Abstract: For simulation of an electric characteristic of a circuit including transistors, a plurality of transistors are arranged in a matrix pattern on the basis of sizes of the transistors, and data of the electric characteristic measured on first transistors among the plurality of transistors are stored in the matrix pattern. When a position of a second transistor different from the first transistors is specified in the matrix pattern, data of the electric characteristic of the second transistor are determined according to interpolation rules by using the measured data of the one or more first transistors if there are one or more first transistors in the plurality of first transistor at one or more positions adjacent to the position of the second transistor in the matrix pattern.

Abstract: A method of and device for simulation which represents variations in electrical characteristics (Idsat, Vth and the like) of a device constituting a semiconductor integrated circuit in the form of a corner model including corners defining the limits of the variations is provided. A circuit simulation is performed to determine device parameter sensitivities which are the derivatives of the electrical characteristics with respect to device parameters such as &Dgr;L, &Dgr;W, Tox and Vth0. Variations in the device parameters at each corner are determined by applying the device parameter sensitivities and the values of the electrical characteristics required for each corner to the normal equation of the linear least squares method. The method and device can determine the values of a set of device parameters at each corner without the need to repeat the circuit simulation and can uniquely determine the values of the set of device parameters.