Patents by Inventor Maki Hamada

Maki Hamada has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Silicon carbide semiconductor device having gate electrode
    Patent number: 10014258
    Abstract: The gate electrode is provided on the gate insulating film. The interlayer insulating film is provided to cover the gate electrode. The interlayer insulating film includes a first insulating film which is in contact with the gate electrode, contains silicon atoms, and contains neither phosphorus atoms nor boron atoms, a second insulating film which is provided on the first insulating film and contains silicon atoms and at least one of phosphorus atoms and boron atoms, and a third insulating film which contains silicon atoms and contains neither phosphorus atoms nor boron atoms. The second insulating film has a first surface which is in contact with the first insulating film, a second surface opposite to the first surface, and a third surface which connects the first surface and the second surface. The third insulating film is in contact with at least one of the second surface and the third surface.
    Type: Grant
    Filed: August 31, 2015
    Date of Patent: July 3, 2018
    Assignees: Sumitomo Electric Industries, Ltd., Renesas Electronics Corporation
    Inventors: Shunsuke Yamada, So Tanaka, Daisuke Hamajima, Shinji Kimura, Masayuki Kobayashi, Masaki Kijima, Maki Hamada
  • SILICON CARBIDE SEMICONDUCTOR DEVICE
    Publication number: 20170309574
    Abstract: The gate electrode is provided on the gate insulating film. The interlayer insulating film is provided to cover the gate electrode. The interlayer insulating film includes a first insulating film which is in contact with the gate electrode, contains silicon atoms, and contains neither phosphorus atoms nor boron atoms, a second insulating film which is provided on the first insulating film and contains silicon atoms and at least one of phosphorus atoms and boron atoms, and a third insulating film which contains silicon atoms and contains neither phosphorus atoms nor boron atoms. The second insulating film has a first surface which is in contact with the first insulating film, a second surface opposite to the first surface, and a third surface which connects the first surface and the second surface. The third insulating film is in contact with at least one of the second surface and the third surface.
    Type: Application
    Filed: August 31, 2015
    Publication date: October 26, 2017
    Inventors: Shunsuke Yamada, So Tanaka, Daisuke Hamajima, Shinji Kimura, Masayuki Kobayashi, Masaki Kijima, Maki Hamada