Abstract: A method of manufacturing a semiconductor device comprising a ceramics cylinder, a metal seal member closing an open end of the cylinder, a semiconductor element located within the cylinder and having electrodes, and leads or electrodes connected to the electrodes of the semiconductor element and extending from the cylinder. The method comprises the steps of coating powder of active metal consisting of Ti and/or Zr on the end face of the ceramics cylinder without heating the ceramics cylinder, in an amount of 0.1 mg/cm.sup.2 to 10 mg/cm.sup.2, mounting a layer of brazing filler metal on the end face of the ceramics cylinder, which have been coated with the powder of the active metal, placing the metal seal member on the layer of brazing filler metal, and heating the ceramics cylinder, the metal seal member, and the layer of brazing filler metal, thereby melting the layer of brazing filler metal and, thus, brazing the metal seal member to the open end of the ceramics cylinder.

Abstract: According to the present invention, there is provided an electronic component part comprising (i) a high thermal conductivity ceramic circuit board, (ii) terminal pins located over said circuit board, and (iii) a metal brazing material having metal brazing powder, at least one element selected from the Group IVa elements and a metal having a melting point higher than that of the metal brazing powder, the metal brazing material bonding said board and said pins. According to the present invention, metal, such as input/output terminal pins can very firmly be bonded to ceramic, such as a circuit board, within an atmosphere of, for example, N.sub.2 gas without the scattering of any brazing material in which case, unlike the prior art method, any vacuum furnace is not employed.

Abstract: According to the present invention, there is provided an electronic component part comprising (i) a high thermal conductivity ceramic circuit board, (ii) terminal pins located over said circuit board, and (iii) a metal brazing material having metal brazing powder, at least one element selected from the Group IVa elements and a metal having a melting point higher than that of the metal brazing powder, the metal brazing material bonding said board and said pins. According to the present invention, metal, such as input/output terminal pins can very firmly be bonded to ceramic, such as a circuit board, within an atmosphere of, for example, N.sub.2 gas without the scattering of any brazing material in which case, unlike the prior art method, vacuum furnace is not employed.

Abstract: A method of manufacturing an air-tight ceramic container is disclosed. This method includes the steps of coating an active metal consisting of Ti and/or Zr on an opening end face of a ceramic tubular member in an amount of 0.1 to 10 mg/cm.sup.2, thereby forming an active metal layer, placing a brazing filler metal on the active metal layer, placing a metal cover member for shielding an opening portion of the ceramic tubular member so that a peripheral portion end face of the metal cover member is in contact with the brazing filler metal, and melting the brazing filler metal by heating, thereby brazing the metal cover member to the opening end face of the ceramic tubular member.

Abstract: A nitride ceramic member is maintained at a vacuum of 1.times.10.sup.-4 Torr or less at a temperature of 1,000.degree. C. or more, and a metal vapor is brought into contact with the surface of the nitride ceramic member. A nitride is reacted with the metal in the surface portion of the ceramic member, and a metallized layer is formed on the surface of the member. If AlN is used as a nitride ceramic material, the AlN member is maintained at the vacuum at the high temperature and a Ti vapor is brought into contact wit the surface of the AlN member to form a TiN coating layer on the surface of the AlN member. A BN or graphite mask is formed on the surface of the nitride ceramic member and the above method is practiced to selectively form a metallized layer on the non-masked member surface. By selectively forming a metallized layer by using AlN, a highly thermal-conductivity substrate having a conductive layer formed on the AlN base can be prepared.

Abstract: A method of forming a nitride ceramic-metal complex material without using a special bonding material. This method comprises bringing a metallic material into contact with the surface of a nitride ceramic material, heating under vacuum the nitride ceramic material so as to dissociate the surface of the nitride ceramic material into nitrogen and a precursor of the ceramic material, thereby allowing the dissociated precursor to react with the metallic material and to achieve bonding between the nitride ceramic material and the metallic material. A nitride ceramic-metal complex material produced by the above method is also proposed.

Abstract: A method for preparing a highly heat conductive substrate which comprises interposing an active layer with a thickness of 0.5 to 10 .mu.m comprising silver (Ag) and an active metal selected from the group consisting of titanium, zirconium and hafnium, and also copper (Cu) optionally, between an aluminium nitride (AlN) substrate and a copper member; and joining said aluminium nitride (AlN) substrate and said copper (Cu) member with each other by heating. A copper wiring sheet comprising the above active layer is also usable in the method.