Abstract: Examples of complementary metal oxide semiconductor (CMOS) image sensor are provided. One example CMOS image sensor includes a first plurality of pixel units that are arranged in lattice manner and that are obtained by rotating a rectangular area including four sets of photodiodes and transfer gates (TX) and one charge accumulation portion by 45 degrees. The example CMOS image sensor further includes a second plurality of pixel units that are arranged by shifted in a horizon direction by half of the distance between the centers of the adjacent pixel units in the horizon direction and shifted in a vertical direction by half of the distance between the centers of the adjacent pixel units in the vertical direction from the positions of the respective pixel units of the first plurality of pixel units.

Abstract: Examples of complementary metal oxide semiconductor (CMOS) image sensor are provided. One example CMOS image sensor includes a first plurality of pixel units that are arranged in lattice manner and that are obtained by rotating a rectangular area including four sets of photodiodes and transfer gates (TX) and one charge accumulation portion by 45 degrees. The example CMOS image sensor further includes a second plurality of pixel units that are arranged by shifted in a horizon direction by half of the distance between the centers of the adjacent pixel units in the horizon direction and shifted in a vertical direction by half of the distance between the centers of the adjacent pixel units in the vertical direction from the positions of the respective pixel units of the first plurality of pixel units.

Abstract: According to one embodiment, a solid-state imaging device includes a pixel array and a high dynamic range (HDR) synthesizing circuit 19. A pixel is configured as a small pixel group. The HDR synthesizing circuit 19 includes a valid pixel selecting unit 34, a sensitivity ratio correcting unit 35, and a calculation processing unit 36. The valid pixel selecting unit 34 selects one or more small pixels validating a use of a signal value in the HDR synthesis as a valid pixel from among the small pixel group. The sensitivity ratio correcting unit 35 executes sensitivity ratio correction on the signal value of each small pixel. The calculation processing unit 36 uses the signal value of the valid pixel among the signal values of the small pixels from the sensitivity ratio correcting unit 35 for a calculation for the HDR synthesis.

Abstract: According to one embodiment, a solid-state imaging device including a plurality of pixels two-dimensionally arranged at a preset pitch in a semiconductor substrate is provided. Each of the pixels is configured to include first and second photodiodes that photoelectrically convert incident light and store signal charges obtained by conversion, a first micro-lens that focuses light on the first photodiode, and a second micro-lens that focuses light on the second photodiode. The saturation charge amount of the second photodiode is larger than that of the first photodiode. Further, the aperture of the second micro-lens is smaller than that of the first micro-lens.

Abstract: According to one embodiment, a solid-state imaging device includes a pixel array and a high dynamic range (HDR) synthesizing circuit 19. A pixel is configured as a small pixel group. The HDR synthesizing circuit 19 includes a valid pixel selecting unit 34, a sensitivity ratio correcting unit 35, and a calculation processing unit 36. The valid pixel selecting unit 34 selects one or more small pixels validating a use of a signal value in the HDR synthesis as a valid pixel from among the small pixel group. The sensitivity ratio correcting unit 35 executes sensitivity ratio correction on the signal value of each small pixel. The calculation processing unit 36 uses the signal value of the valid pixel among the signal values of the small pixels from the sensitivity ratio correcting unit 35 for a calculation for the HDR synthesis.

Abstract: According to one embodiment, a solid-state imaging device including a plurality of pixels two-dimensionally arranged at a preset pitch in a semiconductor substrate is provided. Each of the pixels is configured to include first and second photodiodes that photoelectrically convert incident light and store signal charges obtained by conversion, a first micro-lens that focuses light on the first photodiode, and a second micro-lens that focuses light on the second photodiode. The saturation charge amount of the second photodiode is larger than that of the first photodiode. Further, the aperture of the second micro-lens is smaller than that of the first micro-lens.

Abstract: According to one embodiment, a solid-state imaging device includes an imaging region, and a control circuit. In a first operation mode, the control circuit performs control in which signal charges of first and second photodiodes are transmitted to a floating diffusion. In a second operation mode, the control circuit performs control in which a signal charge of the second photodiode is transmitted to the floating diffusion.

Abstract: A transfer gate is formed such that both end portions thereof in a second direction, which crosses a first direction in which a photodiode and a floating diffusion layer that is formed with a distance from the photodiode are arranged, are located inside boundaries with element isolation regions. Channel stopper layers are formed on surface portions of a device region in the vicinity of lower parts of both end portions of the transfer gate in the second direction in such a manner to extend to the boundaries with the element isolation regions.

Abstract: A solid-state image pickup device includes a semiconductor substrate, a photosensitive pixel which converts incident light on the semiconductor substrate into a signal charge, and a charge detection section which converts the converted signal charge into an output signal. The device further includes a charge transfer section which is disposed between the photosensitive pixel and the charge detection section and which temporarily stores the signal charge and which transfers the stored signal charge to the charge detection section by application of sequential pulses.

Abstract: A solid image pickup apparatus includes: a pixel string in which a plurality of photoelectric converting sections corresponding to pixels are arranged in one string; a CCD register, adjacently arranged to the pixel string, for successively transferring in a predetermined direction, signal charges photoelectrically converted in the respective photoelectric converting sections; a transfer electrode for supplying a voltage for transferring to the CCD register; n pieces of wiring layers formed in lamellar shape above the transfer electrode and its periphery via an insulating layer; and a contact having a longest length along an electric charge transfer direction of the CCD register to at least one location between the transfer electrode and the wiring layer and between two wiring layers vertically adjacent to each other via the insulating layer.

Abstract: A solid image pickup apparatus which is not easily susceptible to an influence of an emitted light caused by impact ionization. The solid image pickup apparatus of the present invention includes an output circuit for converting a signal charge outputted from a photoelectric converter into an analog signal and outputting the signal. The output circuit includes a charge-voltage converter for converting the charge transferred from the photoelectric converter into a voltage signal, a plurality of source follower circuits for performing impedance conversion, and a reverse amplification circuit. A gate length of a MOSFET constituting the final-stage source follower circuit in the output circuit is longer than the gate length of the MOSFET of another source follower circuit or the like.

Abstract: A solid image pickup apparatus which is not easily susceptible to an influence of an emitted light caused by impact ionization. The solid image pickup apparatus of the present invention includes an output circuit for converting a signal charge outputted from a photoelectric converter into an analog signal and outputting the signal. The output circuit includes a charge-voltage converter for converting the charge transferred from the photoelectric converter into a voltage signal, a plurality of source follower circuits for performing impedance conversion, and a reverse amplification circuit. A gate length of a MOSFET constituting the final-stage source follower circuit in the output circuit is longer than the gate length of the MOSFET of another source follower circuit or the like.

Abstract: A solid-state image pickup device includes a semiconductor substrate, a photosensitive pixel which converts incident light on the semiconductor substrate into a signal charge, and a charge detection section which converts the converted signal charge into an output signal. The device further includes a charge transfer section which is disposed between the photosensitive pixel and the charge detection section and which temporarily stores the signal charge and which transfers the stored signal charge to the charge detection section by application of sequential pulses.

Abstract: There is disclosed a solid image pickup apparatus which is not easily susceptible to an influence of an emitted light caused by impact ionization. The solid image pickup apparatus of the present invention includes an output circuit for converting a signal charge outputted from a photoelectric converter into an analog signal and outputting the signal. The output circuit includes a charge-voltage converter for converting the charge transferred from the photoelectric converter into a voltage signal, a plurality of source follower circuits for performing impedance conversion, and a reverse amplification circuit. A gate length of a MOSFET constituting the final-stage source follower circuit in the output circuit is longer than the gate length of the MOSFET of another source follower circuit or the like.

Abstract: A color linear image sensor includes first, second and third photosensitive pixel trains disposed in parallel in a manner close to each other, wherein an interpixel transfer section (10) for holding signal charges produced at the second photosensitive pixel train is provided between the second and third photosensitive pixel trains (12, 13). Since read-out operation from the second photosensitive pixel train is carried out by CCD register via the third photosensitive pixel train in the state where holding time is controlled by the interpixel transfer section, it is possible to freely adjust the integral time and the read-out timing.

Abstract: A imaging sensor according to the present invention has pixel lines 1a, 1b and 1c arranged to three lines. At both sides of the pixel lines 1b arranged to the center, the corresponding shift electrodes 21 and 22, and corresponding CCD registers 31 and 32 are provided. At the outside of the outside pixel lines 1a and 1c, the corresponding shift electrodes 2a and 2c, and the corresponding CCD registers 3a and 3c are provided, respectively. Because the CCD registers 3a and 3c corresponding to the pixel lines 1a and 1c of both ends are arranged to the outside of the pixel lines 1a and 1c, it is possible to narrow the distance between the adjacent pixel lines. Because the signal electric charge converted from the optical signal by means of the pixel line 1b arranged to the center is distributed to two CCD registers 31 and 32, even if narrowing the width of each of the CCD registers 31 and 32, it is possible to transfer more amount of the electric charge than the conventional sensor.

Abstract: A solid state imaging device includes a plurality of picture photosensitive pixels (pixel trains P.sub.1 -P.sub.n) for generating signal charges corresponding to an incident light amount, a shift gate (12) and a charge coupled device (CCD) register. (13) for sequentially transferring the signal charges outputted from the picture photosensitive pixels, and a monitor photosensitive pixel for generating signal charges in proportion to a mean value of the incident light amount of a predetermined number of the picture photosensitive pixels. The device further includes a single output circuit for converting both signal charges, one of which are generated in the picture photosensitive pixels and transferred through the shift, gate and CCD register, and the other of which are generated in the monitor photosensitive pixels, into an output signal, thereby providing the solid state imaging device capable of accurately measuring a mean value of the signal charges of the picture photosensitive pixels.

Abstract: A solid state image sensing device has a photoelectric transfer section for transducing incident light into signal charges, at least firs% and second charge transfer paths, a charge transferring section for transferring the signal charges from the photoelectric transfer section to the first path at a first timing and for transferring the signal charges transferred to the first path to the second path at a second timing and a charge supply section for applying bias charges to the signal charges to be transferred from the first to the second path. In the device, bias charges supplied to the first path is transferred to the second path. Signal charges are transferred to the first path and then to the second path. The signal and the bias charges both transferred to the second path are outputted.

Abstract: A charge transfer device of two-line read structure is formed with a first charge transfer path for transferring first-group charges, a second charge transfer path for transferring second-group charges, and a transfer gate portion (106). To complete the transfer operation of all the second-group charges outputted at a time, the transfer operation of the charges from the first transfer path to the second charge transfer path by the transfer gate portion is divided into a plurality of times. In addition, the second-group charges outputted at time are transferred for each divided set of pixels in each divided transfer operation.

Abstract: In the method of transferring charges generated by signal charge generating sections in response to light, a signal charge existing under some transfer electrode of the plural charge transfer sections arranged in parallel to each other is transferred through one of a plurality of connecting sections formed under the transfer electrode corresponding to another charge transfer section among the plural connecting sections formed between the plural charge transfer sections, on the basis of a predetermined drive pulse; and when the charge is transferred to the other charge transfer section, a charge remaining at the primary charge transfer section is transferred from the primary charge transfer section to the other charge transfer section, through the other connecting section among the plural connecting sections, to combine the remaining charge with the signal charge previously transferred.