Patents by Inventor Makato Kamogawa

Makato Kamogawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Single crystal silicon pulling device, method for preventing contamination of silicon melt, and device for preventing contamination of silicon melt
    Patent number: 9080251
    Abstract: A velocity of Ar gas flow passing through between a lower end of a cylindrical body and a thermal shielding body is influenced by arrangement of a pulling path of single crystal silicon, a cylindrical body, and a thermal shielding body. Accordingly, the velocity of the Ar gas flow passing through between a lower end of the cylindrical body and the thermal shielding body is controlled by adjusting a relative position of the pulling path of the single crystal silicon, the cylindrical body, and the thermal shielding body. As described above, dust falling off to silicon melt can be reduced, thereby preventing deterioration in quality of the single crystal silicon.
    Type: Grant
    Filed: May 17, 2012
    Date of Patent: July 14, 2015
    Assignee: SUMCO TECHXIV CORPORATION
    Inventors: Makato Kamogawa, Koichi Shimomura, Yoshiyuki Suzuki, Daisuke Ebi
  • Single crystal silicon pulling apparatus, method for preventing contamination of silicon melt, and device for preventing contamination of silicon melt
    Patent number: 8404046
    Abstract: A velocity of Ar gas flow passing through between a lower end of a cylindrical body and a thermal shielding body is influenced by arrangement of a pulling path of single crystal silicon, a cylindrical body, and a thermal shielding body. Accordingly, the velocity of the Ar gas flow passing through between a lower end of the cylindrical body and the thermal shielding body is controlled by adjusting a relative position of the pulling path of the single crystal silicon, the cylindrical body, and the thermal shielding body. As described above, dust falling off to silicon melt can be reduced, thereby preventing deterioration in quality of the single crystal silicon.
    Type: Grant
    Filed: June 27, 2006
    Date of Patent: March 26, 2013
    Assignee: Sumco Techxiv Corporation
    Inventors: Makato Kamogawa, Koichi Shimomura, Yoshiyuki Suzuki, Daisuke Ebi
  • SINGLE CRYSTAL SILICON PULLING DEVICE, METHOD FOR PREVENTING CONTAMINATION OF SILICON MELT, AND DEVICE FOR PREVENTING CONTAMINATION OF SILICON MELT
    Publication number: 20120222613
    Abstract: A velocity of Ar gas flow passing through between a lower end of a cylindrical body and a thermal shielding body is influenced by arrangement of a pulling path of single crystal silicon, a cylindrical body, and a thermal shielding body. Accordingly, the velocity of the Ar gas flow passing through between a lower end of the cylindrical body and the thermal shielding body is controlled by adjusting a relative position of the pulling path of the single crystal silicon, the cylindrical body, and the thermal shielding body. As described above, dust falling off to silicon melt can be reduced, thereby preventing deterioration in quality of the single crystal silicon.
    Type: Application
    Filed: May 17, 2012
    Publication date: September 6, 2012
    Applicant: SUMCO TECHXIV KABUSHIKI KAISHA
    Inventors: Makato Kamogawa, Koichi Shimomura, Yoshiyuki Suzuki, Daisuke EBI
  • Single Crystal Silicon Pulling Apparatus, Method for Preventing Contamination of Silicon Melt, and Device for Preventing Contamination of Silicon Melt
    Publication number: 20090229512
    Abstract: A velocity of Ar gas flow passing through between a lower end of a cylindrical body and a thermal shielding body is influenced by arrangement of a pulling path of single crystal silicon, a cylindrical body, and a thermal shielding body. Accordingly, the velocity of the Ar gas flow passing through between a lower end of the cylindrical body and the thermal shielding body is controlled by adjusting a relative position of the pulling path of the single crystal silicon, the cylindrical body, and the thermal shielding body. As described above, dust falling off to silicon melt can be reduced, thereby preventing deterioration in quality of the single crystal silicon.
    Type: Application
    Filed: June 27, 2006
    Publication date: September 17, 2009
    Applicant: SUMCO TECHXIV CORPORATION
    Inventors: Makato Kamogawa, Koichi Shimomura, Yoshiyuki Suzuki, Daisuke Ebi