Patents by Inventor Malcom J. Bevan

Malcom J. Bevan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for conformal treatment of dielectric films using inductively coupled plasma
    Patent number: 9012336
    Abstract: Disclosed are apparatus and methods for processing a substrate. The substrate having a feature with a layer thereon is exposed to an inductively coupled plasma which forms a substantially conformal layer.
    Type: Grant
    Filed: April 8, 2013
    Date of Patent: April 21, 2015
    Assignee: Applied Materials, Inc.
    Inventors: Heng Pan, Matthew Scott Rogers, Johanes F. Swenberg, Christopher S. Olsen, Wei Liu, David Chu, Malcom J. Bevan
  • METHOD AND APPARATUS FOR SELECTIVE NITRIDATION PROCESS
    Publication number: 20130040444
    Abstract: Embodiments of the invention provide an improved apparatus and methods for nitridation of stacks of materials. In one embodiment, a remote plasma system includes a remote plasma chamber defining a first region for generating a plasma comprising ions and radicals, a process chamber defining a second region for processing a semiconductor device, the process chamber comprising an inlet port formed in a sidewall of the process chamber, the inlet port being in fluid communication with the second region, and a delivery member disposed between the remote plasma chamber and the process chamber and having a passageway in fluid communication with the first region and the inlet port, wherein the delivery member is configured such that a longitudinal axis of the passageway intersects at an angle of about 20 degrees to about 80 degrees with respect to a longitudinal axis of the inlet port.
    Type: Application
    Filed: June 28, 2012
    Publication date: February 14, 2013
    Applicant: Applied Materials, Inc.
    Inventors: MATTHEW S. ROGERS, Roger Curtis, Lara Hawrylchak, Ken Kaung Lai, Bernard L. Hwang, Jeffrey Tobin, Christopher Olsen, Malcom J. Bevan
  • CVD deposition of M-ON gate dielectrics
    Publication number: 20040002183
    Abstract: A method for forming a high-k gate dielectric film (106) by CVD of a M-N or M-ON, such as HfON. Post deposition anneals are used to adjust the nitrogen concentration.
    Type: Application
    Filed: June 28, 2002
    Publication date: January 1, 2004
    Inventors: Luigi Colombo, Mark R. Visokay, Malcom J. Bevan, Antonio L. P. Rotondaro