Abstract: A method for fabricating a semiconductor device according to the present invention includes: a step for forming a wiring layer on a semiconductor substrate; a step for patterning the wiring layer; and a step for covering the wiring layer with a protective insulating film. Moreover, after the step for forming the wiring layer, all required heat treatment steps to be performed prior to the step for covering the wiring layer with the protective insulating film are performed at a temperature lower than a temperature for plastic deformation of the wiring layer.

Abstract: A method of manufacturing a semiconductor device, includes the steps of: raising a temperature of a sapphire substrate which is included in the semiconductor device from a room temperature to a preheat temperature of 150° C. to 450° C. and keeping the preheat temperature for a first predetermined time, thereby preheating the semiconductor device; and subsequently raising a temperature of the sapphire substrate from the preheat temperature to a thermal reaction temperature of 500° C. or higher and keeping the thermal reaction temperature for a second predetermined time, thereby performing a thermal reaction treatment of the semiconductor device.

Abstract: A method for fabricating a semiconductor device according to the present invention includes: a step for forming a wiring layer on a semiconductor substrate; a step for patterning the wiring layer; and a step for covering the wiring layer with a protective insulating film. Moreover, after the step for forming the wiring layer, all required heat treatment steps to be performed prior to the step for covering the wiring layer with the protective insulating film are performed at a temperature lower than a temperature for plastic deformation of the wiring layer.

Abstract: A method of manufacturing a semiconductor device, includes the steps of: raising a temperature of a sapphire substrate which is included in the semiconductor device from a room temperature to a preheat temperature of 150° C. to 450° C. and keeping the preheat temperature for a first predetermined time, thereby preheating the semiconductor device; and subsequently raising a temperature of the sapphire substrate from the preheat temperature to a thermal reaction temperature of 500° C. or higher and keeping the thermal reaction temperature for a second predetermined time, thereby performing a thermal reaction treatment of the semiconductor device.