Patents by Inventor Makoto Kurotobi
Makoto Kurotobi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8029685Abstract: A method of manufacturing a liquid ejection head and a liquid ejection head capable of preventing corrosion of electrodes are provided. The method of manufacturing a liquid ejection head includes: a step of forming porous silicon areas in portions of a silicon substrate where the liquid paths are to be formed; a step of forming in layers in the porous silicon areas a protective layer, a heating resistor layer, an electrode layer and a heat accumulation layer; a step of forming ink ejection openings in the silicon substrate; and a step of removing the porous silicon areas.Type: GrantFiled: September 4, 2007Date of Patent: October 4, 2011Assignee: Canon Kabushiki KaishaInventors: Hirokazu Komuro, Makoto Kurotobi, Tadashi Atoji, Takehito Okabe
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Publication number: 20100225712Abstract: A method for manufacturing an inkjet head includes providing a piezoelectric substrate having a porous structure, a diaphragm on the porous structure, and a piezoelectric substance layer on the diaphragm, and forming a cavity by etching out the porous structure from the piezoelectric substrate.Type: ApplicationFiled: May 17, 2010Publication date: September 9, 2010Applicant: CANON KABUSHIKI KAISHAInventors: Takehito Okabe, Nobuhiko Sato, Makoto Kurotobi, Kenichi Takeda, Toshihiro Ifuku
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Patent number: 7743503Abstract: A method for manufacturing an inkjet head includes providing a piezoelectric substrate having a porous structure, a diaphragm on the porous structure, and a piezoelectric substance layer on the diaphragm, and forming a cavity by etching out the porous structure from the piezoelectric substrate.Type: GrantFiled: September 1, 2005Date of Patent: June 29, 2010Assignee: Canon Kabushiki KaishaInventors: Takehito Okabe, Nobuhiko Sato, Makoto Kurotobi, Kenichi Takeda, Toshihiro Ifuku
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Patent number: 7636993Abstract: A method for producing a piezoelectric film actuator is provided. This method includes the steps of preparing an intermediate transfer member having a porous layer formed thereon, with a vibrating plate and a piezoelectric layer being provided on the porous layer; bonding the vibrating plate to a nozzle substrate to form a composite structure; and separating the intermediate transfer member from the composite structure at the porous layer to transfer the vibrating plate and the piezoelectric layer to the nozzle substrate.Type: GrantFiled: September 6, 2005Date of Patent: December 29, 2009Assignee: Canon Kabushiki KaishaInventors: Takehito Okabe, Nobuhiko Sato, Makoto Kurotobi, Kenichi Takeda, Toshihiro Ifuku
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Method for producing piezoelectric film actuator, and composite structure having piezoelectric layer
Publication number: 20080307622Abstract: A method for producing a piezoelectric film actuator is provided. This method includes the steps of preparing an intermediate transfer member having a porous layer formed thereon, with a vibrating plate and a piezoelectric layer being provided on the porous layer; bonding the vibrating plate to a nozzle substrate to form a composite structure; and separating the intermediate transfer member from the composite structure at the porous layer to transfer the vibrating plate and the piezoelectric layer to the nozzle substrate.Type: ApplicationFiled: April 18, 2008Publication date: December 18, 2008Applicant: CANON KABUSHIKI KAISHAInventors: Takehito Okabe, Nobuhiko Sato, Makoto Kurotobi, Kenichi Takeda, Toshihiro Ifuku -
Publication number: 20080076197Abstract: A method of manufacturing a liquid ejection head and a liquid ejection head capable of preventing corrosion of electrodes are provided. A method of manufacturing a liquid ejection head includes: a steps of forming porous silicon areas in portions of a silicon substrate where the liquid paths are to be formed; a steps of forming in layers in the porous silicon areas a protective layer, a heating resistor layer, an electrode layer and a heat accumulation layer; a steps of forming ink ejection openings in the silicon substrate; and a steps of removing the porous silicon areas.Type: ApplicationFiled: September 4, 2007Publication date: March 27, 2008Applicant: CANON KABUSHIKI KAISHAInventors: Hirokazu Komuro, Makoto Kurotobi, Tadashi Atoji, Takehito Okabe
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Publication number: 20070243330Abstract: Disclosed is a manufacturing method of a liquid discharge head having a discharge port which discharges a liquid, a flow path which communicates with the discharge port, a heating portion which is disposed correspondingly to the flow path and which generates heat energy for use in discharging the liquid from the discharge port and a protective layer which prevents the heating portion from being brought into contact with the liquid, the method comprising: forming porous silicon from a surface to an inner portion of a silicon substrate; sealing pores present in the surface of the porous silicon to smoothen the surface of the porous silicon; forming the protective layer on the smoothened surface of the porous silicon; forming the heating portion on the protective layer; forming the discharge port; and removing the porous silicon to form the flow path.Type: ApplicationFiled: March 29, 2007Publication date: October 18, 2007Applicant: CANON KABUSHIKI KAISHAInventors: Hirokazu Komuro, Makoto Kurotobi, Tadashi Atoji, Takehito Okabe
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Publication number: 20060049135Abstract: A method for manufacturing an inkjet head includes providing a piezoelectric substrate having a porous structure, a diaphragm on the porous structure, and a piezoelectric substance layer on the diaphragm, and forming a cavity by etching out the porous structure from the piezoelectric substrate.Type: ApplicationFiled: September 1, 2005Publication date: March 9, 2006Applicant: Canon Kabushiki KaishaInventors: Takehito Okabe, Nobuhiko Sato, Makoto Kurotobi, Kenichi Takeda, Toshihiro Ifuku
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Method for producing piezoelectric film actuator, and composite structure having piezoelectric layer
Publication number: 20060049723Abstract: A method for producing a piezoelectric film actuator is provided. This method includes the steps of preparing an intermediate transfer member having a porous layer formed thereon, with a vibrating plate and a piezoelectric layer being provided on the porous layer; bonding the vibrating plate to a nozzle substrate to form a composite structure; and separating the intermediate transfer member from the composite structure at the porous layer to transfer the vibrating plate and the piezoelectric layer to the nozzle substrate.Type: ApplicationFiled: September 6, 2005Publication date: March 9, 2006Applicant: CANON KABUSHIKI KAISHAInventors: Takehito Okabe, Nobuhiko Sato, Makoto Kurotobi, Kenichi Takeda, Toshihiro Ifuku -
Patent number: 6479409Abstract: Disclosed is a method of fabricating a semiconductor device, in which an interlayer insulating film having a low dielectric constant is formed by coating a wiring, and either a via hole or a contact hole is formed in the interlayer insulating film. The method of fabricating a semiconductor device having the interlayer insulating film 25 formed on the film-formed substrate 21 with the exposed wiring 23, comprises the step of converting a silicon compound containing only the Si, O, C and H into a plasma gas as a film-forming gas to react the plasma gas, thus forming the block insulating film 24 containing silicon (Si), oxygen (O), carbon (C) and hydrogen (H) between the wiring 23 and the interlayer insulating film 25.Type: GrantFiled: February 23, 2001Date of Patent: November 12, 2002Assignees: Canon Sales Co., Inc., Semiconductor Process Laboratory Co., Ltd.Inventors: Yoshimi Shioya, Kouichi Ohira, Kazuo Maeda, Tomomi Suzuki, Hiroshi Ikakura, Youichi Yamamoto, Yuichiro Kotake, Shoji Ohgawara, Makoto Kurotobi
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Patent number: 6472330Abstract: A method for forming an interlayer insulating film includes the steps of: forming a metal film on a substrate; forming a first insulating film on the metal film; patterning the first insulating film by selectively etching the first insulating film; patterning the metal film by etching the metal film using the patterned first insulating film as a mask; forming an overhang portion of the first insulating film on the metal film by selectively etching a side portion of the metal film; and forming a second insulating film on the entire structure.Type: GrantFiled: May 17, 2000Date of Patent: October 29, 2002Assignees: Canon Sales Co., Inc., Semiconductor Process Laboratory Co., Ltd.Inventors: Toshio Kato, Noboru Tokumasu, Makoto Kurotobi, Taizo Oku
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Publication number: 20010031563Abstract: Disclosed is a method of fabricating a semiconductor device, in which an interlayer insulating film having a low dielectric constant is formed by coating a wiring, and either a via hole or a contact hole is formed in the interlayer insulating film. The method of fabricating a semiconductor device having the interlayer insulating film 25 formed on the film-formed substrate 21 with the exposed wiring 23, comprises the step of converting a silicon compound containing only the Si, O, C and H into a plasma gas as a film-forming gas to react the plasma gas, thus forming the block insulating film 24 containing silicon (Si), oxygen (O), carbon (C) and hydrogen (H) between the wiring 23 and the interlayer insulating film 25.Type: ApplicationFiled: February 23, 2001Publication date: October 18, 2001Applicant: CANON SALES CO., INC.Inventors: Yoshimi Shioya, Kouichi Ohira, Kazuo Maeda, Tomomi Suzuki, Hiroshi Ikakura, Youichi Yamamoto, Yuichiro Kotake, Shoji Ohgawara, Makoto Kurotobi