Abstract: The piezoelectric material of the present invention includes a main component composed of a perovskite-type metal oxide represented by Formula (1), at least one of Mn and Ni, and Mg. The content of Ni is 0 mol or more and 0.05 mol or less based on 1 mol of the perovskite-type metal oxide, and the content of Mn is 0 mol or more and 0.005 mol or less based on 1 mol of the perovskite-type metal oxide, provided that the content of Mn and the content of Ni are not simultaneously 0 mol. The content of Mg is 0.001 mol or more and 0.020 mol or less based on 1 mol of the perovskite-type metal oxide. Formula (1): (NaxBa1-y)(NbyTi1-y)O3 (where x is 0.83 or more and 0.95 or less, y is 0.85 or more and 0.95 or less, and x/y is 0.95 or more and 1.05 or less).

Abstract: A heat receiving block formed of carbon material having a through hole; a cooling tube formed of copper alloy fitted in the through hole of the heat receiving block; cylindrical material of interlayer disposed between the heat receiving block and the cooling tube; and brazing material layers inserted between the material of interlayer and the heat receiving block and between the material of interlayer and the cooling tube, also a slit which penetrates the heat receiving block and the material of interlayer over thickness of the heat receiving block and reaches the cooling tube on the back side of the heat receiving surface. It can provide heat receiving tile formed of carbon fiber composite material for high heat flux component such as a first wall of nuclear fusion reactor, which is produced by metallurgically joining carbon material with copper alloy and has higher cooling efficiency than conventional heat receiving tiles.

Abstract: A session control method includes storing control information in which a first connection established on a first apparatus side in relation to a relay process is associated with a second connection established on a second apparatus side in relation to the relay process; terminating, when a close instruction message at a communication layer higher than the first and second connections is issued from the first apparatus to the second apparatus, the close instruction message on the relay process and updating the control information; and enabling, when a switchover notice indicating a switch from the first apparatus to a third apparatus is given and the control information indicates the issuance of the close instruction message, a third connection established on the third apparatus side in relation to the relay process and updating the control information in such a manner that the second connection is associated with the third connection.

Abstract: The piezoelectric material of the present invention includes a main component composed of a perovskite-type metal oxide represented by Formula (1), Zn, and Mg. The content of Zn is 0.005 mol or more and 0.050 mol or less based on 1 mol of the perovskite-type metal oxide, and the content of Mg is 0.001 mol or more and 0.020 mol or less based on 1 mol of the perovskite-type metal oxide. Formula (1): (NaxBa1-y)(NbyTi1-y)O3 (where x is 0.83 or more and 0.95 or less, y is 0.85 or more and 0.95 or less, and x/y is 0.95 or more and 1.05 or less).

Abstract: A data transfer controlling method for a plurality of nodes executed by a processor included in an information processing apparatus, the data transfer controlling method includes calculating an amount of data to be transmitted from a first process to a second process while the second process is moved from a second node to a third node, the first process being executed in a first node; determining buffer availability of a plurality of nodes on a first route that couples the first node to the second node; determining whether the buffer availability of the first route is greater than the calculated amount of data; and when the buffer availability of the first route is greater than the calculated amount of data, selecting the first route as a transfer route of the data.

Abstract: Provided are a resin film which exhibits an excellent low reflectivity, a coloring photosensitive composition capable of forming a resin film which exhibits an excellent low reflectivity, a resin film production method, a color filter, a light shielding film, a solid-state imaging element, and an image display device. The resin film of the present invention includes at least two or more resins, a coloring agent, and a photoacid generator, in which the resin film has a peak at which the value of A1/A2 is greater than 0.1 and 2.5 or less in a light scattering measurement of the resin film, in the case where a half-width of the peak is A1 and a scattering angle of a maximum light intensity of the peak is A2 in a spectrum in which a scattering angle is plotted on the horizontal axis and a scattered light intensity is plotted on the vertical axis.

Abstract: Provided are a coloring photosensitive composition that is curable in a low-temperature environment, as well as a cured film, a color filter, a light-shielding film, a solid-state imaging device, an image display device, and a method for producing a cured film, in which the coloring photosensitive composition is used. The coloring photosensitive composition contains a coloring agent, a polymerizable compound, and a photopolymerization initiator, in which the photopolymerization initiator in the form of a solution in which 0.001% by mass of the photopolymerization initiator is dissolved in acetonitrile has an absorbance of 0.45 or more at a wavelength of 340 nm.

Abstract: The piezoelectric material of the present invention includes a main component composed of a perovskite-type metal oxide represented by Formula (1), Zn, and Mg. The content of Zn is 0.005 mol or more and 0.050 mol or less based on 1 mol of the perovskite-type metal oxide, and the content of Mg is 0.001 mol or more and 0.020 mol or less based on 1 mol of the perovskite-type metal oxide. Formula (1): (NaxBa1-y)(NbyTi1-y)O3 (where x is 0.83 or more and 0.95 or less, y is 0.85 or more and 0.95 or less, and x/y is 0.95 or more and 1.05 or less).

Abstract: The piezoelectric material of the present invention includes a main component composed of a perovskite-type metal oxide represented by Formula (1), at least one of Mn and Ni, and Mg. The content of Ni is 0 mol or more and 0.05 mol or less based on 1 mol of the perovskite-type metal oxide, and the content of Mn is 0 mol or more and 0.005 mol or less based on 1 mol of the perovskite-type metal oxide, provided that the content of Mn and the content of Ni are not simultaneously 0 mol. The content of Mg is 0.001 mol or more and 0.020 mol or less based on 1 mol of the perovskite-type metal oxide. Formula (1): (NaxBa1-y)(NbyTi1-y)O3 (where x is 0.83 or more and 0.95 or less, y is 0.85 or more and 0.95 or less, and x/y is 0.95 or more and 1.05 or less).

Abstract: A piezoelectric material contains a perovskite-type metal oxide represented by general formula (1) as a main component: (Ba1?x?yCaxSny)?(Ti1?zZrz)O3??General formula (1) (where 0.020?x?0.200, 0.020?y?0.200, 0.050<z?0.085, 0.986???1.100).

Abstract: Provided is a piezoelectric element including a substrate, electrodes, and a piezoelectric film, the piezoelectric film including an oxide including Ba, Ca, Ti, and Zr, and at least one element of Mn and Bi in which: 0.09?x?0.30 is satisfied, where x is a mole ratio of Ca to a sum of Ba and Ca; 0.025?y?0.085 is satisfied, where y is a mole ratio of Zr to a sum of Ti, Zr, and Sn; and 0?z?0.02 is satisfied, where z is a mole ratio of Sn to the sum of Ti, Zr, and Sn; a total content Save of Mn and Bi is 0.0020 moles or more and 0.0150 moles or less for 1 mole of the oxide; and a total content Sbou of Mn and Bi in a region of the piezoelectric film adjacent to one of the electrodes is smaller than Save.

Abstract: A piezoelectric material that has good insulating properties and piezoelectricity and is free of lead and potassium and a piezoelectric element that uses the piezoelectric material are provided. The piezoelectric material contains copper and a perovskite-type metal oxide represented by general formula (1): (1?x){(NayBa1?z)(NbzTi1?z) O3}-xBiFeO3 (where 0<x?0.015, 0.80?y?0.95, and 0.85 ?z?0.95). In the piezoelectric material, 0.04 mol % or more and 2.00 mol % or less of Cu is contained relative to 1 mol of the perovskite-type metal oxide. Also provided is a piezoelectric element that includes a first electrode, a piezoelectric material, and a second electrode, in which the piezoelectric material described above is used as the piezoelectric material.

Abstract: The present invention provides a piezoelectric element that includes a piezoelectric material having first and second surfaces; a common electrode disposed on the first surface; and a plurality of drive phase electrodes, a detection phase electrode, and a non-drive phase electrode disposed on the second surface, the piezoelectric material being sandwiched between the common electrode and the electrodes on the second surface. An absolute value d(1) of a piezoelectric constant of the piezoelectric material (1) in portions sandwiched between the drive phase electrodes and the common electrode, an absolute value d(2) of a piezoelectric constant of the piezoelectric material (2) in a portion sandwiched between the detection phase electrode and the common electrode, and an absolute value d(3) of the piezoelectric material (3) in a portion sandwiched between the non-drive phase electrode and the common electrode satisfy d(2)<0.95d(1), d(3)<0.95d(1), and 0.9?d(3)/d(2)?1.1.

Abstract: Provided is a piezoelectric element containing no lead therein and having satisfactory and stable piezoelectric properties in a temperature range in which the piezoelectric element is used. In order to attain this, the piezoelectric element includes a substrate, a first electrode, a piezoelectric film, and a second electrode. The piezoelectric film contains barium zirconate titanate, manganese, and bismuth in a charge disproportionation state in which trivalent Bi and pentavalent Bi coexist. The piezoelectric film satisfies 0.02?x?0.13, where x is a mole ratio of zirconium to the sum of zirconium and titanium. A manganese content is 0.002 moles or more and 0.015 moles or less for 1 mole of barium zirconate titanate, and a bismuth content is 0.00042 moles or more and 0.00850 moles or less for 1 mole of barium zirconate titanate.

Abstract: A piezoelectric element includes a substrate, a first electrode, a piezoelectric film and a second electrode that are sequentially placed in the above-mentioned order. The piezoelectric film contains oxides of Ba, Bi, Ti, Zr, Fe and Mn and has a perovskite structure, wherein the molar ratio y of Bi relative to the sum of Ba and Bi is 0.001?y?0.015, the molar ratio x of Zr relative to the sum of Ti, Zr, Fe and Mn is 0.010?x?0.060, the molar ratio z of Fe relative to the sum of Ti, Zr, Fe and Mn is 0.001?z?0.015, and the molar ratio m of Mn relative to the sum of Ti, Zr, Fe and Mn is 0.0020?m?0.0150, while the relationship between y and z is expressed by 0.90?y/z?1.10.

Abstract: A piezoelectric material including a perovskite-type metal oxide represented by the following general formula (1); Bi; and Mn, wherein the content of Bi is 0.1-0.5 mol % with respect to 1 mol of the metal oxide, the content of Mn is 0.3-1.5 mol % with respect to 1 mol of the metal oxide, and the piezoelectric material satisfies (L4?L5)/L5?0.05 and (L8?L9)/L9?0.05 when the lengths of twelve Bi—O bonds with Bi that is located at a 12-fold site with respect to O in a perovskite-type unit cell as a starting point are taken to be L1 to L12 in length order: (Ba1-xM1x)(Ti1-yM2y)O3??(1) wherein 0?x?0.2, 0?y?0.1, and M1 and M2 are mutually different metal elements which have a total valence of +6 and are selected from other elements than Ba, Ti, Bi and Mn.

Abstract: Provided are a barium titanate-based piezoelectric ceramics having satisfactory piezoelectric performance and a satisfactory mechanical quality factor (Qm), and a piezoelectric element using the same. Specifically provided are a piezoelectric ceramics, including: crystal particles; and a grain boundary between the crystal particles, in which the crystal particles each include barium titanate having a perovskite-type structure and manganese at 0.04% by mass or more and 0.20% by mass or less in terms of a metal with respect to the barium titanate, and the grain boundary includes at least one compound selected from the group consisting of Ba4Ti12O27 and Ba6Ti17O40, and a piezoelectric element using the same.

Abstract: A piezoelectric material contains a main component containing a perovskite-type metal oxide represented by general formula (1), a first sub-component containing Mn, and a second sub-component containing Bi or Bi and Li. A Mn content relative to 100 parts by weight of the metal oxide is 0.500 parts by weight or less (including 0 parts by weight) in terms of metal, a Bi content relative to 100 parts by weight of the metal oxide is 0.042 parts by weight or more and 0.850 parts by weight or less in terms of metal, and a Li content relative to 100 parts by weight of the metal oxide is 0.028 parts by weight or less (including 0 parts by weight) in terms of metal: (Ba1?x?yCaxSny)?(Ti1?zZrz)O3 (where 0.020?x?0.200, 0.020?y?0.200, 0?z?0.085, 0.986???1.100)??General formula (1).

Abstract: The present invention provides a curable composition which is suitably used for the production of a light-shielding film which has excellent light-shielding properties, exhibits low reflectivity, has excellent pattern linearity, and is not susceptible to chipping; an infrared cut filter with a light-shielding film; and a solid-state imaging device. The curable composition according to the present invention includes a curable compound which has at least one selected from the group consisting of a fluorine atom, a silicon atom, a linear alkyl group having 8 or more carbon atoms, and a branched alkyl group having 3 or more carbon atoms, and a curable functional group; a silane coupling agent; and a black pigment.

Abstract: Provided is a lead-free piezoelectric material having satisfactory and stable piezoelectric constant and mechanical quality factor in a wide practical use temperature range. The piezoelectric material includes a perovskite-type metal oxide represented by Formula (1): (Ba1?xCax)a(Ti1?yZry)O3 (wherein, 1.00?a?1.01, 0.125?x?0.300, and 0.041?y?0.074), Mn, and Mg. The content of Mn is 0.12 parts by weight or more and 0.40 parts by weight or less based on 100 parts by weight of the perovskite-type metal oxide on a metal basis. The content of Mg is 0.10 parts by weight or less (excluding 0 part by weight) based on 100 parts by weight of the perovskite-type metal oxide on a metal basis.