Abstract: A heat treatment apparatus includes a semiconductor substrate; a carbon susceptor on which the semiconductor substrate is placed; a first heating device; an optical system for condensing light output from the first heating device and irradiating the surface of the semiconductor substrate; and a second heating device which faces the semiconductor substrate across the carbon susceptor and is arranged at a distance from the carbon susceptor. The semiconductor substrate is heated to a first temperature by the second heating device; and the semiconductor substrate is heated to a second temperature higher than the first temperature by the first heating device with the optical system that condenses light and irradiates the semiconductor substrate.

Abstract: The present disclosure provides a method of manufacturing a semiconductor substrate. The method includes: forming a graphene layer on a silicon plane of a silicon carbide monocrystalline substrate; forming a SiC epitaxial growth layer on the graphene layer; forming a stress layer on the SiC epitaxial growth layer; attaching a temporary substrate onto the stress layer; peeling off the graphene layer from the SiC epitaxial growth layer; forming a SiC polycrystalline growth layer on a carbon plane of the SiC epitaxial growth layer from which the graphene layer has been peeled off; and removing the temporary substrate. At least one of the forming of the graphene layer and the forming of the SiC epitaxial growth layer is under an atmosphere including fluorine.

Abstract: The present disclosure provides a composite substrate. The composite substrate includes: a SiC single crystal substrate having an off-angle; and a carbon-containing layer including a laminate of a reconstructed surface layer and a graphene layer, or a graphene layer disposed in contact with a surface of the SiC single crystal substrate. When an outermost surface of the SiC single crystal substrate is a Si-terminated surface, the laminate is disposed above the SiC single crystal substrate, and the graphene layer of the laminate is one or two layers. When the outermost surface of the SiC single crystal substrate is a C-terminated surface, one or two graphene layers are arranged above the SiC single crystal substrate.

Abstract: The present disclosure provides a support tool, for a temporary substrate using a support plate. The support tool includes: a first dummy substrate and a second dummy substrate; and a support, supporting the first dummy substrate and the second dummy substrate, and including at least three of the support plates. The support plate is fitted with the first dummy substrate through a first groove of the plurality of grooves, and fitted with the second dummy substrate through a second groove of the plurality of grooves. The support is configured to support the temporary substrate inserted into a third groove of the plurality of grooves of the support plate excluding the first groove and the second groove.

Abstract: Provided is a method for manufacturing a semiconductor substrate, including: a step of forming a graphene layer on a Si surface of a SiC single crystal substrate; a step of forming a SiC-epitaxial growth layer on the graphene layer; a step of forming a stress layer on the SiC-epitaxial growth layer; a step of attaching a graphite substrate on the stress layer; a step of detaching the graphene layer and the SiC-epitaxial growth layer; a step of forming a SiC polycrystalline growth layer on a C surface of the SiC-epitaxial growth layer from which the graphene layer is detached; and a step of removing the graphite substrate, in which the stress layer generates a stress that facilitates detachment between the graphene layer and the SiC-epitaxial growth layer.

Abstract: Provided is a microelectrode having a layered structure, including a layer containing a polymer compound having an aromatic ring (polymer compound layer) and a layer containing a conductive material (conductive layer), wherein a thickness of the polymer compound layer is 10 to 900 nm, a thickness of the conductive layer is 0.3 to 10 nm, and the microelectrode has a three-dimensional curved shape.

Abstract: A fabricating apparatus (2) of an sic epitaxial wafer disclosed herein includes: a growth furnace (100A); a gas mixing preliminary chamber (107) disposed outside the growth furnace and configured to mix carrier gas and/or material gas and to regulate a pressure thereof; a wafer boat (210) configured so that a plurality of SiC wafer pairs (200WP), in which two substrates each having an SiC single crystal in contact with each other in a back-to-back manner, are disposed at equal intervals with a gap therebetween; and a heating unit (101) configured to heat the wafer boat disposed in the growth furnace to an epitaxial growth temperature. The carrier gas and/or the material gas are introduced into the growth furnace after preliminarily being mixed and pressure-regulated in the gas mixing preliminary chamber (107) to grow an SiC layer on a surface of each of the plurality of SiC wafer pairs.

Abstract: A semiconductor substrate (1) according to an embodiment includes: a hexagonal SiC single crystal layer (13I); an SiC epitaxial growth layer (12E) disposed on an Si plane of an SiC single crystal layer (13I); and an SiC polycrystalline growth layer (18PC) disposed on a C plane opposite to the Si plane of the SiC single crystal layer (13I). The SiC single crystal layer (13I) includes a single crystal SiC thin layer (10HE) obtained by weakening the hydrogen ion implantation layer (10HI), and a phosphorus ion implantation layer (10PI). The phosphorus ion implantation layer (10PI) is disposed between the single crystal SiC thin layer (10HE) and the SiC polycrystalline growth layer (18PC). Consequently, the present disclosure provides a low-cost and high-quality semiconductor substrate and a fabrication method thereof.

Abstract: A semiconductor substrate (1) disclosed herein includes: an SiC single crystal substrate (10SB); a graphene layer (11GR) disposed on an Si plane of the SiC single crystal substrate (10SB); an SiC epitaxial growth layer (12RE) disposed above the SiC single crystal substrate (10SB) via the graphene layer (11GR); and a polycrystalline Si layer (15PS) disposed on an Si plane of the SiC epitaxial growth layer (12RE). The semiconductor substrate may include a graphite substrate or an silicon substrate disposed on a polycrystalline Si layer (15PS). The semiconductor substrate may further include an SiC polycrystalline growth layer (18PC) disposed on a C plane of the SiC epitaxial growth layer (12RE). Consequently, the present disclosure provides a low-cost and high-quality semiconductor substrate and a fabrication method thereof.

Abstract: The present disclosure provides a semiconductor optical signal amplifier for amplifying a light having an energy smaller than a band gap energy. The semiconductor optical signal amplifier includes: a first end surface; a second end surface, arranged apart from the first end surface; a first semiconductor region and a second semiconductor region, arranged between the first end surface and the second end surface; an active layer, arranged between the first end surface and the second end surface, and sandwiched between the first semiconductor region and the second semiconductor region, made of an indirect transition type semiconductor that amplifies a signal intensity of an input light by stimulated emission; a first electrode, connected to the first semiconductor region; and a second electrode, connected to the second semiconductor region and detecting a change in a carrier density in the active layer by a potential difference from the first electrode.

Abstract: Provided is a microelectrode having a layered structure, including a layer containing a polymer compound having an aromatic ring (polymer compound layer) and a layer containing a conductive material (conductive layer), wherein a thickness of the polymer compound layer is 10 to 900 nm, a thickness of the conductive layer is 0.3 to 10 nm, and the microelectrode has a three-dimensional curved shape.

Abstract: A semiconductor substrate structure includes: a substrate; and an epitaxial growth layer bonded to the substrate, wherein the substrate and the epitaxial growth layer are bonded by a room-temperature bonding or a diffusion bonding.

Abstract: A semiconductor substrate structure includes: a substrate; and an epitaxial growth layer bonded to the substrate, wherein the substrate and the epitaxial growth layer are bonded by a room-temperature bonding or a diffusion bonding

Abstract: Provided is a lighting device having high luminance in-plane uniformity without a dark part occurring at a connecting part between surface light source panels. The lighting device (1) is provided with a plurality of surface light source panel (2), and a plurality of light diffusion passive reflectors (3) disposed at the light-emitting side of the surface light source panel (2). In the light diffusion passive reflector (3), a rectangular-shaped bottom surface is disposed on a light emitting region of the surface light source panel (2), and a light-emitting surface (3a) has substantially the same size as a planar outline of the surface light source panel (2), and a side surface (3c) is formed to incline diagonally outward towards the light-emitting surface (3a) from the bottom surface. The light diffusion passive reflectors (3) which are mutually adjoining are disposed to contact with each other without a gap in between, and are disposed so that the light-emitting surface (3a) is continuously arranged.

Abstract: Provided is an organic light emitting device having a simple structure and enabling cost reduction. An organic light emitting device 30 of the present invention includes: an organic light emitting element 20; an electrode substrate (11, 12) including a pin connection hole (14, 15) with which the organic light emitting element 20 is fixed and electrically connected; and a lead pin (9, 10) having a clamp portion (9a, 10a) and an insertion portion (9b, 10b), the clamp portion (9a, 10a) clamping a peripheral portion of the organic light emitting element 20, the insertion portion (9b, 10b) being fitted into the pin connection hole (14, 15) to thereby connect the organic light emitting element 20 to the electrode substrate (11, 12).

Abstract: An organic electroluminescence lighting device includes a planar organic electroluminescence element; a planer heat diffusion plate provided on one surface of the organic electroluminescence element; and a constant current circuit element that is placed so as to contact the heat diffusion plate and supplies a constant current to the organic electroluminescence element.

Abstract: Provided is a lighting device having high luminance in-plane uniformity without a dark part occurring at a connecting part between surface light source panels. The lighting device (1) is provided with a plurality of surface light source panel (2), and a plurality of light diffusion passive reflectors (3) disposed at the light-emitting side of the surface light source panel (2). In the light diffusion passive reflector (3), a rectangular-shaped bottom surface is disposed on a light emitting region of the surface light source panel (2), and a light-emitting surface (3a) has substantially the same size as a planar outline of the surface light source panel (2), and a side surface (3c) is formed to incline diagonally outward towards the light-emitting surface (3a) from the bottom surface. The light diffusion passive reflectors (3) which are mutually adjoining are disposed to contact with each other without a gap in between, and are disposed so that the light-emitting surface (3a) is continuously arranged.

Abstract: Provided is an organic light emitting device having a simple structure and enabling cost reduction. An organic light emitting device 30 of the present invention includes: an organic light emitting element 20; an electrode substrate (11, 12) including a pin connection hole (14, 15) with which the organic light emitting element 20 is fixed and electrically connected; and a lead pin (9, 10) having a clamp portion (9a, 10a) and an insertion portion (9b, 10b), the clamp portion (9a, 10a) clamping a peripheral portion of the organic light emitting element 20, the insertion portion (9b, 10b) being fitted into the pin connection hole (14, 15) to thereby connect the organic light emitting element 20 to the electrode substrate (11, 12).

Abstract: An organic electroluminescence lighting device includes a planar organic electroluminescence element; a planer heat diffusion plate provided on one surface of the organic electroluminescence element; and a constant current circuit element that is placed so as to contact the heat diffusion plate and supplies a constant current to the organic electroluminescence element.

Abstract: The invention provides an organic EL display device in which at least two electrodes and organic EL layers are alternately provided on a substrate respectively, and the electrodes thus provided have an anode and a cathode formed alternately. In the organic EL display device according to the invention, at least two organic EL layers are provided. As compared with a conventional organic EL display device having one organic EL layer, therefore, an emission luminance is increased to be a double or more.