Abstract: Copper material is exposed on the surface of a TiN film (an underlying film) formed in the main surface of a silicon substrate with a silicon oxide film interposed. Subsequently, a thin copper film is formed on TiN film. Thus, the thin copper film can be formed on the film including metal with high melting point or nitride thereof with high adhesion by means of CVD.

Abstract: Copper material is exposed on the surface of a TiN film (an underlying film) formed in the main surface of a silicon substrate with a silicon oxide film interposed. Subsequently, a thin copper film is formed on TiN film. Thus, the thin copper film can be formed on the film including metal with high melting point or nitride thereof with high adhesion by means of CVD.

Abstract: A method of preparing a multilevel embedded wiring system for an IC comprising a first wiring formation step, a first connecting portion formation step, and a second wiring formation step, wherein the first wiring formation step comprises forming a first trench for a first embedded wiring in a first insulating layer disposed on a substrate and embedding in the first trench, in turn, a first conductive layer and a first conductive capping layer; the first connecting portion formation step comprises forming a second insulating layer on the first insulating layer and the first conductive capping layer, forming a via-hole in a part of the second insulating layer at the first conductive capping layer, and embedding a conductive connecting portion in the via-hole and connected to the first conductive layer; and the second formation step comprises forming a third insulating layer on the second insulating layer and the conductive connecting portion, forming a second trench for a second wiring in the third insulating

Abstract: A Cu interconnection layer is formed in a trench provided in an insulating layer with a base layer interposed therebetween, an adhesion layer is formed on the Cu interconnection layer and a cap layer is formed on the adhesion layer to restrict exfoliation of the cap layer formed on the Cu interconnection layer buried in the trench formed in the insulating layer.

Abstract: In a CVD apparatus for Cu formation using as a raw material, a mixture of a solvent and a liquid raw material including Cu(HFA) and adducted molecules or a solid raw material including Cu(HFA) and adducted molecules, a fluorinated organic polymer contained, a fluorinated metal, an insulator or a Ti compound is provided on a surface of a member at a portion where the raw material exists.

Abstract: To form a plurality of patterned conductor leads in the same layer of an integrated circuit, an insulating film is etched to form a plurality of patterned grooves by plasma etching using an etching gas containing carbon and fluorine to which an additive gas containing carbon is added. The etching rate is substantially proportional to the groove width, so that the groove depth is substantially proportional to the groove width. Grooves are filled with a conductive material to form patterned conductor leads. Thus, an aspect ratio of the patterned conductor leads is kept in a certain range, resulting in an improvement in yield and reliability of the conductor leads. The conductor leads formed of material containing copper are coated with a diffusion preventive film.

Abstract: The multilevel embedded wiring system for an IC has a capping layer on the conductive layer in channels or trenches in insulating layers. The capping layer prevents halation of light in a lithography process, resulting in a high precision structure. Even if Cu is used as the conductive material, the resulting wiring resistivity is still low and the diffusion and oxidation of Cu are prevented.