Abstract: An object of the present invention is to provide a novel fullerene derivative usable in n-type semiconductor materials for organic thin-film solar cells and the like. The object is achieved by a fullerene derivative represented by formula (1) wherein R1 represents aryl optionally substituted with at least one substituent, R2 represents an organic group, R3 represents an organic group, with the proviso that at least one of R2 and R3 is alkyl optionally substituted with at least one substituent or alkyl ether optionally substituted with at least one substituent, R4 represents hydrogen or an organic group, and a ring A represents a fullerene ring.

Abstract: The present invention is a material having excellent performance as an n-type semiconductor material, in particular for organic thin-film solar cells. The present invention provides an n-type semiconductor consisting of a fullerene derivative having a purity of 99% or more, the fullerene derivative being represented by formula (1): wherein ring A represents C60 fullerene; R1 represents a hydrogen atom, alkyl optionally having at least one substituent, or aryl optionally having at least one substituent; and Ar represents aryl optionally substituted with at least one alkyl group.

Abstract: An object of the present invention is to provide a novel fullerene derivative usable in n-type semiconductor materials for organic thin-film solar cells and the like. The object is achieved by a fullerene derivative represented by formula (1) wherein R1 represents aryl optionally substituted with at least one substituent, R2 represents an organic group, R3 represents an organic group, with the proviso that at least one of R2 and R3 is alkyl optionally substituted with at least one substituent or alkyl ether optionally substituted with at least one substituent, R4 represents hydrogen or an organic group, and a ring A represents a fullerene ring.

Abstract: The present invention is a material having excellent performance as an n-type semiconductor material, in particular for organic thin-film solar cells. The present invention provides an n-type semiconductor consisting of a fullerene derivative having a purity of 99% or more, the fullerene derivative being represented by formula (1): wherein ring A represents C60 fullerene; R1 represents a hydrogen atom, alkyl optionally having at least one substituent, or aryl optionally having at least one substituent; and Ar represents aryl optionally substituted with at least one alkyl group.

Abstract: The present invention is a material that exhibits excellent properties as an n-type semiconductor, in particular for use in organic thin-film solar cells. The present invention relates to a fullerene derivative represented by formula (1): wherein R1a and R1b are the same or different, and each represents a hydrogen atom or a fluorine atom; R1c and R1d are the same or different, and each represents a hydrogen atom, a fluorine atom, alkyl, alkoxy, ester, or cyano; R2 represents (1) phenyl optionally substituted with at least one substituent selected from the group consisting of fluorine, alkyl, alkoxy, ester, and cyano, or (2) a 5-membered heteroaryl group optionally substituted with 1 to 3 methyl groups; and ring A represents a fullerene ring.

Abstract: A polymer according to the present invention comprises a repeating structure represented by the following formula (1), wherein L and X each independently have a configuration in which are linked a plurality of conjugation forming structures each conjugated by itself, and each have at least one thienylene structure as the conjugation forming structure: wherein each X represents a monovalent organic group that may have a substituent, each L represents a divalent organic group that may have a substituent, and each T represents a trivalent organic group that may have a substituent, with the proviso that in the formula, the X's represent the same group, the L's represent the same group, and the T's represent the same group.