Patents by Inventor Makoto Sawamura
Makoto Sawamura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11626851Abstract: An acoustic wave device includes a piezoelectric substrate including a support substrate and a piezoelectric layer on the support substrate, the piezoelectric substrate including a first principal surface on the piezoelectric layer side, and a second principal surface on the support substrate side, an IDT electrode on the first principal surface, a support layer on the support substrate, a cover on the support layer, a through-via electrode provided through the support substrate and electrically connected to the IDT electrode, a first wiring electrode on the second principal surface of the piezoelectric substrate and electrically connected to the through-via electrode, and a protective film on the second principal surface to cover at least a portion of the first wiring electrode. The protective film is provided on an inner side of the support layer when viewed in a direction normal or substantially normal to the second principal surface.Type: GrantFiled: June 19, 2020Date of Patent: April 11, 2023Assignee: MURATA MANUFACTURING CO., LTD.Inventors: Yutaka Kishimoto, Seiji Kai, Makoto Sawamura, Yuzo Kishi
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Patent number: 11588460Abstract: An elastic wave device manufacturing method includes a preparing a piezoelectric wafer on which IDT electrodes are provided in elastic wave device forming portions, providing on a first main surface of the piezoelectric wafer support layers in the elastic wave device forming portions, bonding a cover member to cover the support layers to obtain a multilayer body, cutting the multilayer body in a first direction multiple times, cutting the multilayer body in a second direction orthogonal to the first direction to obtain elastic wave devices, in which a resin layer extends across a boundary between the elastic wave device forming portions adjacent to each other on the first main surface of the piezoelectric wafer, and the second cutting step is performed in a state in which the resin layer is present.Type: GrantFiled: June 20, 2019Date of Patent: February 21, 2023Assignee: MURATA MANUFACTURING CO., LTD.Inventors: Makoto Sawamura, Seiji Kai
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Patent number: 11539343Abstract: An acoustic wave device includes a silicon support substrate that includes first and second main surfaces opposing each other, a piezoelectric structure provided on the first main surface and including the piezoelectric layer, an IDT electrode provided on the piezoelectric layer, a support layer provided on the first main surface of the silicon support substrate and surrounding the piezoelectric layer, a cover layer provided on the support layer, a through-via electrode that extending through the silicon support substrate and the piezoelectric structure, and a first wiring electrode connected to the through-via electrode and electrically connected to the IDT electrode. The piezoelectric structure includes at least one layer having an insulating property, the at least one layer including the piezoelectric layer. The first wiring electrode is provided on the layer having an insulating property in the piezoelectric structure.Type: GrantFiled: June 19, 2020Date of Patent: December 27, 2022Assignee: MURATA MANUFACTURING CO., LTD.Inventors: Yuzo Kishi, Yutaka Kishimoto, Makoto Sawamura, Seiji Kai
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Patent number: 11245380Abstract: In an acoustic wave device, a piezoelectric body is directly or indirectly laminated on a silicon support substrate, and a functional electrode is provided on the piezoelectric body. A support layer is directly or indirectly laminated on the silicon support substrate, and the support layer is located outside the functional electrode when viewed in plan view. A silicon cover layer is provided on the support layer that includes an insulating material, and a space A is defined by the silicon support substrate, the support layer, and the silicon cover layer. The electric resistance of the silicon support substrate is higher than the electric resistance of the silicon cover layer.Type: GrantFiled: June 19, 2020Date of Patent: February 8, 2022Assignee: MURATA MANUFACTURING CO., LTD.Inventors: Makoto Sawamura, Seiji Kai, Yutaka Kishimoto, Yuzo Kishi
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Publication number: 20220002142Abstract: A cavity SOI substrate that includes a first silicon substrate having a cavity; a second silicon substrate bonded to the first silicon substrate, wherein the second silicon substrate includes a first portion oppositely aligned with the cavity of the first silicon substrate and that is thicker than a second portion of the second silicon substrate that is bonded to the first silicon substrate; and a silicon oxide film interposed between the first silicon substrate and the second silicon substrate.Type: ApplicationFiled: September 22, 2021Publication date: January 6, 2022Inventors: Makoto Sawamura, Ryunosuke Hino, Yutaka Kishimoto
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Publication number: 20200321937Abstract: An acoustic wave device includes a silicon support substrate that includes first and second main surfaces opposing each other, a piezoelectric structure provided on the first main surface and including the piezoelectric layer, an IDT electrode provided on the piezoelectric layer, a support layer provided on the first main surface of the silicon support substrate and surrounding the piezoelectric layer, a cover layer provided on the support layer, a through-via electrode that extending through the silicon support substrate and the piezoelectric structure, and a first wiring electrode connected to the through-via electrode and electrically connected to the IDT electrode. The piezoelectric structure includes at least one layer having an insulating property, the at least one layer including the piezoelectric layer. The first wiring electrode is provided on the layer having an insulating property in the piezoelectric structure.Type: ApplicationFiled: June 19, 2020Publication date: October 8, 2020Inventors: Yuzo KISHI, Yutaka KISHIMOTO, Makoto SAWAMURA, Seiji KAI
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Publication number: 20200321938Abstract: In an acoustic wave device, a piezoelectric body is directly or indirectly laminated on a silicon support substrate, and a functional electrode is provided on the piezoelectric body. A support layer is directly or indirectly laminated on the silicon support substrate, and the support layer is located outside the functional electrode when viewed in plan view. A silicon cover layer is provided on the support layer that includes an insulating material, and a space A is defined by the silicon support substrate, the support layer, and the silicon cover layer. The electric resistance of the silicon support substrate is higher than the electric resistance of the silicon cover layer.Type: ApplicationFiled: June 19, 2020Publication date: October 8, 2020Inventors: Makoto SAWAMURA, Seiji KAI, Yutaka KISHIMOTO, Yuzo KISHI
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Publication number: 20200321933Abstract: An acoustic wave device includes a piezoelectric substrate including a support substrate and a piezoelectric layer on the support substrate, the piezoelectric substrate including a first principal surface on the piezoelectric layer side, and a second principal surface on the support substrate side, an IDT electrode on the first principal surface, a support layer on the support substrate, a cover on the support layer, a through-via electrode provided through the support substrate and electrically connected to the IDT electrode, a first wiring electrode on the second principal surface of the piezoelectric substrate and electrically connected to the through-via electrode, and a protective film on the second principal surface to cover at least a portion of the first wiring electrode. The protective film is provided on an inner side of the support layer when viewed in a direction normal or substantially normal to the second principal surface.Type: ApplicationFiled: June 19, 2020Publication date: October 8, 2020Inventors: Yutaka KISHIMOTO, Seiji KAI, Makoto SAWAMURA, Yuzo KISHI
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Publication number: 20190312559Abstract: An elastic wave device manufacturing method includes a preparing a piezoelectric wafer on which IDT electrodes are provided in elastic wave device forming portions, providing on a first main surface of the piezoelectric wafer support layers in the elastic wave device forming portions, bonding a cover member to cover the support layers to obtain a multilayer body, cutting the multilayer body in a first direction multiple times, cutting the multilayer body in a second direction orthogonal to the first direction to obtain elastic wave devices, in which a resin layer extends across a boundary between the elastic wave device forming portions adjacent to each other on the first main surface of the piezoelectric wafer, and the second cutting step is performed in a state in which the resin layer is present.Type: ApplicationFiled: June 20, 2019Publication date: October 10, 2019Inventors: Makoto SAWAMURA, Seiji KAI
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Patent number: 9911902Abstract: A semiconductor light-emitting device includes a first conductivity-type semiconductor including a first electrode on a first main surface, a second conductivity-type semiconductor, and an active layer between a second main surface of the first conductivity-type semiconductor and a first main surface of the second conductivity-type semiconductor. Protrusions are disposed in at least part of a region of a second main surface of the second conductivity-type semiconductor facing the first electrode. A second electrode is disposed in at least part of a region of the second main surface of the second conductivity-type semiconductor except the region having the protrusions. The protrusions containing a dielectric material protrude from the second main surface of the second conductivity-type semiconductor in a direction away from the active layer and are separated by intervals longer than the wavelength of light emitted from the active layer in the medium of the protrusions.Type: GrantFiled: December 12, 2016Date of Patent: March 6, 2018Assignee: Sharp Kabushiki KaishaInventors: Makoto Sawamura, Shuhichiroh Yamamoto, Shigetoshi Ito
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Publication number: 20170179342Abstract: A semiconductor light-emitting device includes a first conductivity-type semiconductor including a first electrode on a first main surface, a second conductivity-type semiconductor, and an active layer between a second main surface of the first conductivity-type semiconductor and a first main surface of the second conductivity-type semiconductor. Protrusions are disposed in at least part of a region of a second main surface of the second conductivity-type semiconductor facing the first electrode. A second electrode is disposed in at least part of a region of the second main surface of the second conductivity-type semiconductor except the region having the protrusions. The protrusions containing a dielectric material protrude from the second main surface of the second conductivity-type semiconductor in a direction away from the active layer and are separated by intervals longer than the wavelength of light emitted from the active layer in the medium of the protrusions.Type: ApplicationFiled: December 12, 2016Publication date: June 22, 2017Inventors: Makoto SAWAMURA, Shuhichiroh YAMAMOTO, Shigetoshi ITO
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Patent number: 8806923Abstract: A sensor for detecting material to be tested 100 having small variations in electrochemical measurement values includes a work electrode 1 and a counter electrode 2 integrated into one via an insulator 3. As a result of contact between the material to be tested and the work electrode 1, output voltage changes. The work electrode 1 smaller than the counter electrode 2 and the insulator 3 is installed on a part of the surface of the insulator 3, and a peripheral wall 4 for surrounding the work electrode 1 is formed on the insulator 3 to operate as a storage part.Type: GrantFiled: March 26, 2010Date of Patent: August 19, 2014Assignee: National Institute for Materials ScienceInventor: Makoto Sawamura
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Patent number: 8212467Abstract: A light emitting device includes a light emitting element, a cap sealing the light emitting element, and a light conversion structural section covering an upper surface of the cap. The cap includes a base section having a hole for taking out light emitted from the light emitting element, and a glass section overlaid on the hole. The glass section is provided outside the base section, and the light conversion structural section is provided outside the glass section. According to this light emitting device, manufacturing cost can be reduced by suppressing reduction in yield.Type: GrantFiled: May 25, 2009Date of Patent: July 3, 2012Assignee: Sharp Kabushiki KaishaInventors: Makoto Sawamura, Shigetoshi Ito, Shuichi Hirukawa
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Publication number: 20120137797Abstract: A sensor for detecting material to be tested 100 having small variations in electrochemical measurement values includes a work electrode 1 and a counter electrode 2 integrated into one via an insulator 3. As a result of contact between the material to be tested and the work electrode 1, output voltage changes. The work electrode 1 smaller than the counter electrode 2 and the insulator 3 is installed on a part of the surface of the insulator 3, and a peripheral wall 4 for surrounding the work electrode 1 is formed on the insulator 3 to operate as a storage part.Type: ApplicationFiled: March 26, 2010Publication date: June 7, 2012Applicant: NAT'L INSTITUTE FOR MATERIALS SCIENCEInventor: Makoto Sawamura
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Patent number: 8072008Abstract: A high-sensitivity field effect transistor using as a channel ultrafine fiber elements such as carbon nanotube, and a biosensor using it. The field effect transistor comprises a substrate, a source electrode and a drain electrode arranged on the substrate, a channel for electrically connecting the source electrode with the drain electrode, and a gate electrode causing polarization due to the movement of free electrons in the substrate. For example, the substrate has a support substrate consisting of semiconductor or metal, a first insulating film formed on a first surface of the support substrate, and a second insulating film formed on a second surface of the support substrate, the source electrode, the drain electrode, and the channel arranged on the first insulating film, the gate electrode disposed on the second insulating film.Type: GrantFiled: December 13, 2007Date of Patent: December 6, 2011Assignees: Mitsumi Electric Co., Ltd., Semicon Craft TechnologiesInventors: Koichi Mukasa, Kazuhisa Sueoka, Seiji Takeda, Satoshi Hattori, Yoshiki Yamada, Makoto Sawamura, Hiroichi Ozaki, Atsushi Ishii, Motonori Nakamura, Hirotaka Hosoi
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Publication number: 20110183438Abstract: A single-electron transistor comprising at least a substrate, a source electrode and a drain electrode formed on top of the substrate opposing to each other, and a channel arranged between the source electrode is disclosed wherein the channel is composed of ultra fine fibers. By having such a constitution, a sensor can have excellent sensitivity.Type: ApplicationFiled: April 6, 2011Publication date: July 28, 2011Applicants: Japan Science and Technology Agency, National Institute of Advanced Industrial Science and TechnologyInventors: Kazuhiko MATSUMOTO, Koichi Mukasa, Atsushi Ishii, Seiji Takeda, Makoto Sawamura, Agus Subagyo, Hirotaka Hosoi, Kazuhisa Sueoka, Hiroshi Kida, Yoshihiro Sakoda
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Publication number: 20110180427Abstract: A single-electron transistor comprising at least a substrate, a source electrode and a drain electrode formed on top of the substrate opposing to each other, and a channel arranged between the source electrode is disclosed wherein the channel is composed of ultra fine fibers. By having such a constitution, a sensor can have excellent sensitivity.Type: ApplicationFiled: April 6, 2011Publication date: July 28, 2011Applicants: Japan Science and Technology Agency, National Institute of Advanced Industrial Science and TechnologyInventors: Kazuhiko MATSUMOTO, Koichi Mukasa, Atsushi Ishii, Seiji Takeda, Makoto Sawamura, Agus Subagyo, Hirotaka Hosoi, Kazuhisa Sueoka, Hiroshi Kida, Yoshihiro Sakoda
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Patent number: 7935989Abstract: A single-electron transistor comprising at least a substrate, a source electrode and a drain electrode formed on top of the substrate opposing to each other, and a channel arranged between the source electrode is disclosed wherein the channel is composed of ultra fine fibers. By having such a constitution, a sensor can have excellent sensitivity.Type: GrantFiled: May 21, 2004Date of Patent: May 3, 2011Assignees: Japan Science and Technology Agency, National Institute of Advanced Industrial Science and TechnologyInventors: Kazuhiko Matsumoto, Koichi Mukasa, Atsushi Ishii, Seiji Takeda, Makoto Sawamura, Agus Subagyo, Hirotaka Hosoi, Kazuhisa Sueoka, Hiroshi Kida, Yoshihiro Sakoda
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Publication number: 20110068679Abstract: Provided is a light emitting device of which manufacturing cost can be reduced by suppressing reduction in yield. The present invention relates to a light emitting device including a light emitting element (11), a cap (20) sealing the light emitting element (11), and a light conversion structural section (16) covering an upper surface of the cap (20), wherein the cap (20) includes a base section (14) having a hole for taking out light emitted from the light emitting element (11), and a glass section (15) overlaid on the hole, the glass section (15) is provided outside the base section (14), and the light conversion structural section (16) is provided outside the glass section (15).Type: ApplicationFiled: May 25, 2009Publication date: March 24, 2011Applicant: Sharp Kabushiki KaishaInventors: Makoto Sawamura, Shigetoshi Ito, Shuichi Hirukawa
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Publication number: 20100032653Abstract: This invention provides a process for producing a carbon nanotube electric field effect transistor that can improve yield in channel preparation. Carbon nanotubes dispersed in a mixed acid composed of sulfuric acid and nitric acid are subjected to radical treatment with aqueous hydrogen peroxide to cut the carbon nanotubes and thus to provide carboxyl-introduced carbon nanotube fragments. The carbon nanotube fragments are attached, through a covalent bond and/or an electrostatic bond, to a site, where a source electrode is to be formed, and a site where a drain electrode is to be formed, in a substrate with a functional group, to be attached to a carboxyl group, introduced thereinto. The carbon nanotube fragments attached to the substrate are attached to carbon nanotubes as channels through n-n interaction to fix the carbon nanotubes as channels to the substrate.Type: ApplicationFiled: March 28, 2007Publication date: February 11, 2010Applicant: National University Corpration Hokkaido UniversityInventors: Seiji Takeda, Koichi Mukasa, Atsushi Ishii, Hiroichi Ozaki, Makoto Sawamura, Hirotaka Hosoi, Satoshi Hattori, Yoshiki Yamada, Kazuhisa Sueoka