Abstract: According to one embodiment, an antenna device includes: an antenna substrate which comprises on a front surface thereof a radiation element for transmitting/receiving radio waves; a dielectric layer which covers the front surface and a back surface of the antenna substrate; and a first conductive layer which covers a side surface of the antenna substrate.

Abstract: According to an embodiment, a wireless apparatus includes an interposer substrate, a semiconductor chip, a nonconductive layer, and a conductive film. The interposer substrate includes a conductive portion. The semiconductor chip is mounted on a component mounting face of the interposer substrate. The nonconductive layer is provided on the component mounting face to seal the chip. The conductive film is configured to cover a surface of the nonconductive layer and a side of the interposer substrate and is electrically connected to the conductive portion. The film has a first slot aperture. The conductive portion has a second slot aperture connecting to the first slot aperture. The first and second slot apertures serve as an integrated slot antenna. The antenna has first and second portions. The first portion includes a boundary between the first and second slot apertures and has a width larger than a width of the second portion.

Abstract: An ion implantation method includes: irradiating a wafer arranged to meet a predetermined plane channeling condition with an ion beam; measuring a predetermined characteristic on a surface of the wafer irradiated with the ion beam; and evaluating an implant angle distribution of the ion beam by using a result of measurement of the characteristic. The wafer may be arranged so as to include a channeling plane parallel to a predetermined reference plane parallel to a reference trajectory direction of the ion beam incident on the wafer and not to include a channeling plane perpendicular to the reference plane and parallel to the reference trajectory direction.

Abstract: An ion implantation method for scanning an ion beam reciprocally in an x direction and moving a wafer reciprocally in a y direction to implant ions into the wafer is provided. The method includes: irradiating a first wafer arranged to meet a predetermined plane channeling condition with the ion beam and measuring resistance of the first wafer irradiated with the ion beam; irradiating a second wafer arranged to meet a predetermined axial channeling condition with the ion beam and measuring resistance of the second wafer irradiated with the ion beam; and adjusting an implant angle distribution of the ion beam by using results of measuring the resistance of the first and second wafers.

Abstract: In a glass substrate for extracting therefrom a plurality of cover glasses to protect a protection object, plural concave portions are provided in a front surface or back surface of the glass substrate. The glass substrate includes plural thin portions formed by providing the plural concave portions and a thick portion connecting to the thin portion, and a haze value of the thin portion is 8% or less.

Abstract: An ion implanter includes: a beam deflector that deflects an ion beam passing through a previous stage beam path and outputs the beam to pass through a subsequent stage beam path toward a wafer; a beam filter slit that partially shields the beam traveling through the subsequent stage beam path and allows passage of a beam component having a predetermined trajectory toward the wafer; a dose cup that is disposed between the beam deflector and the beam filter slit and measures a part of the beam exiting from the beam deflector as a beam current; and a trajectory limiting mechanism that is disposed between the beam deflector and the dose cup and prevents a beam component having a trajectory deviated from the predetermined trajectory from being incident to a measurement region of the dose cup.

Abstract: A cover member that protects at least one protection object includes a thin portion and a thick portion. The thin portion is formed by providing a concave portion on a back surface of the cover member. The thick portion is connected to the thin portion. A front surface of the thick portion is planar and a front surface of the thin portion is curved.

Abstract: A high-energy ion implanter includes: a beam generation unit that includes an ion source and a mass spectrometer; a radio frequency multi-stage linear acceleration unit; a deflection unit that includes a magnetic field type energy analysis device for filtering ions by a momentum; a beam transportation line unit; and a substrate processing/supplying unit. In this apparatus, an electric field type final energy filter that deflects a high-energy scan beam in the vertical direction by an electric field is inserted between the electric field type beam collimator and the wafer in addition to the magnetic field type mass spectrometer and the magnetic field type energy analysis device as momentum filters and the radio frequency multi-stage linear acceleration unit as a velocity filter.

Abstract: An ion implanter includes: a beam deflector that deflects an ion beam passing through a previous stage beam path and outputs the beam to pass through a subsequent stage beam path toward a wafer; a beam filter slit that partially shields the beam traveling through the subsequent stage beam path and allows passage of a beam component having a predetermined trajectory toward the wafer; a dose cup that is disposed between the beam deflector and the beam filter slit and measures a part of the beam exiting from the beam deflector as a beam current; and a trajectory limiting mechanism that is disposed between the beam deflector and the dose cup and prevents a beam component having a trajectory deviated from the predetermined trajectory from being incident to a measurement region of the dose cup.

Abstract: A defrost system is disclosed that includes a cooling device disposed in a freezer, a heat exchanger pipe leading into a casing, a drain receiver unit; a refrigerating device for cooling and liquefying CO2 refrigerant; a refrigerant circuit for permitting the CO2 refrigerant to circulate to the heat exchanger pipe; a defrost circuit branched from the heat exchanger pipe forming a CO2 circulation path with the heat exchanger pipe; an on-off valve so that the CO2 circulation path becomes a closed circuit; a pressure adjusting unit for adjusting the pressure of the CO2 refrigerant; and a first heat exchanger unit for heating the CO2 refrigerant circulating with brine, disposed below the cooling device to which the defrost circuit and a first brine circuit in which brine, a first heating medium, circulates, are led, in which the CO2 refrigerant naturally circulates in the closed circuit when defrosting by a thermosiphon effect.

Abstract: An image forming apparatus includes an accepting unit, and a controller. The accepting unit accepts an instruction to execute an image forming process. The controller controls the accepting unit so as to prohibit the accepting unit from accepting an instruction to collectively execute multiple image forming processes when a billing device is usable which bills a user for execution of an image forming process and which is incapable of acquiring user identification information for identifying a user.

Abstract: A high-energy ion implanter includes: a beam generation unit that includes an ion source and a mass spectrometer; a radio frequency multi-stage linear acceleration unit; a deflection unit that includes a magnetic field type energy analysis device for filtering ions by a momentum; a beam transportation line unit; and a substrate processing/supplying unit. In this apparatus, an electric field type final energy filter that deflects a high-energy scan beam in the vertical direction by an electric field is inserted between the electric field type beam collimator and the wafer in addition to the magnetic field type mass spectrometer and the magnetic field type energy analysis device as momentum filters and the radio frequency multi-stage linear acceleration unit as a velocity filter.

Abstract: An image forming apparatus includes an accepting unit, and a controller. The accepting unit accepts an instruction to execute an image forming process. The controller controls the accepting unit so as to prohibit the accepting unit from accepting an instruction to collectively execute multiple image forming processes when a billing device is usable which bills a user for execution of an image forming process and which is incapable of acquiring user identification information for identifying a user.

Abstract: Glass comprising, as represented by mole percentage based on the following oxides, from 50 to 75% of SiO2, from 1 to 15% of Al2O3, from 6 to 21% of Na2O, from 0 to 15% of K2O, from 0 to 15% of MgO, from 0 to 20% of CaO, from 0 to 21% of ?RO (wherein R is Mg, Ca, Sr, Ba and/or Zn), from 0 to 5% of ZrO2, from 1.5 to 6% of Fe2O3, and from 0.1 to 1% of Co3O4.

Abstract: An image processing system includes: a receiving section that receives print information including at least a first printing control command embedded in a print document and a second printing control command relating to a setting condition for the first printing control command; a control command extracting section that extracts the first printing control command and the second printing control command from the print information; and a print executing section that performs the first printing control command according to the setting condition of the second printing control command.

Abstract: Glass comprising, as represented by mole percentage based on the following oxides, from 50 to 75% of SiO2, from 1 to 15% of Al2O3, from 6 to 21% of Na2O, from 0 to 15% of K2O, from 0 to 15% of MgO, from 0 to 20% of CaO, from 0 to 21% of ?RO (wherein R is Mg, Ca, Sr, Ba and/or Zn), from 0 to 5% of ZrO2, from 1.5 to 6% of Fe2O3, and from 0.1 to 1% of Co3O4.

Abstract: An image processing system includes: a receiving section that receives print information including at least a first printing control command embedded in a print document and a second printing control command relating to a setting condition for the first printing control command; a control command extracting section that extracts the first printing control command and the second printing control command from the print information; and a print executing section that performs the first printing control command according to the setting condition of the second printing control command.

Abstract: A charge compensation device according to this invention is for suppressing charging of a wafer when the wafer is irradiated with a beam from a beam generation source unit. The charge compensation device comprises at least one first arc chamber having at least one first extraction hole and a second arc chamber having at least one second extraction hole faced on the reciprocal swinging beam of the predetermined scan range. A first arc voltage is applied to the first arc chamber to generate first plasma in the first arc chamber. The generated first plasma is extracted from the first arc chamber and introduced into the second arc chamber. Second plasma is produced in the second arc chamber, and second extracted plasma from the second arc chamber forms a plasma bridge between the second extraction hole and the reciprocal swinging beam.

Abstract: When print data PD generated by applications 100 is supplied to a graphics library 110 in an order of describing objects, the graphics library 110 makes correspond print data PD to objects so as to store print data PD in a metafile 120. After print data for one page has been stored in the metafile 120, the metafile 120 is retrieved. Thus, print data PD is reconstructed for each band. A printer driver 130 converts reconstructed print data PD into the PDL data PD? so as to transfer the PDL data PD? to an output apparatus 2. A decomposer 140 does not generate intermediate format data and directly develops the PDL data PD? in a band buffer 22. An output device 24 reads raster data RD from the band buffer 22 so as to print an image on a paper sheet.

Abstract: A charge compensation device according to this invention is for suppressing charging of a wafer when the wafer is irradiated with a beam from a beam generation source unit. The charge compensation device comprises at least one first arc chamber having at least one first extraction hole and a second arc chamber having at least one second extraction hole faced on the reciprocal swinging beam of the predetermined scan range. A first arc voltage is applied to the first arc chamber to generate first plasma in the first arc chamber. The generated first plasma is extracted from the first arc chamber and introduced into the second arc chamber. Second plasma is produced in the second arc chamber, and second extracted plasma from the second arc chamber forms a plasma bridge between the second extraction hole and the reciprocal swinging beam.