Abstract: A water-soluble metal working oil agent which can be prevented from being scattered in the form of mists for a long period when used for the cutting processing, grinding processing and the like of metallic materials is provided. A method for producing the water-soluble metal working oil agent is described. The water-soluble metal working oil agent includes a polyalkylene oxide having a weight average molecular weight of 100,000 to 1,000,000 and water.

Abstract: A water-soluble metal working oil agent which can be prevented from being scattered in the form of mists for a long period when used for the cutting processing, grinding processing and the like of metallic materials is provided. A method for producing the water-soluble metal working oil agent is described. The water-soluble metal working oil agent includes a polyalkylene oxide having a weight average molecular weight of 100,000 to 1,000,000 and water.

Abstract: A method for producing a medium-molecular weight polyalkylene oxide having a viscosity-average molecular weight of from 100,000 to 2,500,000, including heat-treating a polyalkylene oxide having a viscosity-average molecular weight of 3,000,000 or more at a temperature of from 30° to 70° C. in an aliphatic hydrocarbon solvent having a dissolved oxygen concentration of 0.5 mg/L or more, in the presence of a radical initiator in an amount of from 0.001 to 1 part by mass, based on 100 parts by mass of the polyalkylene oxide, and thereafter adding an antioxidant to a mixture in an amount of from 0.001 to 5 parts by mass, based on 100 parts by mass of the polyalkylene oxide to remove the solvent. According to the method of the present invention, a medium-molecular weight polyalkylene oxide having a viscosity-average molecular weight of from 100,000 to 2,500,000 which has excellent storage stability can be industrially obtained without subjecting to a gamma-ray irradiation treatment.

Abstract: A method for producing a medium-molecular weight polyalkylene oxide having a viscosity-average molecular weight of from 100,000 to 2,500,000, including heat-treating a polyalkylene oxide having a viscosity-average molecular weight of 3,000,000 or more at a temperature of from 30° to 70° C. in an aliphatic hydrocarbon solvent having a dissolved oxygen concentration of 0.5 mg/L or more, in the presence of a radical initiator in an amount of from 0.001 to 1 part by mass, based on 100 parts by mass of the polyalkylene oxide, and thereafter adding an antioxidant to a mixture in an amount of from 0.001 to 5 parts by mass, based on 100 parts by mass of the polyalkylene oxide to remove the solvent. According to the method of the present invention, a medium-molecular weight polyalkylene oxide having a viscosity-average molecular weight of from 100,000 to 2,500,000 which has excellent storage stability can be industrially obtained without subjecting to a gamma-ray irradiation treatment.

Abstract: A lower face of a base body (15) includes a wave-like corrugated surface portion (19) of which cross-section in a direction perpendicular to a predetermined direction along which cleaning is performed with a cleaning device body (11) in a planar view is wave-shaped as having a ridge portion (17) and a valley portion (18) arranged alternately and continuously. The valley portion (18) of the wave-like corrugated surface portion (19) includes an oblique valley portion (18a) of which end part is opened to a side portion of the base body (15) facing to the predetermined direction as being extended obliquely against the predetermined direction to obliquely guide objects such as dust to be stuck to a cleaning sheet (13) in accordance with wiping of the surface to be cleaned.

Abstract: A lower face of a base body (15) includes a wave-like corrugated surface portion (19) of which cross-section in a direction perpendicular to a predetermined direction along which cleaning is performed with a cleaning device body (11) in a planar view is wave-shaped as having a ridge portion (17) and a valley portion (18) arranged alternately and continuously. The valley portion (18) of the wave-like corrugated surface portion (19) includes an oblique valley portion (18a) of which end part is opened to a side portion of the base body (15) facing to the predetermined direction as being extended obliquely against the predetermined direction to obliquely guide objects such as dust to be stuck to a cleaning sheet (13) in accordance with wiping of the surface to be cleaned.

Abstract: A low on-resistance silicon carbide semiconductor device is provided to include an ohmic electrode of low contact resistance and high adhesion strength formed on a lower surface of silicon carbide. Specifically, the silicon carbide semiconductor device includes at least an insulating film, formed on an upper surface of a silicon carbide substrate, and includes at least an ohmic electrode, formed of an alloy comprising nickel and titanium, or formed of a silicide comprising nickel and titanium, and which is formed on the lower surface of the silicon carbide substrate.

Abstract: The object is to provide a method for the fabrication of a semiconductor device having undergone an anneal treatment for the purpose of forming such ohmic contact as enables decrease of ohmic contact resistance and being provided on the (000-1) plane of silicon carbide with an insulating film and provide the semiconductor device. The method for the fabrication of a silicon carbide semiconductor device includes the steps of performing thermal oxidation on the (000-1) plane of a silicon carbide semiconductor in a gas containing at least oxygen and moisture, thereby forming an insulating film in such a manner as to contact the (000-1) plane of the silicon carbide semiconductor, removing part of the insulating film, thereby forming an opening part therein, depositing contact metal on at least part of the opening part, and performing a heat treatment, thereby forming a reaction layer of the contact metal and silicon carbide, wherein the heat treatment is implemented in a mixed gas of an inert gas and hydrogen.

Abstract: A power tool includes a driving unit for performing screw tightening operations; a motor for rotatably driving the driving unit; a rechargeable battery pack; a trigger switch for turning on and off the motor; and a control circuit, accommodated in a main body of the power tool, for monitoring the screw tightening operations. The control circuit has a screw tightening completion detection unit for detecting completion of a screw tightening operation, a screw tightening count unit for counting the number of detected tightening operations, a screw tightening number setting unit for presetting the number of screws to be tightened, a screw tightening completion notifying unit for notifying completion of the screw tightening operations when the number of detected tightening operations reaches the preset number. Further, the screw tightening number setting unit and the screw tightening completion notifying unit is disposed at a lower front portion of a grip portion.

Abstract: A low on-resistance silicon carbide semiconductor device is provided that includes an ohmic electrode of low contact resistance and high adhesion strength formed on a lower surface of silicon carbide. The silicon carbide semiconductor device includes: at least an insulating film 7, formed on an upper surface of silicon carbide; and at least an ohmic electrode 12, formed of an alloy comprising nickel and titanium, or a silicide comprising nickel and titanium, and which is formed on the lower surface of the silicon carbide.

Abstract: The object is to provide a method for the fabrication of a semiconductor device having undergone an anneal treatment for the purpose of forming such ohmic contact as enables decrease of ohmic contact resistance and being provided on the (000-1) plane of silicon carbide with an insulating film and provide the semiconductor device. The method for the fabrication of a silicon carbide semiconductor device includes the steps of performing thermal oxidation on the (000-1) plane of a silicon carbide semiconductor in a gas containing at least oxygen and moisture, thereby forming an insulating film in such a manner as to contact the (000-1) plane of the silicon carbide semiconductor, removing part of the insulating film, thereby forming an opening part therein, depositing contact metal on at least part of the opening part, and performing a heat treatment, thereby forming a reaction layer of the contact metal and silicon carbide, wherein the heat treatment is implemented in a mixed gas of an inert gas and hydrogen.

Abstract: The present invention relates to a method of removing a residual ethylene oxide monomer in polyethylene oxide used as a raw material for pharmaceutical preparations. More particularly, the method of the present invention comprises retaining high-molecular weight polyethylene oxide particles at a temperature not higher than a crystal melting point of the polyethylene oxide in the absence of an aggregation inhibitor under an atmospheric pressure in the standing state and, then, cooling the particles to 40° C. or lower under an atmospheric pressure and in the standing state, thereby, reducing a residual ethylene oxide monomer concentration to 1 ppm or lower without influencing on physical properties such as a specific surface area of the high-molecular weight polyethylene oxide particles.

Abstract: A power tool includes a driving unit for performing screw tightening operations; a motor for rotatably driving the driving unit; a rechargeable battery pack; a trigger switch for turning on and off the motor; and a control circuit, accommodated in a main body of the power tool, for monitoring the screw tightening operations. The control circuit has a screw tightening completion detection unit for detecting completion of a screw tightening operation, a screw tightening count unit for counting the number of detected tightening operations, a screw tightening number setting unit for presetting the number of screws to be tightened, a screw tightening completion notifying unit for notifying completion of the screw tightening operations when the number of detected tightening operations reaches the preset number. Further, the screw tightening number setting unit and the screw tightening completion notifying unit is disposed at a lower front portion of a grip portion.

Abstract: According to a process for production of alkylene oxide polymers offered by the present invention, an alkylene oxide is subjected to a polymerization reaction under presence of a catalyst in a solvent containing an aliphatic hydrocarbon having from five to seven carbon atoms and a branched structure. The aliphatic hydrocarbon is provided preferably by 2-methyl pentane, 3-methyl pentane, 2,3-dimethyl pentane, 2,4-dimethyl pentane, etc. The alkylene oxide is provided preferably by ethylene oxides and/or propylene oxides.

Abstract: According to a process for production of alkylene oxide polymers offered by the present invention, an alkylene oxide is subjected to a polymerization reaction under presence of a catalyst in a solvent containing an aliphatic hydrocarbon having from five to seven carbon atoms and a branched structure. The aliphatic hydrocarbon is provided preferably by 2-methyl pentane, 3-methyl pentane, 2,3-dimethyl pentane, 2,4-dimethyl pentane, etc. The alkylene oxide is provided preferably by ethylene oxides and/or propylene oxides.

Abstract: A reverse flow prevention apparatus is provided so as to drastically decrease pressure loss without installing an independent pressure regulator mechanism therein. With the reverse flow prevention apparatus, a flow path running along a straight line is provided in an outer box, and is partitioned by a diaphragm into an upstream region, and the downstream of a midstream region. An inner cylindrical body is provided at the center of the diaphragm, integrally therewith, so as to fit slidably into the upstream region of the outer box, an escape valve is provided on the downstream side of the inner cylindrical body in such a way as to be able to freely open and close a valve port provided between the midstream region and the downstream region while the escape valve is energized towards valve opening by the urging of an escape valve spring, and first and second check valves are provided inside the inner cylindrical body and the downstream region of the outer box, respectively.