Abstract: A capacitive structure formed in an Integrated Circuit (IC) includes a plurality of capacitor node conductor pairs, each including a first node conductor having a base portion and a plurality of finger portions and a second node conductor having a base portion and a plurality of finger portions that are inter digitized with the plurality of finger portions of the first node conductor. Dielectric is horizontally disposed between the first node conductor and the second node conductor. At least one dielectric layer vertically separates adjacent metal layers, each dielectric layer including dielectric disposed between the adjacent metal layers, a plurality of first node vias vertically connecting finger portions of first node conductors of the adjacent metal layers, and a plurality of second node vias vertically connecting finger portions of the second node conductors of the adjacent metal layers.

Abstract: Forming a wafer level chip scale flip chip package includes determining isolation requirements of an integrated circuit formed in a semi conductive substrate from package signal connections of the wafer level chip scale flip chip package. Operation may further include, based upon the integrated circuit characteristics, selecting a thickness of at least one dielectric layer isolating a top metal layer of the integrated circuit from the package signal connections of the wafer level chip scale flip chip package, determining a minimum pitch of the package signal connections of the wafer level chip scale flip chip package, and determining a maximum lateral distance from the signal pad to a servicing package signal connection of the wafer level chip scale flip chip package and determining a position of the servicing package signal connection of the wafer level chip scale flip chip package based upon the maximum lateral distance.

Abstract: Forming a wafer level chip scale flip chip package includes determining isolation requirements of an integrated circuit formed in a semi conductive substrate from package signal connections of the wafer level chip scale flip chip package. Operation may further include, based upon the integrated circuit characteristics, selecting a thickness of at least one dielectric layer isolating a top metal layer of the integrated circuit from the package signal connections of the wafer level chip scale flip chip package, determining a minimum pitch of the package signal connections of the wafer level chip scale flip chip package, and determining a maximum lateral distance from the signal pad to a servicing package signal connection of the wafer level chip scale flip chip package and determining a position of the servicing package signal connection of the wafer level chip scale flip chip package based upon the maximum lateral distance.