Abstract: A laminated resin film includes: a resin layer; and a Cu film provided on one surface or both surfaces of the resin layer, in which in the Cu film, a peak intensity y of a (200) plane is 2 to 30 when a peak intensity of a (111) plane in X-ray diffraction measurement is set to 100, and Expression (1) is satisfied. y?2.5×?7.5??Expression (1) (in Expression (1), y is the peak intensity of the (200) plane when the peak intensity of the (111) plane in the X-ray diffraction measurement is set to 100, and x is a peak intensity of a (220) plane when the peak intensity of the (111) plane in the X-ray diffraction measurement is set to 100.

Abstract: To obtain an imaging device that can improve temperature detection accuracy. An imaging device of the present disclosure includes a processing unit formed on a first semiconductor substrate and capable of performing predetermined image processing on the basis of image data obtained by an imaging unit, a temperature sensor formed on the first semiconductor substrate and capable of generating a detection signal according to a temperature, and a first pad electrode formed on the first semiconductor substrate and electrically insulated from a circuit formed on the first semiconductor substrate.

Abstract: There is provided a straddle-type vehicle including: a head pipe; a steering stem rotatably supported in the head pipe; a front fork; an upper bracket connecting an upper end portion of the front fork to the steering stem; a lower bracket located below the upper bracket and connecting an upper portion of the front fork to the steering stem; a front wheel supported by a lower end portion of the front fork; a front fender covering the front wheel from above; a front cowl covering an upper front portion of the straddle-type vehicle; a shroud located above the front fender and covering a lower portion of the front cowl; and a lower bracket cover located above the front fender and covering the lower bracket from below. The shroud has an opening through which the front fork passes. The lower bracket cover is provided below the opening.

Abstract: There is provided a sensor attachment structure for a straddle-type vehicle including: a sensor unit including a sensor configured to detect a state of a tire; and a fender formed along an outer surface shape of an upper portion of the tire. The sensor unit is attached to a rear portion of the fender and faces the tire.

Abstract: Provided is a method for industrially producing a triazolidinedione compound at a high purity and a high yield. A precipitation step for preparing a solution that contains a triazolidinedione compound represented by formula (1) and precipitating the triazolidinedione compound therefrom is performed. In this step, the pH of the solution is adjusted to 3.0 to 8.5 and the solution is prepared so as to contain 3-15 parts by volume of solvents for 1 part by mass of the triazolidinedione compound. (In the formula, R1 is a substituted or unsubstituted amino group-bearing organic group.

Abstract: Provided is a method for producing a high-purity, high-quality semicarbazide compound at a high yield by a simple method. The semicarbazide compound is recrystallized by a solvent containing a halogenated hydrocarbon. Dichloromethane is preferred as the halogenated hydrocarbon.

Abstract: Provided is a method for industrially producing a triazolidinedione compound at a high purity and a high yield. A precipitation step for preparing a solution that contains a triazolidinedione compound represented by formula (1) and precipitating the triazolidinedione compound therefrom is performed. In this step, the pH of the solution is adjusted to 3.0 to 8.5 and the solution is prepared so as to contain 3-15 parts by volume of solvents for 1 part by mass of the triazolidinedione compound. (In the formula, R1 is a substituted or unsubstituted amino group-bearing organic group.

Abstract: To obtain an imaging device that can improve temperature detection accuracy. An imaging device of the present disclosure includes a processing unit formed on a first semiconductor substrate and capable of performing predetermined image processing on the basis of image data obtained by an imaging unit, a temperature sensor formed on the first semiconductor substrate and capable of generating a detection signal according to a temperature, and a first pad electrode formed on the first semiconductor substrate and electrically insulated from a circuit formed on the first semiconductor substrate.

Abstract: Provided is a method for producing a high-purity, high-quality semicarbazide compound at a high yield by a simple method. The semicarbazide compound is recrystallized by a solvent containing a halogenated hydrocarbon. Dichloromethane is preferred as the halogenated hydrocarbon.

Abstract: There is disclosed a method for manufacturing a semiconductor device comprising a semiconductor chip having a connection portion and a wiring circuit board having a connection portion, the respective connection portions being electrically connected to each other, or a semiconductor device comprising a plurality of semiconductor chips having connection portions, the respective connection portions being electrically connected to each other. The connection portions consist of metal.

Abstract: A radiation imaging apparatus provided with a detector capable of improving correction accuracy at a high counting rate. The present invention is provided with: grids that remove scattered beams that emanate from an object; and a plurality of detector sub-pixels arranged so as to divide the gap between the grids into three or more segments, wherein the area of each of the detector sub-pixels located below the wall surface of the grids is larger than that of each of the other detector sub-pixels in a planar view. The size of each of the detector sub-pixels not located below the wall surface of the grids is expressed as (Pg?Tg?Lsplit×2)/N, where Pg represents the pitch between the grids, Tg represents the thickness of each of the grids, and N represents the number of segments formed by the detector sub-pixels between the grids.

Abstract: There is disclosed a method for manufacturing a semiconductor device comprising a semiconductor chip having a connection portion and a wiring circuit board having a connection portion, the respective connection portions being electrically connected to each other, or a semiconductor device comprising a plurality of semiconductor chips having connection portions, the respective connection portions being electrically connected to each other. The connection portions consist of metal.

Abstract: A semiconductor adhesive used for sealing connection portions of a semiconductor device, wherein: in the semiconductor device, the connection portion of a semiconductor chip and the connection portion of a wiring circuit substrate are electrically connected to each other or the connection portions of a plurality of semiconductor chips are electrically connected to each other; the semiconductor adhesive comprises a (meth)acrylic compound and a curing agent; and when the semiconductor adhesive is kept at 200° C. for 5 seconds, a curing reaction rate thereof is 80% or more.

Abstract: A radiation imaging apparatus provided with a detector capable of improving correction accuracy at a high counting rate. The present invention is provided with: grids that remove scattered beams that emanate from an object; and a plurality of detector sub-pixels arranged so as to divide the gap between the grids into three or more segments, wherein the area of each of the detector sub-pixels located below the wall surface of the grids is larger than that of each of the other detector sub-pixels in a planar view. The size of each of the detector sub-pixels not located below the wall surface of the grids is expressed as (Pg?Tg?Lsplit×2)/N, where Pg represents the pitch between the grids, Tg represents the thickness of each of the grids, and N represents the number of segments formed by the detector sub-pixels between the grids.

Abstract: A semiconductor adhesive used for sealing connection portions of a semiconductor device, wherein: in the semiconductor device, the connection portion of a semiconductor chip and the connection portion of a wiring circuit substrate are electrically connected to each other or the connection portions of a plurality of semiconductor chips are electrically connected to each other; the semiconductor adhesive comprises a (meth)acrylic compound and a curing agent; and when the semiconductor adhesive is kept at 200° C. for 5 seconds, a curing reaction rate thereof is 80% or more.

Abstract: An adhesive for a semiconductor, comprising an epoxy resin, a curing agent, and a compound having a group represented by the following formula (1): wherein R1 represents an electron-donating group.

Abstract: A manufacturing method for a semiconductor device in which connection portions of a semiconductor chip are electrically connected to connection portions of a wiring circuit substrate or a semiconductor device in which connection portions of a plurality of semiconductor chips are electrically connected to each other, the method comprising a step of sealing at least part of the connection portions with an adhesive for a semiconductor comprising a compound having a group represented by the following formula (1): wherein R1 represents an electron-donating group.

Abstract: A manufacturing method for a semiconductor device in which connection portions of a semiconductor chip are electrically connected to connection portions of a wiring circuit substrate or a semiconductor device in which connection portions of a plurality of semiconductor chips are electrically connected to each other, the method comprising a step of sealing at least part of the connection portions with an adhesive for a semiconductor comprising a compound having a group represented by the following formula (1): wherein R1 represents an electron-donating group.

Abstract: An adhesive for a semiconductor, comprising an epoxy resin, a curing agent, and a compound having a group represented by the following formula (1): wherein R1 represents an electron-donating group.

Abstract: An adhesive for a semiconductor, containing an epoxy resin, a curing agent, and a fluxing agent comprising a compound having a group represented by the following formula (1-1) or (1-2): wherein R1 represents an electron-donating group; and a plurality of R1 may be identical or different from each other.