Patents by Inventor Makoto Sawamura

Makoto Sawamura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11539343
    Abstract: An acoustic wave device includes a silicon support substrate that includes first and second main surfaces opposing each other, a piezoelectric structure provided on the first main surface and including the piezoelectric layer, an IDT electrode provided on the piezoelectric layer, a support layer provided on the first main surface of the silicon support substrate and surrounding the piezoelectric layer, a cover layer provided on the support layer, a through-via electrode that extending through the silicon support substrate and the piezoelectric structure, and a first wiring electrode connected to the through-via electrode and electrically connected to the IDT electrode. The piezoelectric structure includes at least one layer having an insulating property, the at least one layer including the piezoelectric layer. The first wiring electrode is provided on the layer having an insulating property in the piezoelectric structure.
    Type: Grant
    Filed: June 19, 2020
    Date of Patent: December 27, 2022
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Yuzo Kishi, Yutaka Kishimoto, Makoto Sawamura, Seiji Kai
  • Patent number: 11245380
    Abstract: In an acoustic wave device, a piezoelectric body is directly or indirectly laminated on a silicon support substrate, and a functional electrode is provided on the piezoelectric body. A support layer is directly or indirectly laminated on the silicon support substrate, and the support layer is located outside the functional electrode when viewed in plan view. A silicon cover layer is provided on the support layer that includes an insulating material, and a space A is defined by the silicon support substrate, the support layer, and the silicon cover layer. The electric resistance of the silicon support substrate is higher than the electric resistance of the silicon cover layer.
    Type: Grant
    Filed: June 19, 2020
    Date of Patent: February 8, 2022
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Makoto Sawamura, Seiji Kai, Yutaka Kishimoto, Yuzo Kishi
  • Publication number: 20220002142
    Abstract: A cavity SOI substrate that includes a first silicon substrate having a cavity; a second silicon substrate bonded to the first silicon substrate, wherein the second silicon substrate includes a first portion oppositely aligned with the cavity of the first silicon substrate and that is thicker than a second portion of the second silicon substrate that is bonded to the first silicon substrate; and a silicon oxide film interposed between the first silicon substrate and the second silicon substrate.
    Type: Application
    Filed: September 22, 2021
    Publication date: January 6, 2022
    Inventors: Makoto Sawamura, Ryunosuke Hino, Yutaka Kishimoto
  • Publication number: 20200321938
    Abstract: In an acoustic wave device, a piezoelectric body is directly or indirectly laminated on a silicon support substrate, and a functional electrode is provided on the piezoelectric body. A support layer is directly or indirectly laminated on the silicon support substrate, and the support layer is located outside the functional electrode when viewed in plan view. A silicon cover layer is provided on the support layer that includes an insulating material, and a space A is defined by the silicon support substrate, the support layer, and the silicon cover layer. The electric resistance of the silicon support substrate is higher than the electric resistance of the silicon cover layer.
    Type: Application
    Filed: June 19, 2020
    Publication date: October 8, 2020
    Inventors: Makoto SAWAMURA, Seiji KAI, Yutaka KISHIMOTO, Yuzo KISHI
  • Publication number: 20200321937
    Abstract: An acoustic wave device includes a silicon support substrate that includes first and second main surfaces opposing each other, a piezoelectric structure provided on the first main surface and including the piezoelectric layer, an IDT electrode provided on the piezoelectric layer, a support layer provided on the first main surface of the silicon support substrate and surrounding the piezoelectric layer, a cover layer provided on the support layer, a through-via electrode that extending through the silicon support substrate and the piezoelectric structure, and a first wiring electrode connected to the through-via electrode and electrically connected to the IDT electrode. The piezoelectric structure includes at least one layer having an insulating property, the at least one layer including the piezoelectric layer. The first wiring electrode is provided on the layer having an insulating property in the piezoelectric structure.
    Type: Application
    Filed: June 19, 2020
    Publication date: October 8, 2020
    Inventors: Yuzo KISHI, Yutaka KISHIMOTO, Makoto SAWAMURA, Seiji KAI
  • Publication number: 20200321933
    Abstract: An acoustic wave device includes a piezoelectric substrate including a support substrate and a piezoelectric layer on the support substrate, the piezoelectric substrate including a first principal surface on the piezoelectric layer side, and a second principal surface on the support substrate side, an IDT electrode on the first principal surface, a support layer on the support substrate, a cover on the support layer, a through-via electrode provided through the support substrate and electrically connected to the IDT electrode, a first wiring electrode on the second principal surface of the piezoelectric substrate and electrically connected to the through-via electrode, and a protective film on the second principal surface to cover at least a portion of the first wiring electrode. The protective film is provided on an inner side of the support layer when viewed in a direction normal or substantially normal to the second principal surface.
    Type: Application
    Filed: June 19, 2020
    Publication date: October 8, 2020
    Inventors: Yutaka KISHIMOTO, Seiji KAI, Makoto SAWAMURA, Yuzo KISHI
  • Publication number: 20190312559
    Abstract: An elastic wave device manufacturing method includes a preparing a piezoelectric wafer on which IDT electrodes are provided in elastic wave device forming portions, providing on a first main surface of the piezoelectric wafer support layers in the elastic wave device forming portions, bonding a cover member to cover the support layers to obtain a multilayer body, cutting the multilayer body in a first direction multiple times, cutting the multilayer body in a second direction orthogonal to the first direction to obtain elastic wave devices, in which a resin layer extends across a boundary between the elastic wave device forming portions adjacent to each other on the first main surface of the piezoelectric wafer, and the second cutting step is performed in a state in which the resin layer is present.
    Type: Application
    Filed: June 20, 2019
    Publication date: October 10, 2019
    Inventors: Makoto SAWAMURA, Seiji KAI
  • Patent number: 9911902
    Abstract: A semiconductor light-emitting device includes a first conductivity-type semiconductor including a first electrode on a first main surface, a second conductivity-type semiconductor, and an active layer between a second main surface of the first conductivity-type semiconductor and a first main surface of the second conductivity-type semiconductor. Protrusions are disposed in at least part of a region of a second main surface of the second conductivity-type semiconductor facing the first electrode. A second electrode is disposed in at least part of a region of the second main surface of the second conductivity-type semiconductor except the region having the protrusions. The protrusions containing a dielectric material protrude from the second main surface of the second conductivity-type semiconductor in a direction away from the active layer and are separated by intervals longer than the wavelength of light emitted from the active layer in the medium of the protrusions.
    Type: Grant
    Filed: December 12, 2016
    Date of Patent: March 6, 2018
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Makoto Sawamura, Shuhichiroh Yamamoto, Shigetoshi Ito
  • Publication number: 20170179342
    Abstract: A semiconductor light-emitting device includes a first conductivity-type semiconductor including a first electrode on a first main surface, a second conductivity-type semiconductor, and an active layer between a second main surface of the first conductivity-type semiconductor and a first main surface of the second conductivity-type semiconductor. Protrusions are disposed in at least part of a region of a second main surface of the second conductivity-type semiconductor facing the first electrode. A second electrode is disposed in at least part of a region of the second main surface of the second conductivity-type semiconductor except the region having the protrusions. The protrusions containing a dielectric material protrude from the second main surface of the second conductivity-type semiconductor in a direction away from the active layer and are separated by intervals longer than the wavelength of light emitted from the active layer in the medium of the protrusions.
    Type: Application
    Filed: December 12, 2016
    Publication date: June 22, 2017
    Inventors: Makoto SAWAMURA, Shuhichiroh YAMAMOTO, Shigetoshi ITO
  • Patent number: 8806923
    Abstract: A sensor for detecting material to be tested 100 having small variations in electrochemical measurement values includes a work electrode 1 and a counter electrode 2 integrated into one via an insulator 3. As a result of contact between the material to be tested and the work electrode 1, output voltage changes. The work electrode 1 smaller than the counter electrode 2 and the insulator 3 is installed on a part of the surface of the insulator 3, and a peripheral wall 4 for surrounding the work electrode 1 is formed on the insulator 3 to operate as a storage part.
    Type: Grant
    Filed: March 26, 2010
    Date of Patent: August 19, 2014
    Assignee: National Institute for Materials Science
    Inventor: Makoto Sawamura
  • Patent number: 8212467
    Abstract: A light emitting device includes a light emitting element, a cap sealing the light emitting element, and a light conversion structural section covering an upper surface of the cap. The cap includes a base section having a hole for taking out light emitted from the light emitting element, and a glass section overlaid on the hole. The glass section is provided outside the base section, and the light conversion structural section is provided outside the glass section. According to this light emitting device, manufacturing cost can be reduced by suppressing reduction in yield.
    Type: Grant
    Filed: May 25, 2009
    Date of Patent: July 3, 2012
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Makoto Sawamura, Shigetoshi Ito, Shuichi Hirukawa
  • Publication number: 20120137797
    Abstract: A sensor for detecting material to be tested 100 having small variations in electrochemical measurement values includes a work electrode 1 and a counter electrode 2 integrated into one via an insulator 3. As a result of contact between the material to be tested and the work electrode 1, output voltage changes. The work electrode 1 smaller than the counter electrode 2 and the insulator 3 is installed on a part of the surface of the insulator 3, and a peripheral wall 4 for surrounding the work electrode 1 is formed on the insulator 3 to operate as a storage part.
    Type: Application
    Filed: March 26, 2010
    Publication date: June 7, 2012
    Applicant: NAT'L INSTITUTE FOR MATERIALS SCIENCE
    Inventor: Makoto Sawamura
  • Patent number: 8072008
    Abstract: A high-sensitivity field effect transistor using as a channel ultrafine fiber elements such as carbon nanotube, and a biosensor using it. The field effect transistor comprises a substrate, a source electrode and a drain electrode arranged on the substrate, a channel for electrically connecting the source electrode with the drain electrode, and a gate electrode causing polarization due to the movement of free electrons in the substrate. For example, the substrate has a support substrate consisting of semiconductor or metal, a first insulating film formed on a first surface of the support substrate, and a second insulating film formed on a second surface of the support substrate, the source electrode, the drain electrode, and the channel arranged on the first insulating film, the gate electrode disposed on the second insulating film.
    Type: Grant
    Filed: December 13, 2007
    Date of Patent: December 6, 2011
    Assignees: Mitsumi Electric Co., Ltd., Semicon Craft Technologies
    Inventors: Koichi Mukasa, Kazuhisa Sueoka, Seiji Takeda, Satoshi Hattori, Yoshiki Yamada, Makoto Sawamura, Hiroichi Ozaki, Atsushi Ishii, Motonori Nakamura, Hirotaka Hosoi
  • Publication number: 20110183438
    Abstract: A single-electron transistor comprising at least a substrate, a source electrode and a drain electrode formed on top of the substrate opposing to each other, and a channel arranged between the source electrode is disclosed wherein the channel is composed of ultra fine fibers. By having such a constitution, a sensor can have excellent sensitivity.
    Type: Application
    Filed: April 6, 2011
    Publication date: July 28, 2011
    Applicants: Japan Science and Technology Agency, National Institute of Advanced Industrial Science and Technology
    Inventors: Kazuhiko MATSUMOTO, Koichi Mukasa, Atsushi Ishii, Seiji Takeda, Makoto Sawamura, Agus Subagyo, Hirotaka Hosoi, Kazuhisa Sueoka, Hiroshi Kida, Yoshihiro Sakoda
  • Publication number: 20110180427
    Abstract: A single-electron transistor comprising at least a substrate, a source electrode and a drain electrode formed on top of the substrate opposing to each other, and a channel arranged between the source electrode is disclosed wherein the channel is composed of ultra fine fibers. By having such a constitution, a sensor can have excellent sensitivity.
    Type: Application
    Filed: April 6, 2011
    Publication date: July 28, 2011
    Applicants: Japan Science and Technology Agency, National Institute of Advanced Industrial Science and Technology
    Inventors: Kazuhiko MATSUMOTO, Koichi Mukasa, Atsushi Ishii, Seiji Takeda, Makoto Sawamura, Agus Subagyo, Hirotaka Hosoi, Kazuhisa Sueoka, Hiroshi Kida, Yoshihiro Sakoda
  • Patent number: 7935989
    Abstract: A single-electron transistor comprising at least a substrate, a source electrode and a drain electrode formed on top of the substrate opposing to each other, and a channel arranged between the source electrode is disclosed wherein the channel is composed of ultra fine fibers. By having such a constitution, a sensor can have excellent sensitivity.
    Type: Grant
    Filed: May 21, 2004
    Date of Patent: May 3, 2011
    Assignees: Japan Science and Technology Agency, National Institute of Advanced Industrial Science and Technology
    Inventors: Kazuhiko Matsumoto, Koichi Mukasa, Atsushi Ishii, Seiji Takeda, Makoto Sawamura, Agus Subagyo, Hirotaka Hosoi, Kazuhisa Sueoka, Hiroshi Kida, Yoshihiro Sakoda
  • Publication number: 20110068679
    Abstract: Provided is a light emitting device of which manufacturing cost can be reduced by suppressing reduction in yield. The present invention relates to a light emitting device including a light emitting element (11), a cap (20) sealing the light emitting element (11), and a light conversion structural section (16) covering an upper surface of the cap (20), wherein the cap (20) includes a base section (14) having a hole for taking out light emitted from the light emitting element (11), and a glass section (15) overlaid on the hole, the glass section (15) is provided outside the base section (14), and the light conversion structural section (16) is provided outside the glass section (15).
    Type: Application
    Filed: May 25, 2009
    Publication date: March 24, 2011
    Applicant: Sharp Kabushiki Kaisha
    Inventors: Makoto Sawamura, Shigetoshi Ito, Shuichi Hirukawa
  • Publication number: 20100032653
    Abstract: This invention provides a process for producing a carbon nanotube electric field effect transistor that can improve yield in channel preparation. Carbon nanotubes dispersed in a mixed acid composed of sulfuric acid and nitric acid are subjected to radical treatment with aqueous hydrogen peroxide to cut the carbon nanotubes and thus to provide carboxyl-introduced carbon nanotube fragments. The carbon nanotube fragments are attached, through a covalent bond and/or an electrostatic bond, to a site, where a source electrode is to be formed, and a site where a drain electrode is to be formed, in a substrate with a functional group, to be attached to a carboxyl group, introduced thereinto. The carbon nanotube fragments attached to the substrate are attached to carbon nanotubes as channels through n-n interaction to fix the carbon nanotubes as channels to the substrate.
    Type: Application
    Filed: March 28, 2007
    Publication date: February 11, 2010
    Applicant: National University Corpration Hokkaido University
    Inventors: Seiji Takeda, Koichi Mukasa, Atsushi Ishii, Hiroichi Ozaki, Makoto Sawamura, Hirotaka Hosoi, Satoshi Hattori, Yoshiki Yamada, Kazuhisa Sueoka
  • Publication number: 20080283875
    Abstract: A high-sensitivity field effect transistor using as a channel ultrafine fiber elements such as carbon nanotube, and a biosensor using it. The field effect transistor comprises a substrate, a source electrode and a drain electrode arranged on the substrate, a channel for electrically connecting the source electrode with the drain electrode, and a gate electrode causing polarization due to the movement of free electrons in the substrate. For example, the substrate has a support substrate consisting of semiconductor or metal, a first insulating film formed on a first surface of the support substrate, and a second insulating film formed on a second surface of the support substrate, the source electrode, the drain electrode, and the channel arranged on the first insulating film, the gate electrode disposed on the second insulating film.
    Type: Application
    Filed: December 13, 2007
    Publication date: November 20, 2008
    Applicants: MITSUMI ELECTRIC CO., LTD., Semicon Craft Technologies
    Inventors: Koichi MUKASA, Kazuhisa SUEOKA, Seiji TAKEDA, Satoshi HATTORI, Yoshiki YAMADA, Makoto SAWAMURA, Hiroichi OZAKI, Atsushi ISHII, Motonori NAKAMURA, Hirotaka HOSOI
  • Publication number: 20060273356
    Abstract: A single-electron transistor comprising at least a substrate, a source electrode and a drain electrode formed on top of the substrate opposing to each other, and a channel arranged between the source electrode is disclosed wherein the channel is composed of ultra fine fibers. By having such a constitution, a sensor can have excellent sensitivity.
    Type: Application
    Filed: May 21, 2004
    Publication date: December 7, 2006
    Applicants: JAPAN SCIENCE AND TECHNOLOGY AGENCY, NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE
    Inventors: Kazuhiko Matsumoto, Koichi Mukasa, Atsushi Ishii, Seiji Takeda, Makoto Sawamura, Agus Subagyo, Hirotaka Hosoi, Kazuhisa Sueoka, Hiroshi Kida, Yoshihiro Sakoda