Patents by Inventor Makoto MUKUNOKI

Makoto MUKUNOKI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220334152
    Abstract: A state estimation system for a power conversion semiconductor apparatus in an embodiment includes an analysis processing unit and an estimation processing unit. The analysis processing unit projects points indicating a combination of a voltage detection value in first time history data of a voltage between the pair of main terminals detected when the pair of main terminals are forward-biased and when the pair of main terminals are reverse-biased and a current detection value in second time history data of detection values of both a forward current and a reverse current between the pair of main terminals onto a coordinate plane including a voltage axis and a current axis on the basis of the first time history data and the second time history data in the power conversion semiconductor apparatus including the pair of main terminals and derives a distribution of the projected points on the coordinate plane.
    Type: Application
    Filed: August 28, 2020
    Publication date: October 20, 2022
    Applicants: TOSHIBA MITSUBISHI-ELECTRIC INDUSTRIAL SYSTEMS CORPORATION, KYUSHU INSTITUTE OF TECHNOLOGY
    Inventors: Haruyuki YAMAGUCHI, Makoto MUKUNOKI, Masahiko TSUKAKOSHI, Ichiro OMURA, Masanori TSUKUDA, Li GUAN, Kazuha WATANABE
  • Patent number: 10283478
    Abstract: To provide a pressure contact type semiconductor device stack which can uniformly pressurize pressure contact type semiconductor devices irrespective of presence or absence of a notch portion of the pressure contact type semiconductor device, and can prevent thermal destruction of the relevant pressure contact type semiconductor device.
    Type: Grant
    Filed: October 18, 2017
    Date of Patent: May 7, 2019
    Assignees: Toshiba Mitsubishi-Electric Industrial Systems Corporation, Toshiba Energy Systems & Solutions Corporation
    Inventors: Kenichiro Omote, Ryo Nakajima, Makoto Mukunoki, Daisuke Yoshizawa, Yuta Ichikura, Naotaka Iio
  • Publication number: 20180040581
    Abstract: To provide a pressure contact type semiconductor device stack which can uniformly pressurize pressure contact type semiconductor devices irrespective of presence or absence of a notch portion of the pressure contact type semiconductor device, and can prevent thermal destruction of the relevant pressure contact type semiconductor device.
    Type: Application
    Filed: October 18, 2017
    Publication date: February 8, 2018
    Applicants: Toshiba Mitsubishi-Electric Industrial Systems Corporation, Kabushiki Kaisha Toshiba
    Inventors: Kenichiro OMOTE, Ryo NAKAJIMA, Makoto MUKUNOKI, Daisuke YOSHIZAWA, Yuta ICHIKURA, Naotaka IIO