Patents by Inventor Makoto Udagawa
Makoto Udagawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20150270322Abstract: The present invention provides a TFT that has a channel length particularly longer than that of an existing one, specifically, several tens to several hundreds times longer than that of the existing one, and thereby allowing turning to an on-state at a gate voltage particularly higher than the existing one and driving, and allowing having a low channel conductance gd. According to the present invention, not only the simple dispersion of on-current but also the normalized dispersion thereof can be reduced, and other than the reduction of the dispersion between the individual TFTs, the dispersion of the OLEDs themselves and the dispersion due to the deterioration of the OLED can be reduced.Type: ApplicationFiled: June 4, 2015Publication date: September 24, 2015Inventors: Makoto Udagawa, Masahiko Hayakawa, Jun Koyama, Mitsuaki Osame, Aya Anzai
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Patent number: 9054199Abstract: The present invention provides a TFT that has a channel length particularly longer than that of an existing one, specifically, several tens to several hundreds times longer than that of the existing one, and thereby allowing turning to an on-state at a gate voltage particularly higher than the existing one and driving, and allowing having a low channel conductance gd. According to the present invention, not only the simple dispersion of on-current but also the normalized dispersion thereof can be reduced, and other than the reduction of the dispersion between the individual TFTs, the dispersion of the OLEDs themselves and the dispersion due to the deterioration of the OLED can be reduced.Type: GrantFiled: February 5, 2014Date of Patent: June 9, 2015Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Makoto Udagawa, Masahiko Hayakawa, Jun Koyama, Mitsuaki Osame, Aya Anzai
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Publication number: 20140151707Abstract: The present invention provides a TFT that has a channel length particularly longer than that of an existing one, specifically, several tens to several hundreds times longer than that of the existing one, and thereby allowing turning to an on-state at a gate voltage particularly higher than the existing one and driving, and allowing having a low channel conductance gd. According to the present invention, not only the simple dispersion of on-current but also the normalized dispersion thereof can be reduced, and other than the reduction of the dispersion between the individual TFTs, the dispersion of the OLEDs themselves and the dispersion due to the deterioration of the OLED can be reduced.Type: ApplicationFiled: February 5, 2014Publication date: June 5, 2014Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Makoto Udagawa, Masahiko Hayakawa, Jun Koyama, Mitsuaki Osame, Aya Anzai
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Publication number: 20140131476Abstract: Provided is an injector in which adhesion between a stator and a rotor of an ultrasonic motor can be released efficiently. An injector (1) which injects a chemical liquid includes: an ultrasonic motor unit (3) including an ultrasonic motor (31); a drive mechanism (4) to be driven by the ultrasonic motor unit (3) so as to feed the chemical liquid when the ultrasonic motor (31) rotates forwardly; and a control device (5) which controls the ultrasonic motor (31) of the ultrasonic motor unit (3). The ultrasonic motor (31) includes a stator (32) and a rotor (33), and the control device (5) controls the ultrasonic motor (31) to alternately repeat forward rotation and reverse rotation so that adhesion between the stator (32) and the rotor (33) is released.Type: ApplicationFiled: June 7, 2012Publication date: May 15, 2014Applicant: NEMOTO KYORINDO CO., LTD.Inventors: Toshio Kanetaka, Makoto Udagawa, Toshiiku Sashida
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Patent number: 8723760Abstract: A-light-emitting device which realizes a high aperture ratio and in which the quality of image is little affected by the variation in the characteristics of TFTs. A large holding capacitor Cs is not provided in the pixel portion but, instead, the channel length and the channel width of the driving TFTs are increased, and the channel capacitance is utilized as Cs. The channel length is selected to be very larger than the channel width to improve current characteristics in the saturated region, and a high VGS is applied to the driving TFTs to obtain a desired drain current. Therefore, the drain currents of the driving TFTs are little affected by the variation in the threshold voltage. In laying out the pixels, further, wiring is arranged under the partitioning wall and the driving TFTs are arranged under the wiring in order to avoid a decrease in the aperture ratio despite of an increase in the size of the driving TFT.Type: GrantFiled: August 1, 2007Date of Patent: May 13, 2014Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Mitsuaki Osame, Aya Anzai, Jun Koyama, Makoto Udagawa, Masahiko Hayakawa, Shunpei Yamazaki
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Patent number: 8648338Abstract: The present invention provides a TFT that has a channel length particularly longer than that of an existing one, specifically, several tens to several hundreds times longer than that of the existing one, and thereby allowing turning to an on-state at a gate voltage particularly higher than the existing one and driving, and allowing having a low channel conductance gd. According to the present invention, not only the simple dispersion of on-current but also the normalized dispersion thereof can be reduced, and other than the reduction of the dispersion between the individual TFTs, the dispersion of the OLEDs themselves and the dispersion due to the deterioration of the OLED can be reduced.Type: GrantFiled: November 30, 2012Date of Patent: February 11, 2014Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Makoto Udagawa, Masahiko Hayakawa, Jun Koyama, Mitsuaki Osame, Aya Anzai
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Publication number: 20130248892Abstract: A-light-emitting device which realizes a high aperture ratio and in which the quality of image is little affected by the variation in the characteristics of TFTs. The channel length of the driving TFTs is selected to be very larger than the channel width of the driving TFTs to improve current characteristics in the saturated region, and a high VGS is applied to the driving TFTs to obtain a desired drain current. Therefore, the drain currents of the driving TFTs are little affected by the variation in the threshold voltage. In laying out the pixels, further, wiring is arranged under the partitioning wall and the driving TFTs are arranged under the wiring in order to avoid a decrease in the aperture ratio despite of an increase in the size of the driving TFT.Type: ApplicationFiled: February 20, 2013Publication date: September 26, 2013Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Mitsuaki Osame, Aya Anzai, Jun Koyama, Makoto Udagawa, Masahiko Hayakawa, Shunpei Yamazaki
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Patent number: 8324618Abstract: The present invention provides a TFT that has a channel length particularly longer than that of an existing one, specifically, several tens to several hundreds times longer than that of the existing one, and thereby allowing turning to an on-state at a gate voltage particularly higher than the existing one and driving, and allowing having a low channel conductance gd. According to the present invention, not only the simple dispersion of on-current but also the normalized dispersion thereof can be reduced, and other than the reduction of the dispersion between the individual TFTs, the dispersion of the OLEDs themselves and the dispersion due to the deterioration of the OLED can be reduced.Type: GrantFiled: March 28, 2012Date of Patent: December 4, 2012Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Makoto Udagawa, Masahiko Hayakawa, Jun Koyama, Mitsuaki Osame, Aya Anzai
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Publication number: 20120181540Abstract: The present invention provides a TFT that has a channel length particularly longer than that of an existing one, specifically, several tens to several hundreds times longer than that of the existing one, and thereby allowing turning to an on-state at a gate voltage particularly higher than the existing one and driving, and allowing having a low channel conductance gd. According to the present invention, not only the simple dispersion of on-current but also the normalized dispersion thereof can be reduced, and other than the reduction of the dispersion between the individual TFTs, the dispersion of the OLEDs themselves and the dispersion due to the deterioration of the OLED can be reduced.Type: ApplicationFiled: March 28, 2012Publication date: July 19, 2012Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Makoto Udagawa, Masahiko Hayakawa, Jun Koyama, Mitsuaki Osame, Aya Anzai
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Patent number: 8154015Abstract: The present invention provides a TFT that has a channel length particularly longer than that of an existing one, specifically, several tens to several hundreds times longer than that of the existing one, and thereby allowing turning to an on-state at a gate voltage particularly higher than the existing one and driving, and allowing having a low channel conductance gd. According to the present invention, not only the simple dispersion of on-current but also the normalized dispersion thereof can be reduced, and other than the reduction of the dispersion between the individual TFTs, the dispersion of the OLEDs themselves and the dispersion due to the deterioration of the OLED can be reduced.Type: GrantFiled: April 13, 2010Date of Patent: April 10, 2012Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Makoto Udagawa, Masahiko Hayakawa, Jun Koyama, Mitsuaki Osame, Aya Anzai
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Publication number: 20100224868Abstract: The present invention provides a TFT that has a channel length particularly longer than that of an existing one, specifically, several tens to several hundreds times longer than that of the existing one, and thereby allowing turning to an on-state at a gate voltage particularly higher than the existing one and driving, and allowing having a low channel conductance gd. According to the present invention, not only the simple dispersion of on-current but also the normalized dispersion thereof can be reduced, and other than the reduction of the dispersion between the individual TFTs, the dispersion of the OLEDs themselves and the dispersion due to the deterioration of the OLED can be reduced.Type: ApplicationFiled: April 13, 2010Publication date: September 9, 2010Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Makoto Udagawa, Masahiko Hayakawa, Jun Koyama, Mitsuaki Osame, Aya Anzai
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Patent number: 7723721Abstract: The present invention provides a TFT that has a channel length particularly longer than that of an existing one, specifically, several tens to several hundreds times longer than that of the existing one, and thereby allowing turning to an on-state at a gate voltage particularly higher than the existing one and driving, and allowing having a low channel conductance gd. According to the present invention, not only the simple dispersion of on-current but also the normalized dispersion thereof can be reduced, and other than the reduction of the dispersion between the individual TFTs, the dispersion of the OLEDs themselves and the dispersion due to the deterioration of the OLED can be reduced.Type: GrantFiled: November 4, 2002Date of Patent: May 25, 2010Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Makoto Udagawa, Masahiko Hayakawa, Jun Koyama, Mitsuaki Osame, Aya Anzai
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Publication number: 20080170005Abstract: A-light-emitting device which realizes a high aperture ratio and in which the quality of image is little affected by the variation in the characteristics of TFTs. A large holding capacitor Cs is not provided in the pixel portion but, instead, the channel length and the channel width of the driving TFTs are increased, and the channel capacitance is utilized as Cs. The channel length is selected to be very larger than the channel width to improve current characteristics in the saturated region, and a high VGS is applied to the driving TFTs to obtain a desired drain current. Therefore, the drain currents of the driving TFTs are little affected by the variation in the threshold voltage. In laying out the pixels, further, wiring is arranged under the partitioning wall and the driving TFTs are arranged under the wiring in order to avoid a decrease in the aperture ratio despite of an increase in the size of the driving TFT.Type: ApplicationFiled: August 1, 2007Publication date: July 17, 2008Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Mitsuaki Osame, Aya Anzai, Jun Koyama, Makoto Udagawa, Masahiko Hayakawa, Shunpei Yamazaki
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Patent number: 7262556Abstract: A light-emitting device which realizes a high aperture ratio and in which the quality of image is little affected by the variation in the characteristics of TFTs. A large holding capacitor Cs is not provided in the pixel portion but, instead, the channel length and the channel width of the driving TFTs are increased, and the channel capacitance is utilized as Cs. The channel length is selected to be very larger than the channel width to improve current characteristics in the saturated region, and a high VGS is applied to the driving TFTs to obtain a desired drain current. Therefore, the drain currents of the driving TFTs are little affected by the variation in the threshold voltage. In laying out the pixels, further, wiring is arranged under the partitioning wall and the driving TFTs are arranged under the wiring in order to avoid a decrease in the aperture ratio despite of an increase in the size of the driving TFT.Type: GrantFiled: June 8, 2005Date of Patent: August 28, 2007Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Mitsuaki Osame, Aya Anzai, Jun Koyama, Makoto Udagawa, Masahiko Hayakawa, Shunpei Yamazaki
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Publication number: 20050231122Abstract: A light-emitting device which realizes a high aperture ratio and in which the quality of image is little affected by the variation in the characteristics of TFTs. A large holding capacitor Cs is not provided in the pixel portion but, instead, the channel length and the channel width of the driving TFTs are increased, and the channel capacitance is utilized as Cs. The channel length is selected to be very larger than the channel width to improve current characteristics in the saturated region, and a high VGS is applied to the driving TFTs to obtain a desired drain current. Therefore, the drain currents of the driving TFTs are little affected by the variation in the threshold voltage. In laying out the pixels, further, wiring is arranged under the partitioning wall and the driving TFTs are arranged under the wiring in order to avoid a decrease in the aperture ratio despite of an increase in the size of the driving TFT.Type: ApplicationFiled: June 8, 2005Publication date: October 20, 2005Inventors: Mitsuaki Osame, Aya Anzai, Jun Koyama, Makoto Udagawa, Masahiko Hayakawa, Shunpei Yamazaki
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Patent number: 6909240Abstract: A light-emitting device which realizes a high aperture ratio and in which the quality of image is little affected by the variation in the characteristics of TFTs. A large holding capacitor Cs is not provided in the pixel portion but, instead, the channel length and the channel width of the driving TFTs are increased, and the channel capacitance is utilized as Cs. The channel length is selected to be very larger than the channel width to improve current characteristics in the saturated region, and a high VGS is applied to the driving TFTs to obtain a desired drain current. Therefore, the drain currents of the driving TFTs are little affected by the variation in the threshold voltage. In laying out the pixels, further, wiring is arranged under the partitioning wall and the driving TFTs are arranged under the wiring in order to avoid a decrease in the aperture ratio despite of an increase in the size of the driving TFT.Type: GrantFiled: January 17, 2003Date of Patent: June 21, 2005Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Mitsuaki Osame, Aya Anzai, Jun Koyama, Makoto Udagawa, Masahiko Hayakawa, Shunpei Yamazaki
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Publication number: 20040124421Abstract: A light-emitting device that uses a light-emitting element which can be minimized its deterioration as a display element is provided. And also a light-emitting device which can control power consumption and enhance reliability by using the light-emitting element as a display element, and a manufacturing method thereof are provided. A light-emitting device in which the concentration of dopant is set in the range of no fewer than 0.001%, nor more than 0.35% by weight, a photosensitive organic resin film having an anode and an opening is disposed on a first passivation film, an anode, a cathode, and a light-emitting layer are overlapped in the opening, and the organic resin film and the cathode are covered with a second passivation film.Type: ApplicationFiled: September 18, 2003Publication date: July 1, 2004Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Hisao Ikeda, Makoto Udagawa, Ryoji Nomura
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Publication number: 20030222589Abstract: A light-emitting device which realizes a high aperture ratio and in which the quality of image is little affected by the variation in the characteristics of TFTs. A large holding capacitor Cs is not provided in the pixel portion but, instead, the channel length and the channel width of the driving TFTs are increased, and the channel capacitance is utilized as Cs. The channel length is selected to be very larger than the channel width to improve current characteristics in the saturated region, and a high VGS is applied to the driving TFTs to obtain a desired drain current. Therefore, the drain currents of the driving TFTs are little affected by the variation in the threshold voltage. In laying out the pixels, further, wiring is arranged under the partitioning wall and the driving TFTs are arranged under the wiring in order to avoid a decrease in the aperture ratio despite of an increase in the size of the driving TFT.Type: ApplicationFiled: January 17, 2003Publication date: December 4, 2003Inventors: Mitsuaki Osame, Aya Anzai, Jun Koyama, Makoto Udagawa, Masahiko Hayakawa, Shunpei Yamazaki
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Publication number: 20030089905Abstract: The present invention provides a TFT that has a channel length particularly longer than that of an existing one, specifically, several tens to several hundreds times longer than that of the existing one, and thereby allowing turning to an on-state at a gate voltage particularly higher than the existing one and driving, and allowing having a low channel conductance gd. According to the present invention, not only the simple dispersion of on-current but also the normalized dispersion thereof can be reduced, and other than the reduction of the dispersion between the individual TFTs, the dispersion of the OLEDs themselves and the dispersion due to the deterioration of the OLED can be reduced.Type: ApplicationFiled: November 4, 2002Publication date: May 15, 2003Inventors: Makoto Udagawa, Masahiko Hayakawa, Jun Koyama, Mitsuaki Osame, Aya Anzai