Patents by Inventor Makoto KAMIJO

Makoto KAMIJO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10818545
    Abstract: A first metal interconnect structure embedded in a first dielectric material layer includes a first metallic nitride liner containing a first conductive metal nitride and a first metallic fill material portion. A second metal interconnect structure embedded in a second dielectric material layer overlies the first dielectric material layer. The second metal interconnect structure includes a pillar portion having a straight sidewall and a foot portion adjoined to a bottom periphery of the pillar portion and laterally protruding from the bottom periphery of the pillar portion. The foot portion can be formed by oxidizing a top surface of the first metallic fill material portion, removing the oxidized portion after formation of a cavity through the second dielectric material layer, and depositing a second metallic nitride liner in a volume from which the oxidized portion is removed.
    Type: Grant
    Filed: June 29, 2018
    Date of Patent: October 27, 2020
    Assignee: SANDISK TECHNOLOGIES LLC
    Inventors: Seiji Shimabukuro, Makoto Kamijo, Tetsuya Kaneko
  • Publication number: 20200006131
    Abstract: A first metal interconnect structure embedded in a first dielectric material layer includes a first metallic nitride liner containing a first conductive metal nitride and a first metallic fill material portion. A second metal interconnect structure embedded in a second dielectric material layer overlies the first dielectric material layer. The second metal interconnect structure includes a pillar portion having a straight sidewall and a foot portion adjoined to a bottom periphery of the pillar portion and laterally protruding from the bottom periphery of the pillar portion. The foot portion can be formed by oxidizing a top surface of the first metallic fill material portion, removing the oxidized portion after formation of a cavity through the second dielectric material layer, and depositing a second metallic nitride liner in a volume from which the oxidized portion is removed.
    Type: Application
    Filed: June 29, 2018
    Publication date: January 2, 2020
    Inventors: Seiji Shimabukuro, Makoto Kamijo, Tetsuya Kaneko
  • Patent number: 8542998
    Abstract: The longest possible sleep time is selected while data missing is prevented in a PON system by referring to the link speeds and the queue buffer capacities of an OLT and ONUs. The OLT calculates a first sleep time candidate based on a first link speed at which the OLT communicates with an upper network and the capacity of an unused area of a first queue buffer where downstream data is held for each of the destination ONUs. Each of the ONUs calculates a second sleep time candidate based on a second link speed at which each of the ONUs communicates with a communication terminal and the capacity of an unused area of a second queue buffer where upstream data bound for the OLT is held. The smaller sleep time is determined and used to change one of the ONUs to a sleep mode.
    Type: Grant
    Filed: October 17, 2011
    Date of Patent: September 24, 2013
    Assignee: Hitachi, Ltd.
    Inventors: Makoto Kamijo, Noboru Oosawa, Satoshi Konno
  • Publication number: 20120114331
    Abstract: The longest possible sleep time is selected while data missing is prevented in a PON system by referring to the link speeds and the queue buffer capacities of an OLT and ONUs. The OLT calculates a first sleep time candidate based on a first link speed at which the OLT communicates with an upper network and the capacity of an unused area of a first queue buffer where downstream data is held for each of the destination ONUs. Each of the ONUs calculates a second sleep time candidate based on a second link speed at which each of the ONUs communicates with a communication terminal and the capacity of an unused area of a second queue buffer where upstream data bound for the OLT is held. The smaller sleep time is determined and used to change one of the ONUs to a sleep mode.
    Type: Application
    Filed: October 17, 2011
    Publication date: May 10, 2012
    Applicant: HITACHI, LTD.
    Inventors: Makoto KAMIJO, Noboru OOSAWA, Satoshi KONNO