Abstract: Solder bumps are formed on a plurality of electrode parts of a printed substrate and a semiconductor chip is loaded on the printed substrate via the plurality of solder bumps. In this case, a thermoplastic film is prepared as an underfill that covers a surface of the printed substrate on which the solder bumps are formed. In the film, parts corresponding to the solder bumps are removed and a peripheral edge of a part on which the semiconductor chip will be loaded has a protruded form. After the printed substrate has been covered with the film, the film is bonded onto the board and the semiconductor chip is loaded on the printed substrate and carried into a reflow furnace. In the reflow furnace, heat and pressure are applied to fuse the solder bumps.

Abstract: In a printing system in which a roll film is rolled out to be printed by a printer and the film is rolled up after printing and drying, there is a possibility that wrinkles of the film are generated when printing, and printed materials are scratched because the printed film is positioned near the printer. Both end side of a suction stage in the film delivery direction are formed in a circular arc shape, and auxiliary stages are provided near the end portions to suck and hold a film, the auxiliary stages are allowed to be moved lower than a surface of the suction stage in the state to closely attach the film to the suction stage while applying tension to the film, and the film is sucked and held on the suction stage in the state to be printed after position adjustment to a surface of a mask.

Abstract: Solder bumps are formed on a plurality of electrode parts of a printed substrate and a semiconductor chip is loaded on the printed substrate via the plurality of solder bumps. In this case, a thermoplastic film is prepared as an underfill that covers a surface of the printed substrate on which the solder bumps are formed. In the film, parts corresponding to the solder bumps are removed and a peripheral edge of a part on which the semiconductor chip will be loaded has a protruded form. After the printed substrate has been covered with the film, the film is bonded onto the board and the semiconductor chip is loaded on the printed substrate and carried into a reflow furnace. In the reflow furnace, heat and pressure are applied to fuse the solder bumps.

Abstract: In a printing system in which a roll film is rolled out to be printed by a printer and the film is rolled up after printing and drying, there is a possibility that wrinkles of the film are generated when printing, and printed materials are scratched because the printed film is positioned near the printer. Both end sides of a suction stage in the film delivery direction are formed in a circular arc shape, and auxiliary stages are provided near the end portions to suck and hold a film, the auxiliary stages are allowed to be moved lower than a surface of the suction stage in the state to closely attach the film to the suction stage while applying tension to the film, and the film is sucked and held on the suction stage in the state to be printed after position adjustment to a surface of a mask.

Abstract: A screen printing apparatus 199, 169 has a roll paper vibrating device which vibrates roll paper in contact with the lower surface of a screen mask in a direction perpendicular to a moving direction of the roll paper while the roll paper is being moved in contact with the lower surface of the screen mask. Thereby, the roll paper in contact with the lower surface of the screen mask is moved in a waveform-shape pattern. Therefore, the cumulative contact area of the roll paper on the lower surface of the mask is increased, and it is possible to efficiently remove residue, such as paste attached onto the lower surface of the screen mask of the printing apparatus and paste attached inside pattern openings of the screen mask, to maintain a good printing performance.

Abstract: To achieve higher packaging density and one wafer level for a full-sized wafer memory, or wafer-scale integration memory system, the wafers are vertically stacked with each other at a predetermined interval. A packaging technique is improved in such a way that a memory system layout can be precisely realized and a precise through hole can be formed. Moreover, other chips are fixed on the wafer so as to achieve furthermore the high packaging density.

Abstract: To achieve higher packaging density and one wafer level for a full-sized wafer memory, or wafer-scale integration memory system, the wafers are vertically stacked with each other at a predetermined interval. A packaging technique is improved in such a way that a memory system layout can be precisely realized and a precise through hole can be formed. Moreover, other chips are fixed on the wafer so as to achieve furthermore the high packaging density.

Abstract: A screen printing machine comprises a conveyor for conveying a substrate to a positioning station, an XY.theta. table on which the substrate is to be put, and a printing device for printing a pattern onto the substrate in a printing station. The XY.theta. table is movable in an XY.theta. plane in the positioning station and also movable along a Z-direction perpendicular to the XY.theta. plane. The machine further comprises a device for moving the printing device between the printing station and a waiting station, an image processing device and a driving device for the XY.theta. table. The image processing device recognizes a position of the substrate and calculates the respective amount of movement of the XY.theta. table in the XY.theta. plane necessary for making the predetermined relative positional relation between the printing device and the substrate. The driving device moves the XY.theta. table, based on the amounts of movement calculated by the image processing device.

Abstract: A display device structure comprising a casing, a display panel placed in the casing, a transparent covering and vibrating plate member on the front side of the display panel and an actuator for the plate member. The covering and vibrating plate member is carried on the casing through an elastic member interposed between the peripheral portion of the plate member and the casing. By this arrangement the plate member is capable of effectively generating sound outward upon reception of vibrating force from the actuator.

Abstract: An FM detector is constructed of a phase shift network and an analog multiplier. The analog multiplier includes a differential amplifier circuit and a phase detector circuit. The differential amplifier circuit includes differential pair transistors which are driven by FM intermediate frequency signals. One of the differential pair transistors has another transistor connected thereto which is also driven by the FM intermediate frequency signal. A collector signal of either one of the differential pair transistors is applied to the phase detector circuit through the phase shift network, while a collector signal of the other transistor is directly applied to the phase detector circuit. An emitter of the one transistor and an emitter of the other transistor are connected through resistors, whereby the signal-to-noise ratio of the FM detector is improved.

Abstract: An input signal is applied to a first limiting amplifier circuit, and an output of the first limiting amplifier circuit is applied to a second limiting amplifier circuit. An output of the second limiting amplifier circuit is applied to a third limiting amplifier circuit. The output signal of the first limiting amplifier circuit is applied to a first detector circuit, the output signal of the second limiting amplifier circuit is applied to a second detector circuit, and the output signal of the third limiting amplifier circuit is applied to a third detector circuit. Bias means for stipulating the bias states of the first, second and third detector circuits are coupled to the third detector circuit. An output signal of the third detector circuit is applied to the second detector circuit as a bias signal, and an output signal of the second detector circuit is applied to the first detector circuit as a bias signal.

Abstract: An FM detector is constructed of a phase shift network and an analog multiplier. The analog multiplier includes a differential amplifier circuit and a phase detector circuit. The differential amplifier circuit includes differential pair transistors which are driven by FM intermediate frequency signals. A base emitter junction of a diode-connected transistor is connected across a base and an emitter of one of the differential pair transistors. The base of the one transistor and a base of the diode-connected transistor are connected to an emitter of an emitter-follower transistor, and the FM intermediate frequency signal is applied to a base of the emitter-follower transistor. Noise which develops in the base of the differential pair transistor or the base of the diode-connected transistor is reduced by the low output impedance of the emitter-follower transistor, so that the signal-to-noise ratio of the FM detector is improved.

Abstract: A metal-insulator semiconductor (MIS) device is manufactured by initially forming, on a semiconductor substrate, an insulating film having a hole therethrough and depositing silicon on the substrate to form a first monocrystalline silicon film in the hole and a polycrystalline silicon film on the insulating film. Then, a further insulating film is formed on the first silicon film, and a second silicon film is formed on the further insulating film. The second silicon film and the further insulating film are removed, so that the monocrystalline and polycrystalline parts of the first silicon film are exposed at both sides of the remaining part of the second silicon film and the further insulating film. Finally, an impurity is diffused to form a source and a drain region in the monocrystalline silicon film and conductive layers of polycrystalline silicon are disposed contiguous to the source and drain regions.