Abstract: The object of the present invention is to provide a wafer having a structure of enabling an SiC wafer to be put to practical use as a wafer for monitoring a film thickness. For this purpose, an average surface roughness Ra of at least one surface of the SiC wafer is set to be substantially equivalent to a film thickness of a film to be deposited on an Si wafer to be measured. If several types are available to be deposited on an Si wafer to be measured, a minimum film thickness of the film among the several types is determined as an upper limit value, and the average surface roughness Ra of the film thickness measuring SiC wafer is set less than the upper limit value. More concretely, the surface roughness is set to be about 400 times as large as the average surface roughness of a product Si wafer, Ra being preferably set to be 0.08 ?m or less.

Abstract: The object of the present invention is to provide a wafer having a structure of enabling an SiC wafer to be put to practical use as a wafer for monitoring a film thickness. For this purpose, an average surface roughness Ra of at least one surface of the SiC wafer is set to be substantially equivalent to a film thickness of a film to be deposited on an Si wafer to be measured. If several types are available to be deposited on an Si wafer to be measured, a minimum film thickness of the film among the several types is determined as an upper limit value, and the average surface roughness Ra of the film thickness measuring SiC wafer is set less than the upper limit value. More concretely, the surface roughness is set to be about 400 times as large as the average surface roughness of a product Si wafer, Ra being preferably set to be 0.08 &mgr;m or less.

Abstract: An iron base alloy is disclosed which consists essentially of 0.005%-7.0% of aluminum, 0.005-7.0% of silicon, 0.0001%-0.005% of magnesium, 0.0001-0.005% of calcium, 0.001%-0.002% of oxygen, 0.0001-0.002% of sulphur, and 0.0005%-0.003% of nitrogen, less than 2% of carbon, minor amounts of phosphorous and manganese and the remainder iron.

Abstract: A discharge electrode for a charger has a thin wire or core made of stainless steel or electrolytically polished tungsten, and a coating provided on the thin line. To form the coating, amorphous alloy containing tantalum, niobium, zirconium, titanium or similar element belonging to the same group on the periodic table is deposited on the thin wire by sputtering, CVD (Chemical Vapor Deposition) or similar technology. The content of tantalum in the amorphous alloy is selected to be 10 at % to 70 at %.

Abstract: A method of producing an alloy containing at least one major ingredient selected from the group consisting of iron (Fe), cobalt (Co), and Nickel (Ni) and having low contents of sulphur, oxygen, and nitrogen, comprises steps of:(a) holding a molten alloy in a container selected from the group consisting of a lime crucible, a lime crucible furnace, a converter and a ladle lined with a basic refractory consisting of 15-85% of calcium oxide (CaO), and 15-75% of magnesium oxide (MgO), wherein said alloy consists essentially of at least one major ingredient selected from the group consisting of iron (Fe), nickel (Ni), and cobalt (Co);(b) adding at least one additive, based on the molten alloy, into said molten alloy in an atmosphere selected from the group consisting of a non-oxidizing atmosphere and a vacuum, wherein said additive is selected from the group consisting of aluminum (Al), aluminum alloys, silicon and silicon alloys;(c) desulphurizing, deoxidizing and denitrifying said molten alloy under an atmosphere

Abstract: A soldering iron tip comprises a coating layer of amorphous metal satisfactory in wettability in molten solder formed on the leading end part thereof. A soldering iron tip may comprise a coating layer of amorphous metal low in wettability in molten solder formed on at least the leading end part thereof and a coating layer of material excellent in wettability in molten solder formed on the coating layer of amorphous metal on the leading end part.

Abstract: A method of producing an alloy containing at least one major ingredient selected from the group consisting of iron (Fe), cobalt (Co), and Nickel (Ni) and having low contents of sulphur, oxygen, and nitrogen, comprises steps of:(a) holding a molten alloy in a container selected from the group consisting of a lime crucible, a lime crucible furnace, a converter and a ladle lined with a basic refractory consisting of 15-85% of calcium oxide (CaO), and 15-75% of magnesium oxide (MgO), wherein said alloy consists essentially of at least one major ingredient selected from the group consisting of iron (Fe), nickel (Ni), and cobalt (Co);(b) adding at least one additive, based on the molten alloy, into said molten alloy in an atmosphere selected from the group consisting of a non-oxidizing atmosphere and a vacuum, wherein said additive is selected from the group consisting of aluminum (Al), aluminum alloys, silicon and silicon alloys;(c) desulphurizing, deoxidizing and denitrifying said molten alloy under an atmosphere

Abstract: A method of producing an alloy containing at least one major ingredient selected from the group consisting of iron (Fe), cobalt (Co), and Nickel (Ni) and having low contents of sulphur, oxygen, and nitrogen, comprises steps of:(a) holding a molten alloy in a container selected from the group consisting of a lime crucible, a lime crucible furnace, a converter and a ladle lined with a basic refractory consisting of 15-85% of calcium oxide (CaO), and 15-75% of magnesium oxide (MgO), wherein said alloy consists essentially of at least one major ingredient selected from the group consisting of iron (Fe), nickel (Ni), and cobalt (Co);(b) adding at least one additive, based on the molten alloy, into said molten alloy in an atmosphere selected from the group consisting of a non-oxidizing atmosphere and a vacuum, wherein said additive is selected from the group consisting of aluminum (Al), aluminum alloys, silicon and silicon alloys;(c) desulphurizing, deoxidizing and denitrifying said molten alloy under an atmosphere

Abstract: Ti or a high-Ti alloy is melted in a container composed of high-purity CaO materials on its inner sides. The materials are composed of not less than 99% by weight of CaO, not more than 0.1% by weight of SiO.sub.2, not more than 0.02% by weight of Fe.sub.2 O.sub.3, and not more than 0.5% by weight in total of other metal oxides under a non-oxidizing atmosphere.CaO refractories for use in the melting of Ti or a high-Ti alloy contains not less than 99% by weight of CaO, not more than 0.1% by weight of SiO.sub.2, 0.02% by weight of Fe.sub.2 O.sub.3, and not more than 0.5% by weight of other metal oxides.