Abstract: The present disclosure provides methodologies for manufacturing photovoltaic devices. In particular, the disclosure relates to the use of hydrogen during manufacturing of photovoltaic devices for passivating defects in the silicon and addressing light-induced degradation. The methodologies in the present disclosures take advantage of generation and manipulation of hydrogen in the neutral or charged state to optimise defect passivation. Some of the methodologies disclose use thermal treatments, illumination with sub-bandgap photons, electric fields or defects in the silicon to control the state of charge or hydrogen, move hydrogen to different locations in the device or retain hydrogen at specific locations.

Abstract: The present disclosure is directed to a method for processing a silicon wafer that allows improving performance by exploiting the properties of crystallographic imperfections. The method comprises the steps of: forming a silicon layer with crystallographic imperfections in the proximity of a surface of the silicon; exposing at least a portion of the device to hydrogen atoms in a manner such that hydrogen atoms migrate towards the region with crystallographic imperfections and into the silicon along the crystallographic imperfections; and controlling the charge state of hydrogen atoms located at the crystallographic imperfections to be positive when the imperfections are in a p-type region of the wafer; and negative when the imperfections are at an n-type region of the wafer by thermally treating the silicon while exposing the silicon to an illumination intensity of less than 10 mW/cm2.

Abstract: The present disclosure provides a method for accelerating the formation of defects in doped silicon. A doped silicon area is exposed with high intensity electromagnetic radiation to provide a substantial excess of majority carriers and promote a high rate of defect formation to allow efficient silicon passivation.

Abstract: The present disclosure provides methodologies for manufacturing photovoltaic devices. In particular, the disclosure relates to the use of hydrogen during manufacturing of photovoltaic devices for passivating defects in the silicon and addressing light-induced degradation. The methodologies in the present disclosures take advantage of generation and manipulation of hydrogen in the neutral or charged state to optimise defect passivation. Some of the methodologies disclose use thermal treatments, illumination with sub-bandgap photons, electric fields or defects in the silicon to control the state of charge or hydrogen, move hydrogen to different locations in the device or retain hydrogen at specific locations.

Abstract: The present disclosure is directed to a method for processing a silicon wafer that allows improving performance by exploiting the properties of crystallographic imperfections. The method comprises the steps of: forming a silicon layer with crystallographic imperfections in the proximity of a surface of the silicon; exposing at least a portion of the device to hydrogen atoms in a manner such that hydrogen atoms migrate towards the region with crystallographic imperfections and into the silicon along the crystallographic imperfections; and controlling the charge state of hydrogen atoms located at the crystallographic imperfections to be positive when the imperfections are in a p-type region of the wafer; and negative when the imperfections are at an n-type region of the wafer by thermally treating the silicon while exposing the silicon to an illumination intensity of less than 10 mW/cm2.

Abstract: The present disclosure provides methods for manufacturing a photovoltaic device that comprise a sequence of annealing steps and exposure to electromagnetic radiation during annealing that allow passivating electrically active defects and stabilising the performance of photovoltaic device.

Abstract: The present disclosure provides methods for manufacturing a photovoltaic device that comprise a sequence of annealing steps and exposure to electromagnetic radiation during annealing that allow passivating electrically active defects and stabilising the performance of photovoltaic device.

Abstract: The present disclosure provides a method for accelerating the formation of defects in doped silicon. A doped silicon area is exposed with high intensity electromagnetic radiation to provide a substantial excess of majority carriers and promote a high rate of defect formation to allow efficient silicon passivation.