Abstract: Disclosed is a plasma process apparatus which permits generating microwaves and a magnetic field so as to bring about electron cyclotron resonance and, thus, to generate a plasma which is applied to a semiconductor wafer, comprising microwave generating means for generating said microwaves, microwave transmitting means for transmitting the microwaves, a process chamber having said semiconductor wafer arranged therein, the microwaves being introduced into said process chamber through said microwave transmitting means, process gas supply means for supplying a process gas into said process chamber, and magnetic field generating means for generating a magnetic field within the process chamber. The frequency of the microwave falls within a range between a lower limit of a cutoff frequency determined by the inner diameter of the process chamber and an upper limit of a maximum frequency at which a standing wave of the microwave does not occur on the surface of the object.

Abstract: A method of operating ozone production facilities comprises supplying a starting gas from oxygen production facilities alone to an ozonizer when the consumption of oxygen is within the production capacity of the oxygen production facilities; or mixing pure oxygen gas from liquid oxygen facilities with the gas from the oxygen production facilities, and supplying the resulting mixed gas as the starting gas to the ozonizer, when the consumption of oxygen exceeds the production capacity of the oxygen production facilities. Thus, the ozone production facilities, even if small in scale, can always supply an ozone-containing gas having an arbitrary ozone concentration, ranging from the maximum to a lower concentration.

Abstract: Disclosed is a plasma process apparatus which permits generating microwaves and a magnetic field so as to bring about electron cyclotron resonance and, thus, to generate a plasma which is applied to a semiconductor wafer, comprising microwave generating means for generating said microwaves, microwave transmitting means for transmitting the microwaves, a process chamber having said semiconductor wafer arranged therein, the microwaves being introduced into said process chamber through said microwave transmitting means, process gas supply means for supplying a process gas into said process chamber, and magnetic field generating means for generating a magnetic field within the process chamber. The frequency of the microwave falls within a range between a lower limit of a cutoff frequency determined by the inner diameter of the process chamber and an upper limit of a maximum frequency at which a standing wave of the microwave does not occur on the surface of the object.

Abstract: Ozone production facilities comprising oxygen production facilities as a starting gas supply source, an ozonizer, and an ozone analyzer, and adapted to supply the starting gas by the oxygen production facilities, ozonize the starting gas by the ozonizer to produce an ozone-containing gas; the ozone production facilities further including liquid oxygen facilities as another starting gas supply source, and an oxygen flowmeter for monitoring the flow rate of oxygen supplied by the liquid oxygen facilities.

Abstract: An ozone generator includes a vessel provided at one end with a feed gas chamber for receiving a feed gas through an inlet and at the other end with an ozonized gas chamber, communicating with an outlet, for receiving an ozonized gas, a cylindrical tube ground electrode having a dielectric on an inner peripheral surface for communicating the feed gas chamber with ozonized gas chamber, a hollow cylindrical high voltage electrode having a predetermined discharge gap with respect to the dielectric and disposed concentrically with the cylindrical tube ground electrode, and a high frequency power source for applying a voltage between the ground electrode and the high voltage electrode. Cooling water is supplied to a water jacket surrounding the ground electrode and formed within the vessel and to the hollow cylindrical high voltage electrode to cool both electrodes.

Abstract: A plasma generating gas and a reactive gas are fed into a vacuum container. A magnetic field and microwaves for plasma generation are applied to the vacuum container, whereupon plasma is generated by ECR, and whereupon, for example, an SiO.sub.2 or SiOF film is formed on aluminum wiring. In the initial phase of film deposition, the level of the radio-frequency power for plasma lead-in applied to the stage is adjusted, for example, to zero (first value includes zero) in advance. Then, after the SiO.sub.2 or SiOF film has been deposited to a thickness of tens of nanometers, for example, the radio-frequency power for plasma lead-in is adjusted to a normal power level (second value) and applied to the stage. Thereupon, an intensive anisotropic plasma is generated, and a potential distribution corresponding to the self-bias is formed in the plane direction of the wafer. Since the thin SiO.sub.

Abstract: Herein provided is an electrostatic chuck whose surface is processed so as to have projections and recesses, which has a simple structure and which makes it possible to establish a uniform temperature distribution on a wafer surface when the wafer is held on the processed surface thereof through the use of an electrostatic attractive force. The uneven surface configuration of the electrostatic chuck is designed so that the proportion of the area occupied by the projected surface in the peripheral portion, i.e., in the relatively outer region of the surface, is smaller than that of the area occupied by the projected surface in the central portion, i.e., in the relatively inner region of the surface of the electrostatic chuck, in order to change the rate of heat transmission so as to be larger in the central portion than in the peripheral portion between the wafer and the electrostatic chuck. In this case, the height of the projections is limited to the range of from 10 to 70 .mu.