Patents by Inventor Makoto Hosoba

Makoto Hosoba has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20090057612
    Abstract: It is an object to provide a novel phosphor which can be manufactured without using a defect formation step which is difficult to control, and a manufacturing method thereof. The phosphor has a structure including a phosphor host material and an emission excitation material which is dispersed in a marbled pattern in the phosphor host material while being in contact with it. The emission excitation material is selected from metal oxide, a semiconductor formed of an element belonging to Group 2B (Group 12) of the periodic table and an element belonging to Group 6B (Group 16) of the periodic table, or an element formed of an element belonging to Group 3B (Group 13) of the periodic table and an element belonging to Group 5B (Group 15) of the periodic table. The phosphor host material and the emission excitation material are mixed and baked with pressure to be joined.
    Type: Application
    Filed: August 12, 2008
    Publication date: March 5, 2009
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Makoto HOSOBA, Rie MATSUBARA, Yasuo NAKAMURA, Takahiro KAWAKAMI
  • Publication number: 20080237549
    Abstract: A novel phosphor material which can be manufactured without utilizing a fault formation process which is difficult to be controlled. The phosphor material has a eutectic structure formed of a base material that is a semiconductor formed of a Group 2 element and a Group 6 element, a semiconductor formed of a Group 3 element and a Group 5 element, or a ternary phosphor formed of an alkaline earth metal, a Group 3 element, and a Group 6 element, and a solid solution material including a transition metal. The phosphor material is suited for an EL element because of less variation of characteristic since defect formation process in which stress is applied externally to form a defect inside of a phosphor material is not needed.
    Type: Application
    Filed: March 24, 2008
    Publication date: October 2, 2008
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Yasuo NAKAMURA, Takahiro KAWAKAMI, Rie MATSUBARA, Makoto HOSOBA
  • Publication number: 20070181912
    Abstract: There has been a problem that difference in refractive index between an opposite substrate or a moisture barrier layer (passivation film) such as SiN provided thereover, and air is maintained large, and light extraction efficiency is low. Further, there has been a problem that peeling or cracking due to the moisture barrier layer is easily generated, which leads to deteriorate the reliability and lifetime of a light-emitting element. According to the present invention, a light-emitting element comprises a pixel electrode, an electroluminescent layer, a transparent electrode, a passivation film, a stress relieving layer, and a low refractive index layer, all of which are stacked sequentially. The stress relieving layer serves to prevent peeling of the passivation film. The low refractive index layer serves to reduce reflectivity of light generated in the electroluminescent layer in emitting to air.
    Type: Application
    Filed: April 10, 2007
    Publication date: August 9, 2007
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Hisao Ikeda, Hiroki Ohara, Makoto Hosoba, Junichiro Sakata, Shunichi Ito
  • Patent number: 7202504
    Abstract: There has been a problem that difference in refractive index between an opposite substrate or a moisture barrier layer (passivation film) such as SiN provided thereover, and air is maintained large, and light extraction efficiency is low. Further, there has been a problem that peeling or cracking due to the moisture barrier layer is easily generated, which leads to deteriorate the reliability and lifetime of a light-emitting element. According to the present invention, a light-emitting element comprises a pixel electrode, an electroluminescent layer, a transparent electrode, a passivation film, a stress relieving layer, and a low refractive index layer, all of which are stacked sequentially. The stress relieving layer serves to prevent peeling of the passivation film. The low refractive index layer serves to reduce reflectivity of light generated in the electroluminescent layer in emitting to air.
    Type: Grant
    Filed: May 18, 2005
    Date of Patent: April 10, 2007
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hisao Ikeda, Hiroki Ohara, Makoto Hosoba, Junichiro Sakata, Shunichi Ito
  • Publication number: 20050263775
    Abstract: There has been a problem that difference in refractive index between an opposite substrate or a moisture barrier layer (passivation film) such as SiN provided thereover, and air is maintained large, and light extraction efficiency is low. Further, there has been a problem that peeling or cracking due to the moisture barrier layer is easily generated, which leads to deteriorate the reliability and lifetime of a light-emitting element. According to the present invention, a light-emitting element comprises a pixel electrode, an electroluminescent layer, a transparent electrode, a passivation film, a stress relieving layer, and a low refractive index layer, all of which are stacked sequentially. The stress relieving layer serves to prevent peeling of the passivation film. The low refractive index layer serves to reduce reflectivity of light generated in the electroluminescent layer in emitting to air.
    Type: Application
    Filed: May 18, 2005
    Publication date: December 1, 2005
    Inventors: Hisao Ikeda, Hiroki Ohara, Makoto Hosoba, Junichiro Sakata, Shunichi Ito