Abstract: A control device that controls discharge of a nonaqueous secondary battery in order that discharge electric power of the nonaqueous secondary battery does not exceed an upper limit value includes a current sensor and a controller. The controller calculates an evaluation value for evaluating a first deterioration component based on a discharge state detected by using the current sensor. The first deterioration component is a component that reduces output performance of the nonaqueous secondary battery due to an imbalance of ion concentrations in an electrolytic solution caused by discharging the nonaqueous secondary battery. The controller integrates a value obtained by subtracting a correction coefficient from a first integrated value obtained by integrating the evaluation values in past, which exceed a target value, and the evaluation value at present, which exceeds the target value, to calculate a second integrated value.

Abstract: A parallel computer system includes computing nodes to execute a parallel program for generating computing processes that perform computations and monitoring processes and forming a monitoring hierarchical structure, each monitoring process monitors a monitoring process and a computing process arranged immediately lower than the monitoring process, each of the computing nodes operating as the computing process when the computing process is allocated to the computing node and operating as the monitoring process when the monitoring process is allocated to the computing node.

Abstract: A PC executes a control process including the steps of: calculating an internal pressure increase amount P; calculating an internal pressure fluctuation amount ?P; calculating a deterioration evaluation value D1; calculating a deterioration evaluation value D2; determining that a battery can be shipped as a secondhand battery when D1+D2 is equal to or smaller than a threshold value A; and determining that the battery cannot be shipped as a secondhand battery when D1+D2 is larger than the threshold value A.

Abstract: A battery capacity estimation unit estimates a battery in battery capacity based on information regarding the battery's use history. A moisture intrusion estimation unit estimates an amount of moisture intruding into the battery. A battery capacity correction unit uses the estimated amount of intruding moisture to correct the estimated battery capacity.

Abstract: A light emitting device includes: a laminated body including a first-conductivity type semiconductor layer, a light emitting layer, and a second-conductivity type semiconductor layer in this order; a contact layer provided in contact with the second-conductivity type semiconductor layer at least at a peripheral edge of the second-conductivity type semiconductor layer; a first electrode electrically connected to the first-conductivity type semiconductor layer; a second electrode provided nearer to the first-conductivity type semiconductor layer than the second-conductivity type semiconductor layer; and a conductor electrically connecting the second electrode and the contact layer to each other.

Abstract: A control device that controls discharge of a nonaqueous secondary battery in order that discharge electric power of the nonaqueous secondary battery does not exceed an upper limit value includes a current sensor and a controller. The controller calculates an evaluation value for evaluating a first deterioration component based on a discharge state detected by using the current sensor. The first deterioration component is a component that reduces output performance of the nonaqueous secondary battery due to an imbalance of ion concentrations in an electrolytic solution caused by discharging the nonaqueous secondary battery. The controller integrates a value obtained by subtracting a correction coefficient from a first integrated value obtained by integrating the evaluation values in past, which exceed a target value, and the evaluation value at present, which exceeds the target value, to calculate a second integrated value.

Abstract: A laser diode capable of independently driving each ridge section, and inhibiting rotation of a polarization angle resulting from a stress applied to the ridge section without lowering reliability and a method of manufacturing the same are provided. A laser diode includes: three or more strip-like ridge sections in parallel with each other with a strip-like trench in between, including at least a lower cladding layer, an active layer, and an upper cladding layer in this order; an upper electrode on a top face of each ridge section, being electrically connected to the upper cladding layer; a wiring layer electrically connected to the upper electrode, in the air at least over the trench; and a pad electrode in a region different from regions of both the ridge section and the trench, being electrically connected to the upper electrode through the wiring layer.

Abstract: A laser diode includes: a plurality of strip-shaped laser structures arranged in parallel with each other, and including a lower cladding layer, an active layer, and an upper cladding layer in this order; a plurality of strip-shaped upper electrodes singly formed on a top face of the respective laser structures, and being electrically connected to the upper cladding layer; a plurality of wiring layers being at least singly and electrically connected to one of the respective upper electrodes; and a plurality of pad electrodes formed in a region different from that of the plurality of laser structures, and being electrically connected to one of the respective upper electrodes with the wiring layer in between. The respective wiring layers have an end in a region different from a region where the respective wiring layers are contacted with the upper electrode.

Abstract: The present invention provides a semiconductor laser device including: a plurality of light emitting sections arranged in strip shapes in parallel; a plurality of first electrodes arranged along top faces of the light emitting sections, respectively; an insulating film covering a whole surface of the plurality of first electrodes, and including contact apertures corresponding to the first electrodes, respectively; a plurality of second electrodes arranged in positions different from those of the plurality of light emitting sections, correspondingly to the first electrodes; a plurality of wiring layers arranged on the insulating layer, and electrically connecting the second electrodes and the corresponding first electrodes through the contact apertures, respectively; and a plurality of window regions arranged for the light emitting sections in the insulating film so as to expose the first electrodes, respectively, and including at least two window regions having areas different from each other.

Abstract: A lower supporting pin module 22 is given a shape having a contact surface 26a. On the occasion of position recognition for determining a position of a pin on the lower supporting pin module 22, an image of the lower supporting pin module 22 is captured, and the image is subjected to recognition processing, to thus detect an outer shape of an upper shaft 24B. Even when an extraneous matter on a downside surface of a substrate adheres to the contact surface 26a, the position of the lower supporting pin module 22 can be stably recognized with superior recognition precision.

Abstract: An electrode terminal 42 is connected to a current collector part 12 of electrodes through a deformation restricting member 3. Between laminate films 2 and 2, a space 15 is formed above and below the current collector part 12. The deformation restricting member 3 is placed close to the inner wall peripheral portion of an outer package including sealing parts 23, thereby forming a deformation-restricting part 22 to restrict the inward deformation of the laminated films 2. In a section extending from the inside end of the deformation restricting member 3 to a battery element 1, the laminated films 2 face the space 15 to allow the deformation of the laminated films 2 in response to the change of internal pressure. At the decrease of internal pressure, the contraction of the laminated films 2 can be localized in the deformation-allowing part 21, thereby reducing the bending stress on an end portion of the sealing parts 23.

Abstract: A laser diode capable of independently driving each ridge section, and inhibiting rotation of a polarization angle resulting from a stress applied to the ridge section without lowering reliability and a method of manufacturing the same are provided. A laser diode includes: three or more strip-like ridge sections in parallel with each other with a strip-like trench in between, including at least a lower cladding layer, an active layer, and an upper cladding layer in this order; an upper electrode on a top face of each ridge section, being electrically connected to the upper cladding layer; a wiring layer electrically connected to the upper electrode, in the air at least over the trench; and a pad electrode in a region different from regions of both the ridge section and the trench, being electrically connected to the upper electrode through the wiring layer.

Abstract: A laser diode capable of independently driving each ridge section, and inhibiting rotation of a polarization angle resulting from a stress applied to the ridge section without lowering reliability and a method of manufacturing the same are provided. A laser diode includes: three or more strip-like ridge sections in parallel with each other with a strip-like trench in between, including at least a lower cladding layer, an active layer, and an upper cladding layer in this order; an upper electrode on a top face of each ridge section, being electrically connected to the upper cladding layer; a wiring layer electrically connected to the upper electrode, in the air at least over the trench; and a pad electrode in a region different from regions of both the ridge section and the trench, being electrically connected to the upper electrode through the wiring layer.

Abstract: The semiconductor device of the present invention includes a semiconductor substrate, a plurality of floating gate electrodes formed in a memory cell forming region of the semiconductor substrate, a word line electrically connecting the floating gate electrodes and a conductor portion formed on the word line so as to reduce a resistance of the word line.

Abstract: The present invention provides a semiconductor laser device including: a plurality of light emitting sections arranged in strip shapes in parallel; a plurality of first electrodes arranged along top faces of the light emitting sections, respectively; an insulating film covering a whole surface of the plurality of first electrodes, and including contact apertures corresponding to the first electrodes, respectively; a plurality of second electrodes arranged in positions different from those of the plurality of light emitting sections, correspondingly to the first electrodes; a plurality of wiring layers arranged on the insulating layer, and electrically connecting the second electrodes and the corresponding first electrodes through the contact apertures, respectively; and a plurality of window regions arranged for the light emitting sections in the insulating film so as to expose the first electrodes, respectively, and including at least two window regions having areas different from each other.

Abstract: A laser diode includes: a plurality of strip-shaped laser structures arranged in parallel with each other, and including a lower cladding layer, an active layer, and an upper cladding layer in this order; a plurality of strip-shaped upper electrodes singly formed on a top face of the respective laser structures, and being electrically connected to the upper cladding layer; a plurality of wiring layers being at least singly and electrically connected to one of the respective upper electrodes; and a plurality of pad electrodes formed in a region different from that of the plurality of laser structures, and being electrically connected to one of the respective upper electrodes with the wiring layer in between. The respective wiring layers have an end in a region different from a region where the respective wiring layers are contacted with the upper electrode.

Abstract: In a navigation device, multi-layered menu windows are sequentially displayed in a display unit and narrowed down by repeatedly selecting an item in each menu window to thereby consequently display a certain instruction window for instructing an execution of a function. This selection procedure is stored such that a selection record, which indicates an association with the certain instruction window, is assigned to each of the selected items in the displayed menu windows. When a certain item assigned the selection record is operated more than a predetermined time period, the currently displayed menu window including the certain item is switched to the certain instruction window without intermediate menu windows displayed. Thus, when intending to display the certain instruction window, which was previously displayed after the selection procedure, a user can significantly simplify the selection procedure and decrease workloads.

Abstract: A laser diode capable of independently driving each ridge section, and inhibiting rotation of a polarization angle resulting from a stress applied to the ridge section without lowering reliability and a method of manufacturing the same are provided. A laser diode includes: three or more strip-like ridge sections in parallel with each other with a strip-like trench in between, including at least a lower cladding layer, an active layer, and an upper cladding layer in this order; an upper electrode on a top face of each ridge section, being electrically connected to the upper cladding layer; a wiring layer electrically connected to the upper electrode, in the air at least over the trench; and a pad electrode in a region different from regions of both the ridge section and the trench, being electrically connected to the upper electrode through the wiring layer.

Abstract: The semiconductor device of the present invention includes a semiconductor substrate, a plurality of floating gate electrodes formed in a memory cell forming region of the semiconductor substrate, a word line electrically connecting the floating gate electrodes and a conductor portion formed on the word line so as to reduce a resistance of the word line.

Abstract: The semiconductor device of the present invention includes a semiconductor substrate, a plurality of floating gate electrodes formed in a memory cell forming region of the semiconductor substrate, a word line electrically connecting the floating gate electrodes and a conductor portion formed on the word line so as to reduce a resistance of the word line.