Patents by Inventor Makoto Yasudo

Makoto Yasudo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SEMICONDUCTOR DEVICE HAVING RESISTANCE ELEMENTS AND FABRICATION METHOD THEREOF
    Publication number: 20190326385
    Abstract: A semiconductor device includes as a resistance element a first polycrystalline silicon and a second polycrystalline silicon containing impurities, such as boron, of the same kind and having different widths. The first polycrystalline silicon contains the impurities at a concentration CX. The second polycrystalline silicon has a width larger than a width of the first polycrystalline silicon and contains the impurities of the same kind at a concentration CY lower than the concentration CX. A sign of a temperature coefficient of resistance (TCR) of the first polycrystalline silicon changes at the concentration CX. A sign of a TCR of the second polycrystalline silicon changes at the concentration CY.
    Type: Application
    Filed: July 2, 2019
    Publication date: October 24, 2019
    Applicant: MIE FUJITSU SEMICONDUCTOR LIMITED
    Inventors: Taiji Ema, Nobuhiro Misawa, Kazuyuki Kumeno, Makoto Yasudo
  • SEMICONDUCTOR DEVICE HAVING RESISTANCE ELEMENTS AND FABRICATION METHOD THEREOF
    Publication number: 20190326386
    Abstract: A semiconductor device includes as a resistance element a first polycrystalline silicon and a second polycrystalline silicon containing impurities, such as boron, of the same kind and having different widths. The first polycrystalline silicon contains the impurities at a concentration CX. The second polycrystalline silicon has a width larger than a width of the first polycrystalline silicon and contains the impurities of the same kind at a concentration CY lower than the concentration CX. A sign of a temperature coefficient of resistance (TCR) of the first polycrystalline silicon changes at the concentration CX. A sign of a TCR of the second polycrystalline silicon changes at the concentration CY.
    Type: Application
    Filed: July 2, 2019
    Publication date: October 24, 2019
    Applicant: MIE FUJITSU SEMICONDUCTOR LIMITED
    Inventors: Taiji Ema, Nobuhiro Misawa, Kazuyuki Kumeno, Makoto Yasudo