Abstract: A bi-directional shift register capable of transferring bit data in either a forward or reverse direction. The shift register includes multiple transfer elements (e.g., flip-flop circuits) cascaded together which provide synchronous transfer of the bit data from one stage to an adjacent stage in either direction. The shift register further includes two switching circuits for electrically connecting an input terminal of one transfer element to an output terminal of the adjacent transfer element. The first switching circuit is enabled to cause the transfer of the bit data in the forward direction, and the second switching circuit is enabled to cause the transfer of the bit data in the reverse direction.

Abstract: An optical response element is disclosed, comprising at least a photosensitive chromoprotein and a substance capable of changing its optical characteristics on application of an electric field or through an electrochemical reaction.

Abstract: In a programmable device wherein a circuit can be designed by programming the device according to a certain design specification, and the circuit is phase or frequency synchronized to an externally supplied signal. The device further allows for redesign by reprogramming the device.

Abstract: A programmable logic device including several flip-flop or counter circuits, a logical product matrix having product term lines, and a group of wiring lines. The group of wiring lines carry signals which are fed back to an input of a flip-flop or counter circuit.

Abstract: A solid pickup apparatus comprises a photo sensitive portion comprising photosensitive means and photosensitive transfer means for receiving a light including image information and generating respectively first signal charges and second signal charges therein corresponding to the image informations, the photosensitive transfer means mutually transferring the first and second signal charges, gate means for controlling the flow of said first signal charges of said photosensitive means to said photosensitive transfer means under transfer device control, drive control means for controlling the transference of the first and second signal charges in said photosensitive transfer means, and color filters covering the photosensitive portion.

Abstract: In a complementary insulated-gate field effect transistor including insulated-gate field effect transistors of p-channel and n-channel types, a portion of the insulating material layer to be used to form the n-channel transistor is formed to be thicker than a portion thereof to be used to form the p-channel transistor, and a portion of the electrode material layer to be used to constitute the p-channel transistor is formed to be longer along the channel than a portion thereof to be used to constitute the n-channel transistor. This prevents the threshold voltage in the n-channel and p-channel transistors from scattering widely.

Abstract: An solid state optical pickup device having integrally formed therein both a photosensitive matrix and peripheral circuits thereto. Both the photosensitive matrix and the peripheral circuit are built according to CMOS IC technology. A photoconductive film overlies the entire photosensitive matrix and is electrically connected to each of the charge accumulating regions in the matrix.

Abstract: A solid pickup apparatus comprises a photo sensitive portion comprising photosensitive means and photosensitive transfer means for receiving a light including image information and generating respectively first signal charges and second signal charges therein corresponding to the image informations, the photosensitive transfer means mutually transferring the first and second signal charges, gate means for controlling the flow of said first signal charges of said photosensitive means to said photosensitive transfer means under transfer device control, drive control means for controlling the transference of the first and second signal charges in said photosensitive transfer means, and color filters covering the photosensitive portion.

Abstract: A solid-state image pickup apparatus of a charge transfer type includes a solid-state imaging device having an array of photosensitive cells with charge divider paths provided for sequentially receiving charges generated in the cells of a horizontal line to divide the charges into two groups for each pixel. For one of the two fields subjected to interlace scanning, charges generated in the cells of odd-numbered lines are transferred to its output port, and one of the two groups of charges for even-numbered horizontal lines adjacent to odd-numbered horizontal lines are discharged. Then, the output port effects addition with weight on the charges from the cells of the odd- and even-numbered lines to produce video signals of the odd-numbered lines. For the other field, on the other hand, charges generated in the cells of even-numbered lines are transferred to the output port, and one of the two groups of charges for odd-numbered horizontal lines are discharged.

Abstract: An imaging apparatus includes a solid state imaging device in which pixels are arranged in a matrix. Row transfer lines and column transfer lines are each sequentially scanned so that video signals are delivered time-serially from the respective pixels to an output terminal. The row transfer lines are selected by a CTD which is scanned by drive pulses to sequentially and cyclically transfer charges therethrough. Gates associated with the CTD select one of the row transfer lines at a time responsive to a potential which is developed by the charges. The column transfer lines are selected by a shift register which addresses selection gates associated with the respective columns one after another responsive to a clock. The CTD may be assigned to the column transfer lines and the shift register to the row transfer lines. The apparatus is applicable even to a solid state photosensor arrangement made up of an array of photosensor elements in which case only one of the row transfer lines will be used.

Abstract: A solid-state imaging sensor in which the sensitivity of the sensor is automatically adjusted in accordance with the overall intensity of the image being sensed. A charging potential applied to an image signal storage capacitor in each pixel of an array of pixels of which the sensor is composed is dynamically varied as the overall intensity of the image being sensed changes. A voltage multiplying circuit, which may be either light sensitive or light insensitive, supplies the variable charging potential. If the voltage multiplying circuit is light insensitive, an elongated photodiode is provided along two sides of the sensor array to adjust the charging potential.

Abstract: An electrochromic display device with an improved current efficiency as well as with an extensive memory capability is disclosed; the device comprises a vapor deposited layer of an electrochromic material and a contiguous layer comprising chromium (III) oxide and the oxide of a transition metal or silicon also formed by vapor deposition. These two layers are sandwiched between a pair of electrodes at least one of which is light-transmitting.