Patents by Inventor Makiko Miyachi

Makiko Miyachi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Field effect transistor, method of producing the same, and method of producing laminated member
    Patent number: 8021915
    Abstract: There is provided a field effect transistor having an organic semiconductor layer, including: an organic semiconductor layer containing at least porphyrin; and a layer composed of at least a polysiloxane compound, the layer being laminated on the organic semiconductor layer so as to be in intimate contact with the organic semiconductor layer. As a result, there can be provided a field effect transistor which enables an organic semiconductor layer having high crystallinity and high orientation to be formed and which exhibits a high mobility.
    Type: Grant
    Filed: January 15, 2009
    Date of Patent: September 20, 2011
    Assignee: Canon Kabushiki Kaisha
    Inventors: Daisuke Miura, Tomonari Nakayama, Toshinobu Ohnishi, Makoto Kubota, Akane Masumoto, Hidetoshi Tsuzuki, Makiko Miyachi
  • FIELD EFFECT TRANSISTOR, METHOD OF PRODUCING THE SAME, AND METHOD OF PRODUCING LAMINATED MEMBER
    Publication number: 20090124040
    Abstract: There is provided a field effect transistor having an organic semiconductor layer, including: an organic semiconductor layer containing at least porphyrin; and a layer composed of at least a polysiloxane compound, the layer being laminated on the organic semiconductor layer so as to be in intimate contact with the organic semiconductor layer. As a result, there can be provided a field effect transistor which enables an organic semiconductor layer having high crystallinity and high orientation to be formed and which exhibits a high mobility.
    Type: Application
    Filed: January 15, 2009
    Publication date: May 14, 2009
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Daisuke Miura, Tomonari Nakayama, Toshinobu Ohnishi, Makoto Kubota, Akane Masumoto, Hidetoshi Tsuzuki, Makiko Miyachi
  • Field effect transistor, method of producing the same, and method of producing laminated member
    Patent number: 7491967
    Abstract: There is provided a field effect transistor having an organic semiconductor layer, including: an organic semiconductor layer containing at least porphyrin; and a layer composed of at least a polysiloxane compound, the layer being laminated on the organic semiconductor layer so as to be in intimate contact with the organic semiconductor layer. As a result, there can be provided a field effect transistor which enables an organic semiconductor layer having high crystallinity and high orientation to be formed and which exhibits a high mobility.
    Type: Grant
    Filed: March 9, 2005
    Date of Patent: February 17, 2009
    Assignee: Canon Kabushiki Kaisha
    Inventors: Daisuke Miura, Tomonari Nakayama, Toshinobu Ohnishi, Makoto Kubota, Akane Masumoto, Hidetoshi Tsuzuki, Makiko Miyachi
  • Field effect transistor, method of producing the same, and method of producing laminated member
    Publication number: 20070012914
    Abstract: There is provided a field effect transistor having an organic semiconductor layer, including: an organic semiconductor layer containing at least porphyrin; and a layer composed of at least a polysiloxane compound, the layer being laminated on the organic semiconductor layer so as to be in intimate contact with the organic semiconductor layer. As a result, there can be provided a field effect transistor which enables an organic semiconductor layer having high crystallinity and high orientation to be formed and which exhibits a high mobility.
    Type: Application
    Filed: March 9, 2005
    Publication date: January 18, 2007
    Applicant: Canon Kabushiki Kaisha
    Inventors: Daisuke Miura, Tomonari Nakayama, Toshinobu Ohnishi, Makoto Kubota, Akane Masumoto, Hidetoshi Tsuzuki, Makiko Miyachi