fluoride gas in the chamber. The generating plasma includes etching the silicon-containing film with a chemical species contained in the plasma. A flow rate of the hydrogen fluoride gas is at least 25 vol % of a total flow rate of the non-inert components of the first process gas.
    Type: Application
    Filed: November 9, 2020
    Publication date: May 27, 2021
    Applicant: Tokyo Electron Limited
    Inventors: Ryutaro SUDA, Maju TOMURA
  • Publication number: 20210159084
    Abstract: A technique improves pattern features formed by etching and the uniformity of the features across the surface of a substrate. An etching method includes steps a), b), c), d), and e). Step a) includes placing, on a support, a substrate including a target film. Step b) includes partially etching the target film and forming a recess. Step c) includes setting the temperature of the support at a first temperature, and forming, on a sidewall of the recess, a first film having a first film thickness distribution. Step d) includes partially further etching the target film having the first film formed on the target film. Step e) includes setting the temperature of the support at a second temperature different from the first temperature, and forming, on the sidewall of the recess, a second film having a second film thickness distribution different from the first film thickness distribution.
    Type: Application
    Filed: November 20, 2020
    Publication date: May 27, 2021
    Applicant: Tokyo Electron Limited
    Inventors: Maju Tomura, Sho Kumakura, Hironari Sasagawa, Yoshihide Kihara
  • Publication number: 20210159089
    Abstract: A technique improves selectivity in etching of a silicon-containing film over etching of a mask in plasma etching. A substrate processing method includes placing a substrate in a chamber in a plasma processing apparatus. The substrate includes a silicon-containing film and a mask on the silicon-containing film. The substrate processing method further includes generating plasma from a first process gas containing a hydrogen fluoride gas in the chamber. The generating plasma includes etching the silicon-containing film with a chemical species contained in the plasma. A flow rate of the hydrogen fluoride gas is at least 80 vol % of a total flow rate of non-inert components of the first process gas.
    Type: Application
    Filed: November 9, 2020
    Publication date: May 27, 2021
    Applicant: Tokyo Electron Limited
    Inventors: Ryutaro SUDA, Maju TOMURA
  • Publication number: 20210151301
    Abstract: A method for etching a film includes: supplying a precursor gas to the substrate, thereby forming a precursor layer on a substrate; and etching the film with a chemical species from plasma formed from a processing gas so as to increase a depth of the opening, and form a protective region from the precursor layer with the chemical species or another chemical species from the plasma. A plurality of cycles each including the supplying the precursor gas and the etching the film is executed. A temperature of the substrate during execution of the etching the film included in at least one cycle of the plurality of cycles and a temperature of the substrate during execution of the etching the film included in at least one other cycle of the plurality of cycles are set to be different from each other.
    Type: Application
    Filed: November 11, 2020
    Publication date: May 20, 2021
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Tomohiko NIIZEKI, Takayuki KATSUNUMA, Yoshihide KIHARA, Maju TOMURA
  • Publication number: 20210143028
    Abstract: An etching method enables plasma etching of a silicon-containing film with reduced lateral etching. The etching method includes providing a substrate in a chamber included in a plasma processing apparatus. The substrate includes a silicon-containing film. The etching method further includes setting a flow rate proportion of a phosphorus-containing gas with respect to a total flow rate of the process gas so as to establish a predetermined ratio of an etching rate of an alternate stack of a silicon oxide film and a silicon nitride film to an etching rate of the silicon oxide film.
    Type: Application
    Filed: November 6, 2020
    Publication date: May 13, 2021
    Applicant: Tokyo Electron Limited
    Inventors: Takahiro YOKOYAMA, Maju TOMURA, Yoshihide KIHARA, Ryutaro SUDA, Takatoshi ORUI
  • Publication number: 20210143016
    Abstract: An etching method of an exemplary embodiment involves providing a substrate in a chamber of a plasma treatment system. The substrate includes a silicon-containing film. The method further involves etching the silicon-containing film by a chemical species in plasma generated from a process gas in the chamber. The process gas contains a halogen gas component and phosphorous gas component.
    Type: Application
    Filed: July 16, 2020
    Publication date: May 13, 2021
    Applicant: Tokyo Electron Limited
    Inventors: Takahiro YOKOYAMA, Maju TOMURA, Yoshihide KIHARA, Ryutaro SUDA, Takatoshi ORUI
  • Publication number: 20210143017
    Abstract: A technique protects a mask in plasma etching of a silicon-containing film. An etching method includes providing a substrate in a chamber included in a plasma processing apparatus. The substrate includes a silicon-containing film and a mask. The mask contains carbon. The etching method further includes etching the silicon-containing film with a chemical species in plasma generated from a process gas in the chamber. The process gas contains a halogen and phosphorus. The etching includes forming a carbon-phosphorus bond on a surface of the mask.
    Type: Application
    Filed: November 6, 2020
    Publication date: May 13, 2021
    Applicant: Tokyo Electron Limited
    Inventors: Takahiro YOKOYAMA, Maju TOMURA, Yoshihide KIHARA, Satoshi OHUCHIDA
  • Publication number: 20210082709
    Abstract: An etching method includes preparing a compound; and etching an etching target in an environment in which the compound is present. The etching of the etching target includes: etching the etching target in an environment in which hydrogen (H) and fluorine (F) are present when the etching target contains silicon nitride (SiN); and etching the etching target in an environment in which nitrogen (N), hydrogen (H) and fluorine (F) are present when the etching target contains silicon (Si). The compound contains an element that forms an anion of an acid stronger than hydrogen fluoride (HF) or contains an element that forms a cation of a base stronger than ammonia (NH3).
    Type: Application
    Filed: May 31, 2019
    Publication date: March 18, 2021
    Inventors: Maju Tomura, Yoshihide Kihara, Masanobu Honda
  • Publication number: 20210066089
    Abstract: An etching method includes: preparing a compound in a processing space in which an etching target is accommodated; and etching the etching target with a mask film formed thereon, under an environment where the compound exists. The etching of the etching target includes etching the etching target under an environment where hydrogen (H) and fluorine (F) exist when the etching target contains silicon nitride (SiN), and etching the etching target under an environment where nitrogen (N), hydrogen (H), and fluorine (F) exist when the etching target contains silicon (Si). The compound includes at least one halogen element selected from a group consisting of carbon (C), chlorine (Cl), bromine (Br), and iodine (I).
    Type: Application
    Filed: August 28, 2020
    Publication date: March 4, 2021
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Takahiro YOKOYAMA, Maju TOMURA, Yoshihide KIHARA, Masanobu HONDA
  • Patent number: 10916420
    Abstract: A substrate processing method includes: providing a substrate in a processing container; selectively forming a first film on a surface of a substrate by plasma enhanced vapor deposition (PECVD); and forming a second film by atomic layer deposition (ALD) in a region of the substrate where the first film does not exist. The second film is formed by repeatedly performing a sequence including: forming a precursor layer on the surface of the substrate; purging an interior of the processing container after forming of the precursor; converting the precursor layer into the second film; and purging a space in the processing container after the converting. A plasma processing apparatus performing the method is also provided.
    Type: Grant
    Filed: August 29, 2019
    Date of Patent: February 9, 2021
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Masahiro Tabata, Toru Hisamatsu, Maju Tomura, Sho Kumakura, Hironari Sasagawa