Abstract: In the solid-state imaging device of the present invention having a photoelectric conversion section and a charge transfer section equipped with a charge transfer electrode for transferring an electric charge generated in the photoelectric conversion section, the charge transfer electrode has an alternate arrangement of a first layer electrode comprising a first layer electrically conducting film and a second layer electrode comprising a second layer electrically conducting film, which are formed on a gate oxide film comprising a laminate film consisting of a silicon oxide film and a metal oxide thin film, and the first layer electrode and the second layer electrode are separated by insulation with an interelectrode insulating film comprising a sidewall insulating film formed by a CVD process to cover the lateral wall of the first layer electrode.

Abstract: A solid image pick-up element comprises: a photoelectric converting portion; a charge transmitting portion comprising a charge transmitting electrode that transmits a charge generated by the photoelectric converting portion; and a peripheral circuit portion connected to the charge transmitting portion, wherein a surface level of a field oxide film provided at the peripheral circuit portion and the charge transmitting portion to surround an effective image pick-up region of the photoelectric converting portion is to a degree the same as a surface level of the photoelectric converting portion.

Abstract: In the solid-state imaging device of the present invention having a photoelectric conversion section and a charge transfer section equipped with a charge transfer electrode for transferring an electric charge generated in the photoelectric conversion section, the charge transfer electrode has an alternate arrangement of a first layer electrode comprising a first layer electrically conducting film and a second layer electrode comprising a second layer electrically conducting film, which are formed on a gate oxide film comprising a laminate film consisting of a silicon oxide film and a metal oxide thin film, and the first layer electrode and the second layer electrode are separated by insulation with an interelectrode insulating film comprising a sidewall insulating film formed by a CVD process to cover the lateral wall of the first layer electrode.

Abstract: A solid image pick-up element comprises: a photoelectric converting portion; a charge transmitting portion comprising a charge transmitting electrode that transmits a charge generated by the photoelectric converting portion; and a peripheral circuit portion connected to the charge transmitting portion, wherein a surface level of a field oxide film provided at the peripheral circuit portion and the charge transmitting portion to surround an effective image pick-up region of the photoelectric converting portion is to a degree the same as a surface level of the photoelectric converting portion.

Abstract: In the solid-state imaging device of the present invention having a photoelectric conversion section and a charge transfer section equipped with a charge transfer electrode for transferring an electric charge generated in the photoelectric conversion section, the charge transfer electrode has an alternate arrangement of a first layer electrode including a first layer electrically conducting film and a second layer electrode including a second layer electrically conducting film, which are formed on a gate oxide film including a laminate film consisting of a silicon oxide film and a metal oxide thin film, and the first layer electrode and the second layer electrode are separated by insulation with an interelectrode insulating film including a sidewall insulating film formed by a CVD process to cover the lateral wall of the first layer electrode.

Abstract: In the solid-state imaging device of the present invention having a photoelectric conversion section and a charge transfer section equipped with a charge transfer electrode for transferring an electric charge generated in the photoelectric conversion section, the charge transfer electrode has an alternate arrangement of a first layer electrode comprising a first conductive film and a second layer electrode comprising a second conductive film, and the first layer electrode and the second layer electrode are separated by insulation with an interelectrode insulating film having a two-layer structure comprising a sidewall insulating film consisting of a first insulating layer formed by a CVD method to cover the lateral wall of the first layer electrode and a second insulating film.

Abstract: In the solid-state imaging device of the present invention having a photoelectric conversion section and a charge transfer section equipped with a charge transfer electrode for transferring an electric charge generated in the photoelectric conversion section, the charge transfer electrode has an alternate arrangement of a first layer electrode comprising a first layer electrically conducting film and a second layer electrode comprising a second layer electrically conducting film, which are formed on a gate oxide film comprising a laminate film consisting of a silicon oxide film and a metal oxide thin film, and the first layer electrode and the second layer electrode are separated by insulation with an interelectrode insulating film comprising a sidewall insulating film formed by a CVD process to cover the lateral wall of the first layer electrode.

Abstract: A release sheet comprising a release substrate and a release layer which comprises cross-linked polyolefin, is formed at least one side of said release substrate, and has from 10 to 300 mN/cm of release force to an adhesive layer formed from a 2 packs type acryl-based adhesive agent. The said release sheet has an excellent heat resistance, solvent resistance, adhesion between a release layer and a release substrate and capability of direct transfer coating of an adhesive layer on a release layer.

Abstract: On a wafer coated with photosensitizing agent, plural shots of exposure are applied through a mask including a plurality of reticles each of which has a circuit pattern and a top surface identification information, while the mask and the wafer are relatively moved. Then the wafer is developed and etched to form convex or concave reticle numbers (top surface identification information) on a metal layer which is the uppermost part or a part close to the uppermost part of the wafer. The reticle numbers enables to distinguish each of reticles on the mask. Next, an under surface identification information is recorded on an under surface of the wafer by laser marking or another method. The under surface identification information enables to distinguish each of the shots of exposure.

Abstract: A release agent comprising (A) an olefin-based elastomer having a density of not less than 0.855 g/cc and less than 0.868 g/cc, and (B) an ethylene-?-olefin copolymer having a density of from 0.868 g/cc to 0.970 g/cc as main components, wherein the difference in average density between the components (A) and (B) is not less than 0.005 g/cc and the mixing weight ratio of the component (A) to the component (B) is from 90:10 to 10:90. Such a release agent contains no silicone-based components generating undesired gasses, can exhibit not only a good releasability to various adhesives but also a less fluctuation in peeling force, and can maintain a low peeling force even when the release agent is bonded to an adhesive and preserved under a heating condition.

Abstract: A simulation system predicts a behavior of a molten resin in a mold in filling, packing, and cooling processes by using a fundamental equation formulated by the finite element method, and shrinkage factors in a direction of thickness and planar directions based on anisotropy of a volume shrinkage factor obtained during prediction of the filling, packing, and cooling processes, so that a warp deformation in an injection-molded article can be predicted at a higher precision. In this simulation system, the warp deformation is predicted by calculating the shrinkage factors in accordance with:.epsilon.Z=A+B.multidot.eV (1).epsilon.P=(eV-.epsilon.Z)/2 (2)wherein .epsilon.Z is a shrinkage factor in the direction of thickness, .epsilon.P is a shrinkage factor in the planar directions, eV is a volume shrinkage factor, and A and B are shrinkage coefficients.

Abstract: A simulation system predicts a behavior of a molten resin in a mold in filling, packing, and cooling processes by using a fundamental equation formulated by the finite element method, and shrinkage factors in a direction of thickness and planar directions based on anisotropy of a volume shrinkage factor obtained during prediction of the filling, packing, and cooling processes, so that a warp deformation in an injection-molded article can be predicted at a higher precision. In this simulation system, the warp deformation is predicted by calculating the shrinkage factors in accordance with:.epsilon.Z=A+B.multidot.eV (1).epsilon.P=(eV-.epsilon.Z)/2 (2)wherein .epsilon.Z is a shrinkage factor in the direction of thickness, .epsilon.P is a shrinkage factor in the planar directions, eV is a volume shrinkage factor, and A and B are shrinkage coefficients.

Abstract: Disclosed is a motor having a rotor driven by a vibrator generating a vibration of rope skipping motion. The rotor has a friction portion which is in contact with the friction portion of the vibrator so as to be given the vibration of rope skipping motion by the friction portion of the vibrator, and a supporting portion which is provided at a position spaced apart from the friction portion and which is in contact with a portion of the vibrator. Thus, the motor is constructed compactly.

Abstract: Disclosed is a motor having a rotor driven by a vibrator generating a vibration of rope skipping motion. The rotor has a friction portion which is in contact with the friction portion of the vibrator so as to be given the vibration of rope skipping motion by the friction portion of the vibrator, and a supporting portion which is provided at a position spaced apart from the friction portion and which is in contact with a portion of the vibrator. Thus, the motor is constructed compactly.