Patents by Inventor Makoto Juhmonji

Makoto Juhmonji has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8441012
    Abstract: The present invention provides an array substrate, a method for manufacturing an array substrate, and a display device which are such that reflow failure of a resist mask does not occur readily at the time of manufacture of the array substrate, so the array substrate can be manufactured reliably. At the time of forming a TFT, third wiring 37 between source wiring 13 and the source electrode 22 of the TFT is provided with a narrow portion 38 that is formed with a narrow width by narrowing a midpoint at a portion of the wiring in planar shape, and the resist film on the source electrode 22 and a drain electrode 23 is reflowed so as to cover the surface of a channel region Q, thus forming a reflowed resist film 42. A semiconductor film 20 is etched using this as the etching mask in a state in which the area between the source and the drain is protected, thus making the semiconductor film 20 into an island shape.
    Type: Grant
    Filed: June 8, 2010
    Date of Patent: May 14, 2013
    Assignee: Sharp Kabushiki Kaisha
    Inventor: Makoto Juhmonji
  • Publication number: 20120126236
    Abstract: The present invention provides an array substrate, a method for manufacturing an array substrate, and a display device which are such that reflow failure of a resist mask does not occur readily at the time of manufacture of the array substrate, so the array substrate can be manufactured reliably. At the time of forming a TFT, third wiring 37 between source wiring 13 and the source electrode 22 of the TFT is provided with a narrow portion 38 that is formed with a narrow width by narrowing a midpoint at a portion of the wiring in planar shape, and the resist film on the source electrode 22 and a drain electrode 23 is reflowed so as to cover the surface of a channel region Q, thus forming a reflowed resist film 42. A semiconductor film 20 is etched using this as the etching mask in a state in which the area between the source and the drain is protected, thus making the semiconductor film 20 into an island shape.
    Type: Application
    Filed: June 8, 2010
    Publication date: May 24, 2012
    Applicant: SHARP KABUSHIKI KAISHA
    Inventor: Makoto Juhmonji