Patents by Inventor Majumdar Amian

Majumdar Amian has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Extreme high mobility CMOS logic
    Patent number: 9548363
    Abstract: A CMOS device includes a PMOS transistor with a first quantum well structure and an NMOS device with a second quantum well structure. The PMOS and NMOS transistors are formed on a substrate.
    Type: Grant
    Filed: June 11, 2014
    Date of Patent: January 17, 2017
    Assignee: Intel Corporation
    Inventors: Suman Datta, Mantu K. Hudait, Mark L. Doczy, Jack T. Kavalieros, Majumdar Amian, Justin K. Brask, Been-Yih Jin, Matthew V. Metz, Robert S. Chau
  • EXTREME HIGH MOBILITY CMOS LOGIC
    Publication number: 20160111423
    Abstract: A CMOS device includes a PMOS transistor with a first quantum well structure and an NMOS device with a second quantum well structure. The PMOS and NMOS transistors are formed on a substrate.
    Type: Application
    Filed: December 21, 2015
    Publication date: April 21, 2016
    Inventors: Suman Datta, Mantu K. Hudait, Mark L. Doczy, Jack T. Kavalieros, Majumdar AmIan, Justin K. Brask, Been-Yih Jin, Matthew V. Metz, Robert S. Chau
  • EXTREME HIGH MOBILITY CMOS LOGIC
    Publication number: 20140291615
    Abstract: A CMOS device includes a PMOS transistor with a first quantum well structure and an NMOS device with a second quantum well structure. The PMOS and NMOS transistors are formed on a substrate.
    Type: Application
    Filed: June 11, 2014
    Publication date: October 2, 2014
    Inventors: Suman Datta, Mantu K. Hudait, Mark L. Doczy, Jack T. Kavalieros, Majumdar Amian, Justin K. Brask, Been-Yih Jin, Matthew V. Metz, Robert S. Chau
  • Extreme high mobility CMOS logic
    Patent number: 8802517
    Abstract: A CMOS device includes a PMOS transistor with a first quantum well structure and an NMOS device with a second quantum well structure. The PMOS and NMOS transistors are formed on a substrate.
    Type: Grant
    Filed: August 8, 2013
    Date of Patent: August 12, 2014
    Assignee: Intel Corporation
    Inventors: Suman Datta, Mantu K. Hudait, Mark L. Doczy, Jack T. Kavalieros, Majumdar Amian, Justin K. Brask, Been-Yih Jin, Matthew V. Metz, Robert S. Chau
  • EXTREME HIGH MOBILITY CMOS LOGIC
    Publication number: 20130328015
    Abstract: A CMOS device includes a PMOS transistor with a first quantum well structure and an NMOS device with a second quantum well structure. The PMOS and NMOS transistors are formed on a substrate.
    Type: Application
    Filed: August 8, 2013
    Publication date: December 12, 2013
    Inventors: Suman Datta, Mantu K. Hudait, Mark L. Doczy, Jack T. Kavalieros, Majumdar Amian, Justin K. Brask, Been-Yih Jin, Matthew V. Metz, Robert S. Chau
  • Extreme high mobility CMOS logic
    Patent number: 8518768
    Abstract: A CMOS device includes a PMOS transistor with a first quantum well structure and an NMOS device with a second quantum well structure. The PMOS and NMOS transistors are formed on a substrate.
    Type: Grant
    Filed: April 18, 2012
    Date of Patent: August 27, 2013
    Assignee: Intel Corporation
    Inventors: Suman Datta, Mantu K. Hudait, Mark L. Doczy, Jack T. Kavalieros, Majumdar Amian, Justin K. Brask, Been-Yih Jin, Matthew V. Metz, Robert S. Chau
  • EXTREME HIGH MOBILITY CMOS LOGIC
    Publication number: 20120199813
    Abstract: A CMOS device includes a PMOS transistor with a first quantum well structure and an NMOS device with a second quantum well structure. The PMOS and NMOS transistors are formed on a substrate.
    Type: Application
    Filed: April 18, 2012
    Publication date: August 9, 2012
    Applicant: Intel Corporation
    Inventors: Suman Datta, Mantu K. Hudait, Mark L. Doczy, Jack T. Kavalieros, Majumdar Amian, Justin K. Brask, Been-Yih Jin, Matthew V. Metz, Robert S. Chau