Abstract: According to one embodiment, a plasma processing apparatus includes: a processing chamber; a decompression section configured to decompress inside of the processing chamber; a member including a control section to be inserted into a depression provided on mounting side of a workpiece, the control section being configured to thereby control at least one of in-plane distribution of capacitance of a region including the workpiece and in-plane distribution of temperature of the workpiece; a mounting section provided inside the processing chamber; a plasma generating section configured to supply electromagnetic energy to a region for generating a plasma for performing plasma processing on the workpiece; and a gas supply section configured to supply a process gas to the region for generating a plasma. The control section performs control so that at least one of the in-plane distribution of capacitance and the in-plane distribution of temperature is made uniform.

Abstract: According to one embodiment, a method is disclosed for manufacturing a reflective mask. The method can include forming a reflection layer on a major surface of a substrate. The method can include forming an absorption layer on the reflection layer. The method can include forming a pattern region in the absorption layer. In addition, the method can include forming a light blocking region surrounding the pattern region in the absorption layer and the reflection layer. The forming the light blocking region includes etching-processing the reflection layer using a gas containing chlorine and oxygen.

Abstract: According to one embodiment, a method is disclosed for manufacturing a reflective mask. The method can include forming a reflection layer on a major surface of a substrate. The method can include forming an absorption layer on the reflection layer. The method can include forming a pattern region in the absorption layer. In addition, the method can include forming a light blocking region surrounding the pattern region in the absorption layer and the reflection layer. The forming the light blocking region includes etching-processing the reflection layer using a gas containing chlorine and oxygen.

Abstract: According to one embodiment, a method is disclosed for manufacturing a reflective mask. The method can include forming a reflection layer on a major surface of a substrate. The method can include forming an absorption layer on the reflection layer. The method can include forming a pattern region in the absorption layer. In addition, the method can include forming a light blocking region surrounding the pattern region in the absorption layer and the reflection layer. The forming the light blocking region includes etching-processing the reflection layer using a gas containing chlorine and oxygen.

Abstract: According to one embodiment, a plasma processing apparatus includes: a processing chamber; a decompression section configured to decompress inside of the processing chamber; a member including a control section to be inserted into a depression provided on mounting side of a workpiece, the control section being configured to thereby control at least one of in-plane distribution of capacitance of a region including the workpiece and in-plane distribution of temperature of the workpiece; a mounting section provided inside the processing chamber; a plasma generating section configured to supply electromagnetic energy to a region for generating a plasma for performing plasma processing on the workpiece; and a gas supply section configured to supply a process gas to the region for generating a plasma. The control section performs control so that at least one of the in-plane distribution of capacitance and the in-plane distribution of temperature is made uniform.

Abstract: According to one embodiment, a method is disclosed for manufacturing a reflective mask. The method can include forming a reflection layer on a major surface of a substrate. The method can include forming an absorption layer on the reflection layer. The method can include forming a pattern region in the absorption layer. In addition, the method can include forming a light blocking region surrounding the pattern region in the absorption layer and the reflection layer. The forming the light blocking region includes etching-processing the reflection layer using a gas containing chlorine and oxygen.