Abstract: An NTC thermistor element includes a thermistor body and a plurality of internal electrodes disposed in the thermistor body and opposing each other. The thermistor body includes a region interposed between adjacent internal electrodes of the plurality of internal electrodes. The region of the thermistor body includes a plurality of crystal grains arranged in succession between the internal electrodes adjacent to each other. The plurality of crystal grains include a first crystal grain, a second crystal grain, and a third crystal grain. The first crystal grain is in contact with one internal electrode of the internal electrodes adjacent to each other. The second crystal grain is in contact with another internal electrode of the internal electrodes adjacent to each other. The third crystal grain is not in contact with the first crystal grain and the second crystal grain.

Abstract: An NTC thermistor element includes a thermistor body and a plurality of internal electrodes disposed in the thermistor body and opposing each other. The thermistor body includes a region interposed between adjacent internal electrodes of the plurality of internal electrodes. The region of the thermistor body includes a plurality of crystal grains arranged in succession between the internal electrodes adjacent to each other. The plurality of crystal grains include a first crystal grain, a second crystal grain, and a third crystal grain. The first crystal grain is in contact with one internal electrode of the internal electrodes adjacent to each other. The second crystal grain is in contact with another internal electrode of the internal electrodes adjacent to each other. The third crystal grain is not in contact with the first crystal grain and the second crystal grain.

Abstract: The multilayer chip varistor of the present invention includes a varistor body including a plurality of varistor layers and inner electrodes arranged to sandwich each of the varistor layers, terminal electrodes formed on each ends of the varistor body and connected to the inner electrodes, and glass layers formed between the varistor body and the terminal electrodes. In addition, a plated layers and are formed on the surface of the terminal electrodes.

Abstract: The multilayer chip varistor of the present invention includes a varistor body including a plurality of varistor layers and inner electrodes arranged to sandwich each of the varistor layers, terminal electrodes formed on each ends of the varistor body and connected to the inner electrodes, and glass layers formed between the varistor body and the terminal electrodes. In addition, a plated layers and are formed on the surface of the terminal electrodes.

Abstract: A laminated chip type varistor comprising a varistor function layer, internal electrodes, and terminal electrodes. The varistor function layer has a composition containing zinc oxide as a main component, and cobalt oxide and rare earth elements as additives. The internal electrodes contain at least one selected from the group consisting of aluminum in the form of Al2O3 with an amount of from 0.0001 to 5.0% by weight, iron in the form of Fe2O3 with an amount of from 0.0001 to 5.0% by weight, and zirconia in the form of ZrO2 with an amount of from 0.001 to 6.0% by weight as additives with respect to an electrically conductive metal component of a composition for forming layers of the internal electrodes.