Abstract: This invention relates to a method of efficiently producing a high-purity para-substituted aromatic hydrocarbon while suppressing caulking without requiring isomerization-adsorption separation steps, and more particularly to a method of producing a para-substituted aromatic hydrocarbon, characterized in that a methylating agent and an aromatic hydrocarbon are reacted in the presence of a catalyst formed by coating MFI type zeolite having a particle size of not more than 100 ?m with a crystalline silicate.

Abstract: This invention relates to a method of efficiently producing a high-purity para-substituted aromatic hydrocarbon while suppressing caulking without requiring isomerization-adsorption separation steps, and more particularly to a method of producing a para-substituted aromatic hydrocarbon, characterized in that a methylating agent and an aromatic hydrocarbon are reacted in the presence of a catalyst formed by coating MFI type zeolite having a particle size of not more than 100 ?m with a crystalline silicate.

Abstract: To reduce variation in channel lengths of MOS transistors within a circuit functional module. When exposure of a wafer substrate having a semiconductor integrated circuit device 1 including a plurality of CMOS circuit module regions CCM11 to CCM22 to be subject to substrate bias control formed in a core region 10 is performed using a step-and-scan type projection exposure apparatus, scanning is performed in the same direction as a longitudinal direction of the respective CMOS circuit module regions CCM11 to CCM22. In this device, a gate insulating film is formed on the substrate, a gate electrode material film is formed on the gate insulating film, and a photoresist film is formed on the gate electrode material film.

Abstract: To reduce variation in channel lengths of MOS transistors within a circuit functional module. When exposure of a wafer substrate having a semiconductor integrated circuit device 1 including a plurality of CMOS circuit module regions CCM11 to CCM22 to be subject to substrate bias control formed in a core region 10 is performed using a step-and-scan type projection exposure apparatus, scanning is performed in the same direction as a longitudinal direction of the respective CMOS circuit module regions CCM11 to CCM22. In this device, a gate insulating film is formed on the substrate, a gate electrode material film is formed on the gate insulating film, and a photoresist film is formed on the gate electrode material film.