Abstract: A magnetic apparatus includes a first structure including a first non-magnetic material, a second structure including a second non-magnetic material on a first portion of the first structure, a third structure including the second non-magnetic material on a second portion of the first structure. The magnetic apparatus further includes a first magnetic structure adjacent to a first sidewall of the second structure, a second magnetic structure adjacent to a first sidewall of the third structure, a third magnetic structure adjacent to a second sidewall of the second structure, adjacent to a second sidewall of the third structure and extends onto a third portion of the first structure. A magnet is coupled with the first, second and third magnetic structures.

Abstract: A magnetic apparatus includes a first structure including a first non-magnetic material, a second structure including a second non-magnetic material on a first portion of the first structure, a third structure including the second non-magnetic material on a second portion of the first structure. The magnetic apparatus further includes a first magnetic structure adjacent to a first sidewall of the second structure, a second magnetic structure adjacent to a first sidewall of the third structure, a third magnetic structure adjacent to a second sidewall of the second structure, adjacent to a second sidewall of the third structure and extends onto a third portion of the first structure. A magnet is coupled with the first, second and third magnetic structures.

Abstract: A magnetic apparatus includes a first structure including a first non-magnetic material, a second structure including a second non-magnetic material on a first portion of the first structure, a third structure including the second non-magnetic material on a second portion of the first structure. The magnetic apparatus further includes a first magnetic structure adjacent to a first sidewall of the second structure, a second magnetic structure adjacent to a first sidewall of the third structure, a third magnetic structure adjacent to a second sidewall of the second structure, adjacent to a second sidewall of the third structure and extends onto a third portion of the first structure. A magnet is coupled with the first, second and third magnetic structures.

Abstract: A method for transferring micro-devices includes providing a device structure on a first layer over a first substrate and positioning an electromagnetic apparatus directly over the device structure. The method further includes activating an electromagnet in the electromagnetic apparatus to generate and confine a magnetic flux into a magnetic structure of the electromagnetic apparatus and magnetically couple the device structure to a surface of the magnetic structure proximal to the device structure. The method further includes lifting and removing the device structure from the first substrate and placing the device structure on a second layer over a second substrate, where the second substrate is separate from the first substrate. The method further includes releasing the device structure from the electromagnet, such that the device structure is decoupled from the electromagnet.

Abstract: An electromagnetic apparatus includes a non-magnetic body structure above a substrate. The electromagnetic apparatus further includes at least one isolation structure including a dielectric material on a portion of the body structure and a magnetic structure having two separate portions, one on each side of the isolation structure. A first magnetic structure portion is on a first sidewall of the isolation structure on an upper surface and on a first sidewall of the body structure and a second magnetic structure portion is on an opposite second sidewall of the isolation structure onto an upper surface and on to a second sidewall of the body structure. The electromagnetic apparatus further includes an electromagnet on a side opposite to the isolation structure. The electromagnet is coupled with the magnetic structure and is a source of the magnetic flux lines when energized.

Abstract: A method for transferring micro-devices includes providing a device structure on a first layer over a first substrate and positioning an electromagnetic apparatus directly over the device structure. The method further includes activating an electromagnet in the electromagnetic apparatus to generate and confine a magnetic flux into a magnetic structure of the electromagnetic apparatus and magnetically couple the device structure to a surface of the magnetic structure proximal to the device structure. The method further includes lifting and removing the device structure from the first substrate and placing the device structure on a second layer over a second substrate, where the second substrate is separate from the first substrate. The method further includes releasing the device structure from the electromagnet, such that the device structure is decoupled from the electromagnet.

Abstract: An electromagnetic apparatus includes a non-magnetic body structure above a substrate. The electromagnetic apparatus further includes at least one isolation structure including a dielectric material on a portion of the body structure and a magnetic structure having two separate portions, one on each side of the isolation structure. A first magnetic structure portion is on a first sidewall of the isolation structure on an upper surface and on a first sidewall of the body structure and a second magnetic structure portion is on an opposite second sidewall of the isolation structure onto an upper surface and on to a second sidewall of the body structure. The electromagnetic apparatus further includes an electromagnet on a side opposite to the isolation structure. The electromagnet is coupled with the magnetic structure and is a source of the magnetic flux lines when energized.

Abstract: An absorbing composition is described herein that includes at least one inorganic-based compound, at least one absorbing compound, and at least one material modification agent. In addition, methods of making an absorbing composition are also described that includes: a) combining at least one inorganic-based compound, at least one absorbing compound, at least one material modification agent, an acid/water mixture, and one or more solvents to form a reaction mixture; and b) allowing the reaction mixture to form the absorbing composition at room temperature. Another method of making an absorbing composition includes: a) combining at least one inorganic-based compound, at least one absorbing compound, at least one material modification agent, an acid/water mixture, and one or more solvents to form a reaction mixture; and b) heating the reaction mixture to form the absorbing composition.

Abstract: A plurality of metal interconnects incorporating dielectric spacers and a method to form such dielectric spacers are described. In one embodiment, the dielectric spacers adjacent to neighboring metal interconnects are discontiguous from one another. In another embodiment, the dielectric spacers may provide a region upon which un-landed vias may effectively land.

Abstract: An absorbing composition is described herein that includes at least one inorganic-based compound, at least one absorbing compound, and at least one material modification agent. In addition, methods of making an absorbing composition are also described that includes: a) combining at least one inorganic-based compound, at least one absorbing compound, at least one material modification agent, an acid/water mixture, and one or more solvents to form a reaction mixture; and b) allowing the reaction mixture to form the absorbing composition at room temperature. Another method of making an absorbing composition includes: a) combining at least one inorganic-based compound, at least one absorbing compound, at least one material modification agent, an acid/water mixture, and one or more solvents to form a reaction mixture; and b) heating the reaction mixture to form the absorbing composition.

Abstract: An absorbing composition is described herein that includes at least one inorganic-based compound, at least one absorbing compound, and at least one material modification agent. In addition, methods of making an absorbing composition are also described that includes: a) combining at least one inorganic-based compound, at least one absorbing compound, at least one material modification agent, and one or more solvents to form a reaction mixture, wherein the at least one material modification agent comprises at least one acid and water; and b) heating the reaction mixture to form an absorbing material, a coating or a film.

Abstract: A plurality of metal interconnects incorporating dielectric spacers and a method to form such dielectric spacers are described. In one embodiment, the dielectric spacers adjacent to neighboring metal interconnects are discontiguous from one another. In another embodiment, the dielectric spacers may provide a region upon which un-landed vias may effectively land.

Abstract: A plurality of metal interconnects incorporating dielectric spacers and a method to form such dielectric spacers are described. In one embodiment, the dielectric spacers adjacent to neighboring metal interconnects are discontiguous from one another. In another embodiment, the dielectric spacers may provide a region upon which un-landed vias may effectively land.

Abstract: A plurality of metal interconnects incorporating dielectric spacers and a method to form such dielectric spacers are described. In one embodiment, the dielectric spacers adjacent to neighboring metal interconnects are discontiguous from one another. In another embodiment, the dielectric spacers may provide a region upon which un-landed vias may effectively land.

Abstract: Described herein are embodiments of a method that includes forming a hard mask over an interlayer dielectric layer, patterning said hard mask, etching said interlayer dielectric layer, and removing said hard mask during a post-etch clean with a wet etchant having a selectivity to etch said hard mask at a greater rate than said interlayer dielectric layer.

Abstract: A plurality of metal interconnects incorporating dielectric spacers and a method to form such dielectric spacers are described. In one embodiment, the dielectric spacers adjacent to neighboring metal interconnects are discontiguous from one another. In another embodiment, the dielectric spacers may provide a region upon which un-landed vias may effectively land.

Abstract: A method may comprise assembling a first dielectric ensemble that comprises a first dielectric layer exhibiting a first porosity, a second dielectric layer exhibiting a second porosity and a third dielectric layer exhibiting a third porosity, and fabricating a first metal line in the dielectric ensemble. A chemical may be applied on the third layer to pass through and dissolve a portion of the second layer. The third layer acts to prevent a via that is partially landed on the dielectric from exposing the air gap underneath.

Abstract: A cleaning composition comprises at least quaternary ammonium hydroxide, a water-soluble organic solvent, water, an anticorrosive, and potassium hydroxide of 1 mass percent or less of a total amount of the solution. This cleaning composition can singly and effectively remove a photoresist film, a buried material, a metallic residue from the surface of a semiconductor substrate.

Abstract: Described herein are embodiments of a method that includes forming a hard mask over an interlayer dielectric layer, patterning said hard mask, etching said interlayer dielectric layer, and removing said hard mask during a post-etch clean with a wet etchant having a selectivity to etch said hard mask at a greater rate than said interlayer dielectric layer.

Abstract: Embodiments of the invention provide a method for producing ferroelectric polymer devices (FPMDs) employing conditions that avoid or reduce detrimental impact on the ferroelectric polymer film. For one embodiment, a damascene patterning metallization technique is used. For one embodiment a first metal layer is deposited on a substrate to form the bottom electrode for the FPMD. The first metal layer is capped with a selectively deposited diffusion barrier. A layer of ferroelectric polymer film is then deposited on the first conductive layer. The ferroelectric polymer film is planarized. A second metal layer is deposited on the ferroelectric polymer film layer to form the top electrode of the FPMD. The second metal layer is deposited such that the ferroelectric polymer film is not substantially degraded. For various alternative embodiments the various component processes may be accomplished at temperatures far below those employed in a conventional damascene patterning metallization process.