Patents by Inventor Malcolm R. Green
Malcolm R. Green has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230261432Abstract: Techniques for efficient alignment of a semiconductor laser in a Photonic Integrated Circuit (PIC) are disclosed. In some embodiments, a photonic integrated circuit (PIC) may include a semiconductor laser that includes a laser mating surface, and a substrate that includes a substrate mating surface. A shape of the laser mating surface and a shape of the substrate mating surface may be configured to align the semiconductor laser with the substrate in three dimensions.Type: ApplicationFiled: April 26, 2023Publication date: August 17, 2023Inventors: Roe HEMENWAY, Cristian STAGARESCU, Daniel MEEROVICH, Malcolm R. GREEN, Wolfgang PARZ, Jichi MA, Richard Robert GRZYBOWSKI, Nathan BICKEL
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Publication number: 20230246421Abstract: A laser structure may include a substrate, an active region arranged on the substrate, and a waveguide arranged on the active region. The waveguide may include a first surface and a second surface that join to form a first angle relative to the active region. A material may be deposited on the first surface and the second surface of the waveguide.Type: ApplicationFiled: February 24, 2023Publication date: August 3, 2023Inventors: Ali Badar Alamin DOW, Jason Daniel BOWKER, Malcolm R. GREEN
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Patent number: 11658459Abstract: Techniques for efficient alignment of a semiconductor laser in a Photonic Integrated Circuit (PIC) are disclosed. In some embodiments, a photonic integrated circuit (PIC) may include a semiconductor laser that includes a laser mating surface, and a substrate that includes a substrate mating surface. A shape of the laser mating surface and a shape of the substrate mating surface may be configured to align the semiconductor laser with the substrate in three dimensions.Type: GrantFiled: July 16, 2018Date of Patent: May 23, 2023Assignee: MACOM Technology Solutions Holdings, Inc.Inventors: Roe Hemenway, Cristian Stagarescu, Daniel Meerovich, Malcolm R. Green, Wolfgang Parz, Jichi Ma, Richard Robert Grzybowski, Nathan Bickel
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Patent number: 11605933Abstract: A laser structure may include a substrate, an active region arranged on the substrate, and a waveguide arranged on the active region. The waveguide may include a first surface and a second surface that join to form a first angle relative to the active region. A material may be deposited on the first surface and the second surface of the waveguide.Type: GrantFiled: November 8, 2019Date of Patent: March 14, 2023Assignee: MACOM Technology Solutions Holdings, Inc.Inventors: Ali Badar Alamin Dow, Jason Daniel Bowker, Malcolm R. Green
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Publication number: 20220302678Abstract: Semiconductors lasers are disclosed having an active region having a longitudinal axis, a first facet end, and a second facet end. The second facet end emitting the main output beam of light from of the respective semiconductor laser. The first facet end may have a low-reflection coating. The first facet end may be non-perpendicular to the longitudinal axis of the active region. The semiconductor lasers may be distributed feedback (DFB) lasers having a plurality of diffraction gratings along the longitudinal axis of the active region. The plurality of diffraction grating may include a first diffraction grating positioned proximate the first end of the active region, a second diffraction grating positioned proximate the second end of the active region, and a third diffraction grating positioned between the first diffraction grating and the second diffraction grating.Type: ApplicationFiled: March 17, 2021Publication date: September 22, 2022Applicant: MACOM Technology Solutions Holdings, Inc.Inventors: Yifan Jiang, Malcolm R. Green, Wolfgang Parz, Lihua Hu
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Publication number: 20220263286Abstract: A semiconductor laser may include an active region having a longitudinal axis, a rear facet end and a front facet end. The front facet end emitting an output beam of the semiconductor laser. The semiconductor laser may include a plurality of diffraction gratings positioned along the longitudinal axis of the active region. The plurality of diffraction gratings including a first diffraction grating positioned proximate the rear facet end of the active region and at least one additional diffraction grating positioned longitudinally between the first diffraction grating and the front facet. The first diffraction grating having a first kappa value and the at least one additional diffraction grating having at least a second kappa value, the first kappa value being greater than the second kappa value.Type: ApplicationFiled: February 16, 2021Publication date: August 18, 2022Applicant: MACOM Technology Solutions Holdings, Inc.Inventor: Malcolm R. Green
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Publication number: 20200076164Abstract: A laser structure may include a substrate, an active region arranged on the substrate, and a waveguide arranged on the active region. The waveguide may include a first surface and a second surface that join to form a first angle relative to the active region. A material may be deposited on the first surface and the second surface of the waveguide.Type: ApplicationFiled: November 8, 2019Publication date: March 5, 2020Inventors: Ali Badar Alamin DOW, Jason Daniel BOWKER, Malcolm R. GREEN
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Publication number: 20180342851Abstract: Techniques for efficient alignment of a semiconductor laser in a Photonic Integrated Circuit (PIC) are disclosed. In some embodiments, a photonic integrated circuit (PIC) may include a semiconductor laser that includes a laser mating surface, and a substrate that includes a substrate mating surface. A shape of the laser mating surface and a shape of the substrate mating surface may be configured to align the semiconductor laser with the substrate in three dimensions.Type: ApplicationFiled: July 16, 2018Publication date: November 29, 2018Applicant: MACOM Technology Solutions Holdings, Inc.Inventors: Roe HEMENWAY, Cristian STAGARESCU, Daniel MEEROVICH, Malcolm R. GREEN, Wolfgang PARZ, Jichi MA, Richard Robert GRZYBOWSKI, Nathan BICKEL
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Patent number: 10044168Abstract: A laser chip having a substrate, an epitaxial structure on the substrate, the epitaxial structure including an active region and the active region generating light, a waveguide formed in the epitaxial structure extending in a first direction, the waveguide having a front etched facet and a back etched facet that define an edge-emitting laser, and a first recessed region formed in the epitaxial structure, the first recessed region being arranged at a distance from the waveguide and having an opening adjacent to the back etched facet, the first recessed region facilitating testing of an adjacent laser chip prior to singulation of the laser chip.Type: GrantFiled: December 1, 2017Date of Patent: August 7, 2018Assignee: MACON TECHNOLOGY SOLUTIONS HOLDINGS, INC.Inventors: Alex A. Behfar, Malcolm R. Green, Cristian Stagarescu
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Patent number: 10038298Abstract: A laser chip having a substrate, an epitaxial structure on the substrate, the epitaxial structure including an active region and the active region generating light, a waveguide formed in the epitaxial structure extending in a first direction, the waveguide having a front etched facet and a back etched facet that define an edge-emitting laser, and a first recessed region formed in the epitaxial structure, the first recessed region being arranged at a distance from the waveguide and having an opening adjacent to the back etched facet, the first recessed region facilitating testing of an adjacent laser chip prior to singulation of the laser chip.Type: GrantFiled: December 1, 2017Date of Patent: July 31, 2018Assignee: MACOM TECHNOLOGY SOLUTIONS HOLDINGS, INC.Inventors: Alex A. Behfar, Malcolm R. Green, Cristian Stagarescu
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Patent number: 10027087Abstract: Techniques for efficient alignment of a semiconductor laser in a Photonic Integrated Circuit (PIC) are disclosed. In some embodiments, a photonic integrated circuit (PIC) may include a semiconductor laser that includes a laser mating surface, and a substrate that includes a substrate mating surface. A shape of the laser mating surface and a shape of the substrate mating surface may be configured to align the semiconductor laser with the substrate in three dimensions.Type: GrantFiled: February 17, 2017Date of Patent: July 17, 2018Assignee: MACOM Technology Solutions Holdings, Inc.Inventors: Roe Hemenway, Cristian Stagarescu, Daniel Meerovich, Malcolm R. Green, Wolfgang Parz, Jichi Ma, Richard Robert Grzybowski, Nathan Bickel
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Publication number: 20180109070Abstract: A laser chip having a substrate, an epitaxial structure on the substrate, the epitaxial structure including an active region and the active region generating light, a waveguide formed in the epitaxial structure extending in a first direction, the waveguide having a front etched facet and a back etched facet that define an edge-emitting laser, and a first recessed region formed in the epitaxial structure, the first recessed region being arranged at a distance from the waveguide and having an opening adjacent to the back etched facet, the first recessed region facilitating testing of an adjacent laser chip prior to singulation of the laser chip.Type: ApplicationFiled: December 1, 2017Publication date: April 19, 2018Applicant: MACOM Technology Solutions Holdings, Inc.Inventors: Alex A. BEHFAR, Malcolm R. GREEN, Cristian STAGARESCU
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Publication number: 20180090907Abstract: A laser chip having a substrate, an epitaxial structure on the substrate, the epitaxial structure including an active region and the active region generating light, a waveguide formed in the epitaxial structure extending in a first direction, the waveguide having a front etched facet and a back etched facet that define an edge-emitting laser, and a first recessed region formed in the epitaxial structure, the first recessed region being arranged at a distance from the waveguide and having an opening adjacent to the back etched facet, the first recessed region facilitating testing of an adjacent laser chip prior to singulation of the laser chip.Type: ApplicationFiled: December 1, 2017Publication date: March 29, 2018Applicant: MACOM Technology Solutions Holdings, Inc.Inventors: Alex A. BEHFAR, Malcolm R. GREEN, Cristian STAGARESCU
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Patent number: 9893488Abstract: A laser chip having a substrate, an epitaxial structure on the substrate, the epitaxial structure including an active region and the active region generating light, a waveguide formed in the epitaxial structure extending in a first direction, the waveguide having a front etched facet and a back etched facet that define an edge-emitting laser, and a first recessed region formed in the epitaxial structure, the first recessed region being arranged at a distance from the waveguide and having an opening adjacent to the back etched facet, the first recessed region facilitating testing of an adjacent laser chip prior to singulation of the laser chip.Type: GrantFiled: January 13, 2015Date of Patent: February 13, 2018Assignee: MACOM TECHNOLOGY SOLUTIONS HOLDINGS, INC.Inventors: Alex A. Behfar, Malcolm R. Green, Cristian Stagarescu
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Publication number: 20170338625Abstract: A laser structure may include a substrate, an active region arranged on the substrate, and a waveguide arranged on the active region. The waveguide may include a first surface and a second surface that join to form a first angle relative to the active region. A material may be deposited on the first surface and the second surface of the waveguide.Type: ApplicationFiled: May 19, 2017Publication date: November 23, 2017Applicant: MACOM Technology Solutions Holdings, Inc.Inventors: Ali Badar Alamin DOW, Jason Daniel BOWKER, Malcolm R. GREEN
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Publication number: 20170244216Abstract: Techniques for efficient alignment of a semiconductor laser in a Photonic Integrated Circuit (PIC) are disclosed. In some embodiments, a photonic integrated circuit (PIC) may include a semiconductor laser that includes a laser mating surface, and a substrate that includes a substrate mating surface. A shape of the laser mating surface and a shape of the substrate mating surface may be configured to align the semiconductor laser with the substrate in three dimensions.Type: ApplicationFiled: February 17, 2017Publication date: August 24, 2017Applicant: MACOM Technology Solutions Holdings, Inc.Inventors: Roe HEMENWAY, Cristian STAGARESCU, Daniel MEEROVICH, Malcolm R. GREEN, Wolfgang PARZ, Jichi MA, Richard Robert GRZYBOWSKI, Nathan BICKEL
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Publication number: 20150123695Abstract: A laser chip having a substrate, an epitaxial structure on the substrate, the epitaxial structure including an active region and the active region generating light, a waveguide formed in the epitaxial structure extending in a first direction, the waveguide having a front etched facet and a back etched facet that define an edge-emitting laser, and a first recessed region formed in the epitaxial structure, the first recessed region being arranged at a distance from the waveguide and having an opening adjacent to the back etched facet, the first recessed region facilitating testing of an adjacent laser chip prior to singulation of the laser chip.Type: ApplicationFiled: January 13, 2015Publication date: May 7, 2015Applicant: BinOptics CorporationInventors: Alex A. BEHFAR, Malcolm R. GREEN, Cristian STAGARESCU
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Patent number: 8934512Abstract: A laser chip having a substrate, an epitaxial structure on the substrate, the epitaxial structure including an active region and the active region generating light, a waveguide formed in the epitaxial structure extending in a first direction, the waveguide having a front etched facet and a back etched facet that define an edge-emitting laser, and a first recessed region formed in said epitaxial structure, the first recessed region being arranged at a distance from the waveguide and having an opening adjacent to the back etched facet, the first recessed region facilitating testing of an adjacent laser chip prior to singulation of the laser chip.Type: GrantFiled: November 30, 2012Date of Patent: January 13, 2015Assignee: BinOptics CorporationInventors: Alex A. Behfar, Malcolm R. Green, Cristian Stagarescu
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Patent number: 8306087Abstract: A laser and electroabsorption modulator (EAM) are monolithically integrated through an etched facet process. Epitaxial layers on a wafer include a first layer for a laser structure and a second layer for an EAM structure. Strong optical coupling between the laser and the EAM is realized by using two 45-degree turning mirrors to route light vertically from the laser waveguide to the EAM waveguide. A directional angled etch process is used to form the two angled facets.Type: GrantFiled: December 17, 2009Date of Patent: November 6, 2012Assignee: Binoptics CorporationInventors: Alex A. Behfar, Malcolm R. Green, Alfred T. Schremer
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Patent number: 7972879Abstract: A laser and electroabsorption modulator (EAM) are monolithically integrated through an etched facet process. Epitaxial layers on a wafer include a first layer for a laser structure and a second layer for an EAM structure. Strong optical coupling between the laser and the EAM is realized by using two 45-degree turning mirrors to route light vertically from the laser waveguide to the EAM waveguide. A directional angled etch process is used to form the two angled facets.Type: GrantFiled: December 17, 2009Date of Patent: July 5, 2011Assignee: Binoptics CorporationInventors: Alex A. Behfar, Malcolm R. Green, Alfred T. Schremer