Patents by Inventor Makio Horikawa

Makio Horikawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6900071
    Abstract: A substrate is provided with a substrate main body made from silicon, and an oxide film for a base formed thereon. The oxide film includes a first oxide film made mainly of a thermal SiO2 film formed by thermally oxidizing silicon in the substrate main body, and a second oxide film made of a high-temperature oxide film deposited and formed thereon. Alternatively the second oxide film may be formed by TEOS.
    Type: Grant
    Filed: July 26, 2001
    Date of Patent: May 31, 2005
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Mika Okumura, Makio Horikawa, Kiyoshi Ishibashi
  • Patent number: 6812568
    Abstract: A manufacturing method of an electrode structure and a thin-film structural body, which can remove a sacrifice film without removing other insulating films. An anchor hole which provides an opening to the surface of a wiring is covered with a sacrifice film and a nitride film. The anchor hole is constituted by a hole section formed in the nitride film and an opening of the sacrifice film. The hole section is opened to enter the wiring inward from an edge of the surface of the wiring by a first predetermined distance. The opening is opened to retreat from the hole section by a second predetermined distance. The existence of the first and second predetermined distances makes it possible to lengthen the entering distance to the oxide film of etchant to be used for removing the sacrifice film.
    Type: Grant
    Filed: March 28, 2003
    Date of Patent: November 2, 2004
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Makio Horikawa, Kiyoshi Ishibashi, Mika Okumura
  • Patent number: 6784011
    Abstract: The present invention relates to a manufacturing method of a thin-film structural body which is formed by using a semiconductor processing technique, and an object thereof is to provide a manufacturing method of a thin-film structural body, capable of reducing a stress difference exerted between a sacrifice film and a substrate upon thermal shrinkage. In order to achieve this object, a sacrifice film (51), which is formed on a substrate (1), is formed by using a PSG film in which the concentration of phosphorus is set to a value which is greater than 3 mol %, and also smaller than 4 mol %. After a thin-film layer (53) has been formed thereon and after the thin-film layer (53) has been patterned, the sacrifice film (51) is removed by an etching process.
    Type: Grant
    Filed: March 20, 2003
    Date of Patent: August 31, 2004
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Mika Okumura, Makio Horikawa, Kiyoshi Ishibashi, Takefumi Nishigami
  • Publication number: 20040020897
    Abstract: A main object of the present invention is to provide a manufacturing method of a thin-film structural body removing a sacrifice film without removing other insulating films.
    Type: Application
    Filed: April 1, 2003
    Publication date: February 5, 2004
    Inventors: Mika Okumura, Makio Horikawa, Kiyoshi Ishibashi
  • Publication number: 20040021186
    Abstract: The present invention relates to a substrate and a manufacturing method thereof as well as a thin-film structural body, and an object thereof is to provide a substrate capable of reducing a stress difference generating between an oxide film on the substrate and another film formed on the oxide film upon thermal shrinkage and also shortening the time required for film formation at the time of forming a thick oxide film, and a manufacturing method thereof as well as a thin-film structural body.
    Type: Application
    Filed: March 25, 2003
    Publication date: February 5, 2004
    Inventors: Mika Okumura, Makio Horikawa, Kiyoshi Ishibashi
  • Publication number: 20030190817
    Abstract: A main object of the present invention is to provide a manufacturing method of an electrode structure and a thin-film structural body, which can remove a sacrifice film without removing other insulating films.
    Type: Application
    Filed: March 28, 2003
    Publication date: October 9, 2003
    Inventors: Makio Horikawa, Kiyoshi Ishibashi, Mika Okumura
  • Publication number: 20030186480
    Abstract: The present invention relates to a manufacturing method of a thin-film structural body which is formed by using a semiconductor processing technique, and an object thereof is to provide a manufacturing method of a thin-film structural body, capable of reducing a stress difference exerted between a sacrifice film and a substrate upon thermal shrinkage.
    Type: Application
    Filed: March 20, 2003
    Publication date: October 2, 2003
    Inventors: Mika Okumura, Makio Horikawa, Kiyoshi Ishibashi, Takefumi Nishigami
  • Publication number: 20030180981
    Abstract: The present invention relates to a thin-film structural body formed by using a semiconductor processing technique and a manufacturing method thereof, and particularly in a thin-film structural body constituting a semiconductor acceleration sensor and a manufacturing method thereof, an object of the present invention is to provide a thin-film structural body which allows the thin-film member to be easily stress-controlled, and easily makes the film-thickness of the thin-film member thicker, and a manufacturing method thereof.
    Type: Application
    Filed: February 13, 2003
    Publication date: September 25, 2003
    Inventors: Kiyoshi Ishibashi, Makio Horikawa, Mika Okumura, Masaaki Aoto, Daisuku Yoshida, Hirofumi Takakura
  • Publication number: 20030176008
    Abstract: An object of the present invention is to provide a manufacturing method of a thin-film structural body, capable of preparing a thin-film structural body by using a sacrifice film without any protruding part on its surface, thereby preparing a thin-film structural body having high strength and reliability.
    Type: Application
    Filed: February 21, 2003
    Publication date: September 18, 2003
    Inventors: Mika Okumura, Makio Horikawa, Kiyoshi Ishibashi
  • Publication number: 20030155622
    Abstract: An object of the present invention is to provide an acceleration sensor which is inexpensive and accomplishes its small-size and light-weight structure, and a manufacturing method thereof.
    Type: Application
    Filed: February 21, 2003
    Publication date: August 21, 2003
    Inventors: Kiyoshi Ishibashi, Makio Horikawa, Mika Okumura