Abstract: A filament winding apparatus includes a rail extending in a first direction, a core material support device that supports a core material, and a winding device that winds a fiber bundle onto an outer peripheral surface of the core material, the winding device including: a guide unit having an opening through which the core material passes, and guiding the fiber bundle; and a main frame on which the guide unit is mounted; wherein the main frame is movable relative to the core material in the first direction, the main frame is movable in a second direction orthogonal to the first direction, and the main frame is rotatable around a first rotational axis extending in a third direction orthogonal to each of the first direction and the second direction.

Abstract: A filament winding device includes a fiber bundle retainer that temporarily retains fiber bundles. The fiber bundle retainer includes: a reel member including an outer peripheral portion having pins movable in the axial direction relative to the fiber bundles supplied through fiber bundle guides and rotatable about the axis of the liner, the reel member capable of winding the fiber bundles onto the outer peripheral portion; a first cutting unit configured to cut a part of each of the fiber bundles in the circumferential direction, the part being between a part of the fiber bundle wound on the outer peripheral portion and a part of the fiber bundle wound on the liner; and a second cutting unit different from the first cutting unit and configured to cut a part of each of the fiber bundles in the axial direction, the part being wound on the outer peripheral portion.

Abstract: A punch biopsy tool includes a punch cutting element which includes an inner surface, an outer surface, and a cutting edge along a bottom edge, and which defines an aperture between the inner surface and the outer surface. The punch biopsy tool also includes a flexible cutting element which is disposed along the inner surface of the punch cutting element and is configured to be pulled through the aperture.

Abstract: A method is provided for elevating the stability of peptides containing the sequence -Asp-Gly- or -Asn-Gly- by preventing these sequences from changing into succinimide compounds or &bgr;-transition compounds. The method comprises adding an organic acid to a solution of peptides containing these sequences to bring the pH value of the solution to a pH of between 5 and 6.5 followed by freeze-drying. In one embodiment, sucrose or mannitol is added together with the organic acid. Freeze-dried medicinal compositions obtained by using the method have excellent stability. In one embodiment of the invention, compositions produced by the method are provided and comprise hirudin or hirudin variants.

Abstract: A method for forming a fine resist pattern by exposing comprising the steps of: (i) forming a resist layer on a semiconductor substrate; (ii) forming a phase shifting pattern in an upper portion of the resist layer, the phase-sifting pattern having a tapered edge corresponding to a portion to which formation of an objective fine resist pattern is not desired; (iii) exposing the entire surface of the semiconductor substrate including the phase-shifting pattern; and (iv) forming a fine resist pattern below an outline except for the tapered edge of the phase-shifting pattern.

Abstract: A method of fabricating a semiconductor device having a p-type semiconductor substrate and a p-well for memory cells which is formed in the substrate is disclosed. N-type impurities are implanted into a region of the substrate in which the p-well for memory cells is to be formed. Then, the region is selectively and thermally oxidized to form an oxide film on the first region, and the n-type impurities are simultaneously diffused in the substrate. After the oxide film is removed, the p-well is formed within the region of the substrate in which the n-type impurities are diffused.

Abstract: In the system according to the present invention detects defects by projecting illumination light for exposure having a certain wavelength perpendicularly onto a phase shift mask to be examined; picking up, by means of an image acquisition section, two pattern images which are formed from the irradiated light having passed through two neighboring dies on the phase shift mask and image-formed individually through respective magnifying projection optical systems, and superposing the image patterns of two dies through an alignment to compare therebetween.

Abstract: A method for forming a resist mask pattern by light exposure providing the steps of forming a resist layer on a semiconductor substrate, forming a phase shifter pattern for inverting a phase of exposed light in an upper portion of the resist layer itself or over the surface of the resist layer, exposing the surface of the semiconductor substrate including the phase shifter pattern, and forming a fine mask pattern below the edge of the phase shifter pattern.

Abstract: A manufacturing process for a semiconductor device comprising the following steps: to spin-coat by Spin-on method a solution for forming a SOG film on a wafer having a device formed on the surface to form a coating of the SOG film forming solute thereon; to treat by a liquid which is able to dissolve the solute for forming SOG film at least a part of the wafer which is held by claws of a dry etching system at a later stage in the series of processes, thereby removing a coating of the SOG film forming solute at that part; and to then bake the wafer to complete a SOG film.

Abstract: An easily circuit-programmable semiconductor device which comprises a dynamic random access memory (DRAM) unit, a redundancy circuit and a connection between them, the DRAM unit having as a capacitor a dielectric film made of a silicon oxide/silicon nitride/silicon oxide composite layer and the connection having, as a member for programming the redundancy circuit, an electrically breakable dielectric film made of a silicon oxide/silicon nitride/silicon oxide composite layer.

Abstract: A process for producing a semiconductor device including the steps of:(a) forming a trench in a semiconductor substrate at a portion thereof where an isolating zone is to be formed,(b) doping the substrate with an impurity element from the inner wall thereof defining the trench to form a high-concentration impurity diffused region, and(c) etching the bottom surface of the trench to increase the depth of the trench, thereby separating the impurity diffused region to form the isolating zone,which is useful for the fabrication of semiconductor devices of high integration with low well resistance.