Abstract: A dielectric composition contains barium titanate, an oxide of yttrium, and an oxide of magnesium. 0.70??/??1.10 is satisfied, where a content of the oxide of yttrium is ? mol part in terms of Y2O3, and a content of the oxide of magnesium is ? mol part in terms of MgO.

Abstract: The pattern forming method of the invention includes (i) a step of forming a first film on a substrate using an actinic ray-sensitive or radiation-sensitive resin composition including a resin (A) capable of increasing the polarity by the action of an acid to decrease the solubility in a developer including an organic solvent; (ii) a step of exposing the first film; (iii) a step of developing the exposed first film using a developer including an organic solvent to form a negative tone pattern; and (iv) a step of forming a second film on the second substrate so as to cover the periphery of the negative tone pattern.

Abstract: A dielectric composition contains barium titanate, an oxide of yttrium, and an oxide of magnesium. 0.70??/??1.10 is satisfied, where a content of the oxide of yttrium is ? mol part in terms of Y2O3, and a content of the oxide of magnesium is ? mol part in terms of MgO.

Abstract: The pattern forming method of the invention includes (i) a step of forming a first film on a substrate using an actinic ray-sensitive or radiation-sensitive resin composition including a resin (A) capable of increasing the polarity by the action of an acid to decrease the solubility in a developer including an organic solvent; (ii) a step of exposing the first film; (iii) a step of developing the exposed first film using a developer including an organic solvent to form a negative tone pattern; and (iv) a step of forming a second film on the second substrate so as to cover the periphery of the negative tone pattern.

Abstract: A positive resist composition comprising (A) a resin comprising at least one kind of acrylate derivative repeating units, repeating units having lactone structures and repeating units having hydroxy group-substituted adamantane structures, having a glass transition temperature in the range of 70 to 155° C. and capable of increasing its solubility in an alkali developer under action of an acid, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, and (C) an organic solvent.

Abstract: A positive resist composition comprising (A) a resin capable of increasing its solubility in an alkali developer under action of an acid, wherein the resin contains a repeating unit originated in an acrylic acid ester derivative in an amount of 50 to 100 mol % based on all repeating units and has a repeating unit having a specific lactone structure and a repeating unit having a monohydroxyadamantane or dihydroxyadamantane structure, (B) a compound of generating an acid upon irradiation with actinic rays or radiation, and (C) an organic solvent, and a pattern formation method using the composition.

Abstract: A positive photoresist composition comprising: (A) an oxime sulfonate compound represented by the specific formula, (B) a resin comprising repeating units including a group represented by the specific formula and which increases the solubility in an alkaline developing solution by the action of an acid, and (C) a fluoroaliphatic-group-containing polymeric compound containing repeating units derived from a monomer represented by the specific formula.

Abstract: A composition for a bottom anti-reflective coating material and a method for forming a resist pattern using the composition, which are high in the dry etching rate, high in the resolution, excellent in the resist film thickness dependency and high in the effect of preventing reflective light against exposure light, and provide no intermixing with the photoresist layer, are disclosed, wherein the composition for a bottom anti-reflective coating material comprises a naphthalene group-containing polymer compound having a specific structure.

Abstract: A positive resist composition comprising (A) a resin capable of increasing its solubility in an alkali developer under action of an acid, wherein the resin contains a repeating unit originated in an acrylic acid ester derivative in an amount of 50 to 100 mol % based on all repeating units and has a repeating unit having a specific lactone structure and a repeating unit having a monohydroxyadamantane or dihydroxyadamantane structure, (B) a compound of generating an acid upon irradiation with actinic rays or radiation, and (C) an organic solvent, and a pattern formation method using the composition.

Abstract: A positive resist composition comprising (A) a resin comprising at least one kind of acrylate derivative repeating units, repeating units having lactone structures and repeating units having hydroxy group-substituted adamantane structures, having a glass transition temperature in the range of 70 to 155° C. and capable of increasing its solubility in an alkali developer under action of an acid, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, and (C) an organic solvent.

Abstract: A positive photoresist composition comprising:

Abstract: A resist composition containing a compound generating an acid by irradiation of an active ray or radiation and having a sulfonimide structure represented by formula (I) defined in the specification, which is excellent in sensitivity, resolution, pattern profile and edge roughness.

Abstract: A positive photoresist composition comprising the components of: (a) a resin which decomposes by the action of an acid, thereby having an increased solubility in an alkali developer; and (b) a compound which is represented by the formula (1) and generates an acid by exposure to active rays or radiation, and a compound which is represented by the formula (2) and generates an acid by exposure to active rays or radiation.

Abstract: A bottom anti-reflective coating material composition for a photoresist comprising the following components (a) to (d): (a) a polymer containing a dye structure having a molar extinction coefficient of 1.0×104 or more to light including a wavelength used for exposure of the photoresist; (b) a thermal crosslinking agent which is activated by an acid to react with component (a) described above, thereby forming a crosslinked structure; (c) a sulfonic acid ester compound or diaryl iodonium salt, which is decomposed to generate an acid with heating at temperature between 150 to 200° C.; and (d) an organic solvent capable of dissolving components (a) to (c) described above.

Abstract: A bottom anti-reflective coating material composition for a photoresist comprising the following components (a) to (d):

Abstract: A composition for a bottom anti-reflective coating material and a method for forming a resist pattern using the composition, which are high in the dry etching rate, high in the resolution, excellent in the resist film thickness dependency and high in the effect of preventing reflective light against exposure light, and provide no intermixing with the photoresist layer, are disclosed, wherein the composition for a bottom anti-reflective coating material comprises a naphthalene group-containing polymer compound having a specific structure.

Abstract: Provided are a method of synthesizing a highly pure polyphenol compound, which comprises (i) introducing at least one --CHRNR'R" group onto aromatic ring(s) of a phenol compound having from one to ten aromatic ring(s), wherein R represents a hydrogen atom, an alkyl group which may contain a hetero atom, a cycloalkyl group which may contain a hetero atom, an aralkyl group which may contain a hetero atom, or an aryl group, and R' and R", which may be the same or different, each represents an alkyl group which may contain a hetero atom, a cycloalkyl group which may contain a hetero atom, an aralkyl group which may contain a hetero atom, or an aryl group, and R' and R" may combine with each other to form a ring, (ii) converting the --CHRNR'R" group into a --CHRA group via one to three steps, wherein A represents a hydroxyl group, an alkoxy group, an acyloxy group, a halogen atom, a quaternary ammonium salt or a sulfonyloxy group, and (iii) condensing the thus converted phenol compound and a phenol compound, and a

Abstract: There are provided a positive photoresist composition comprising an alkali-soluble resin and a 1,2-naphthoquinonediazide-5-(and/or-4-) sulfonic ester of a tetrahydroxy compound having a specific structure, said ester component having a pattern area in the high-performance liquid chromatography determined using ultraviolet rays of 254 nm accounting for 50% or more of the entire pattern area and a positive photoresist composition comprising an alkali-soluble resin and 1,2-naphthoquinonediazide-5-(and/or -4-)sulfonic esters of two kinds of specific polyhydroxy compounds. The positive photoresist is suitable for ultrafine working and ensures high sensitivity and high resolution and is improved with respect to film thickness dependency and standing wave.

Abstract: A positive photoresist composition for ultrafine working ensuring high sensitivity, high resolution, improved film thickness dependency and improved exposure margin, which comprises an alkali-soluble resin and a 1,2-naphthoquinonediazide-5-(and/or -4-)sulfonic ester of a polyhydroxy compound of formula (I), the tetraester component thereof accounting for 50% or more of the entire pattern area determined by high-performance liquid chromatography using ultraviolet rays of 254 nm: ##STR1## wherein X represents ##STR2## and the substituents other than X are as defined in the specification.

Abstract: Disclosed is a positive photoresist composition comprising an alkali-soluble resin and 1,2-naphthoquinonediazide-5-(and/or -4-)sulfonic esters of a polyhydroxy compound having a particular structure consisting of 5 aromatic rings linked linearly, in which each of the aromatic rings contains a hydroxyl group and the respective aromatic rings next to both the terminal rings contains a substituent group at the 5-position to the hydroxyl group thereof. The positive photoresist composition which has high resolution, low dependence of the resolution on film thickness, and broad latitude of development, leaves little development residue, and has very excellent storage stability without separation of photosensitive materials and generation of microgel (no increase in particle) with a lapse of time.