Patents by Inventor Maksim Vladimirovich RIABKO

Maksim Vladimirovich RIABKO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11789332
    Abstract: Provided is an apparatus for controlling a laser light propagation direction, including: a substrate configured to transmit at least a wavelength range of a laser light incident on the apparatus and deflected; and a metasurface disposed on the substrate, and comprising a plurality of nano-antennas, wherein each of the plurality of nano-antennas may include: a first contact and a second contact that are disposed apart from each other, and comprise an electrically conductive material to transmit at least the wavelength range of the laser light; and a semiconductor p-i-n heterostructure that disposed between the first contact and the second contact and comprises a p-region, an i-region and an n-region, which are disposed in parallel to the substrate.
    Type: Grant
    Filed: September 17, 2020
    Date of Patent: October 17, 2023
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Alexander Sergeevich Shorokhov, Maksim Vladimirovich Riabko, Kirill Igorevich Okhlopkov, Alexandr Igorevich Musorin
  • Publication number: 20210003902
    Abstract: Provided is an apparatus for controlling a laser light propagation direction, including: a substrate configured to transmit at least a wavelength range of a laser light incident on the apparatus and deflected; and a metasurface disposed on the substrate, and comprising a plurality of nano-antennas, wherein each of the plurality of nano-antennas may include: a first contact and a second contact that are disposed apart from each other, and comprise an electrically conductive material to transmit at least the wavelength range of the laser light; and a semiconductor p-i-n heterostructure that disposed between the first contact and the second contact and comprises a p-region, an i-region and an n-region, which are disposed in parallel to the substrate.
    Type: Application
    Filed: September 17, 2020
    Publication date: January 7, 2021
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Alexander Sergeevich SHOROKHOV, Maksim Vladimirovich RIABKO, Kirill Igorevich OKHLOPKOV, Alexandr Igorevich MUSORIN
  • Patent number: 10831082
    Abstract: Provided is an apparatus for controlling a laser light propagation direction, including: a substrate configured to transmit at least a wavelength range of a laser light incident on the apparatus and deflected; and a metasurface disposed on the substrate, and comprising a plurality of nano-antennas, wherein each of the plurality of nano-antennas may include: a first contact and a second contact that are disposed apart from each other, and comprise an electrically conductive material to transmit at least the wavelength range of the laser light; and a semiconductor p-i-n heterostructure that disposed between the first contact and the second contact and comprises a p-region, an i-region and an n-region, which are disposed in parallel to the substrate.
    Type: Grant
    Filed: April 18, 2019
    Date of Patent: November 10, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Alexander Sergeevich Shorokhov, Maksim Vladimirovich Riabko, Kirill Igorevich Okhlopkov, Alexandr Igorevich Musorin
  • Publication number: 20190369458
    Abstract: Provided is an apparatus for controlling a laser light propagation direction, including: a substrate configured to transmit at least a wavelength range of a laser light incident on the apparatus and deflected; and a metasurface disposed on the substrate, and comprising a plurality of nano-antennas, wherein each of the plurality of nano-antennas may include: a first contact and a second contact that are disposed apart from each other, and comprise an electrically conductive material to transmit at least the wavelength range of the laser light; and a semiconductor p-i-n heterostructure that disposed between the first contact and the second contact and comprises a p-region, an i-region and an n-region, which are disposed in parallel to the substrate.
    Type: Application
    Filed: April 18, 2019
    Publication date: December 5, 2019
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Alexander Sergeevich SHOROKHOV, Maksim Vladimirovich RIABKO, Kirill Igorevich OKHLOPKOV, Alexandr Igorevich MUSORIN
  • Patent number: 10296776
    Abstract: A biometrics authentication apparatus and a biometrics authentication method are disclosed. The biometrics authentication apparatus includes: a light source configured to emit a light; a modulator configured to change a spatial distribution of the light that is scattered and reflected from a region of interest of a user; a detector configured to detect an integral power of the light that is scattered from the region of interest; and a processor configured to obtain a measurement signal based on the integral power of the light, compare the measurement signal with a reference signal stored in a memory, and determine whether to authenticate the user based on a degree of match between the measurement signal and the reference signal.
    Type: Grant
    Filed: February 28, 2017
    Date of Patent: May 21, 2019
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Alexey Dmitrievich Lantsov, Alexey Andreevich Shchekin, Maksim Vladimirovich Riabko, Anton Sergeevich Medvedev, Sergey Nikolaevich Koptyaev
  • Publication number: 20170286741
    Abstract: A biometrics authentication apparatus and a biometrics authentication method are disclosed. The biometrics authentication apparatus includes: a light source configured to emit a light; a modulator configured to change a spatial distribution of the light that is scattered and reflected from a region of interest of a user; a detector configured to detect an integral power of the light that is scattered from the region of interest; and a processor configured to obtain a measurement signal based on the integral power of the light, compare the measurement signal with a reference signal stored in a memory, and determine whether to authenticate the user based on a degree of match between the measurement signal and the reference signal.
    Type: Application
    Filed: February 28, 2017
    Publication date: October 5, 2017
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Alexey Dmitrievich LANTSOV, Alexey Andreevich SHCHEKIN, Maksim Vladimirovich RIABKO, Anton Sergeevich MEDVEDEV, Sergey Nikolaevich KOPTYAEV