Abstract: A device for characterising at least one liquid material includes an analysis head and a rotating mechanical mixer. The mixer includes a central part having an internal cavity which forms an analysis chamber, a first end connected to the analysis head, and a plurality of stirring blades which are connected to a second end that is hollow so as to ensure fluid communication between the internal cavity and the liquid bath. The mechanical stirring blades are intended to be totally submerged, the central part comprises one or more openings intended to be partially submerged, and each mechanical stirring blade comprises at least one stirring flange oriented at a non-zero angle of orientation.

Abstract: A device for characterising at least one liquid material includes an analysis head and a rotating mechanical mixer. The mixer includes a central part having an internal cavity which forms an analysis chamber, a first end connected to the analysis head, and a plurality of stirring blades which are connected to a second end that is hollow so as to ensure fluid communication between the internal cavity and the liquid bath. The mechanical stirring blades are intended to be totally submerged, the central part comprises one or more openings intended to be partially submerged, and each mechanical stirring blade comprises at least one stirring flange oriented at a non-zero angle of orientation.

Abstract: A method for manufacturing a silicon ingot having uniform phosphorus concentration. The method includes at least the steps of: (i) providing a quasi-uniform molten silicon bath containing at least phosphorus; and (ii) proceeding to the directional solidification of the silicon, wherein a speed (VI) for solidifying the silicon and a rate (JLV) of evaporation of the phosphorus at the liquid/vapor interface of the bath are controlled such that, at each moment of the directional solidification, the following equation is verified: VI=k?/(2?k) (E), wherein k? is the phosphorus transfer coefficient, and k is the distribution coefficient of the phosphorus in the silicon. Also relates to a silicon ingot having uniform phosphorus concentration across a height of at least 20 cm.

Abstract: A device for analyzing at least one oxidizable molten metal using a LIBS technique, including: a LIBS analyzer; a mechanical rotary mechanism stirring a liquid bath of the at least one oxidizable molten metal, and including a central section, to be positioned above the liquid bath of the at least one oxidizable molten metal, including an internal cavity forming an analysis chamber, the central section including a first end connected to the LIBS analyzer, and a plurality of mechanical stirring paddles to be partially submerged in the liquid bath of the at least one oxidizable molten metal and that are connected to a second end of the central section opposite the first end of the central section, the LIBS analyzer configured to allow the surface of the at least one oxidizable molten metal located in the portion plumb with the internal cavity of the central portion to be analyzed.

Abstract: A device for analyzing at least one oxidizable molten metal using a LIBS technique, including: a LIBS analyzer; a mechanical rotary mechanism stirring a liquid bath of the at least one oxidizable molten metal, and including a central section, to be positioned above the liquid bath of the at least one oxidizable molten metal, including an internal cavity forming an analysis chamber, the central section including a first end connected to the LIBS analyzer, and a plurality of mechanical stirring paddles to be partially submerged in the liquid bath of the at least one oxidizable molten metal and that are connected to a second end of the central section opposite the first end of the central section, the LIBS analyzer configured to allow the surface of the at least one oxidizable molten metal located in the portion plumb with the internal cavity of the central portion to be analyzed.

Abstract: The invention relates to a process of use for deoxidizing silicon particles comprising at least the steps consisting in: (i) having surface-oxidized silicon particles that have a mean size of less than or equal to 10 ?m, (ii) formulating said particles into the form of aggregates having a mean size ranging from 20 to 300 ?m, (iii) bringing said aggregates from step (ii) into contact with a thermal plasma conveying hydrogen radicals under conditions suitable for the deoxidation thereof and for the non-evaporation thereof, and (iv) recovering a material deoxidized according to step (iii) in a liquid silicon bath.

Abstract: A method for manufacturing a silicon ingot having uniform phosphorus concentration. The method includes at least the steps of: (i) providing a quasi-uniform molten silicon bath containing at least phosphorus; and (ii) proceeding to the directional solidification of the silicon, wherein a speed (VI) for solidifying the silicon and a rate (JLV) of evaporation of the phosphorus at the liquid/vapor interface of the bath are controlled such that, at each moment of the directional solidification, the following equation is verified: VI=k?/(2?k) (E), wherein k? is the phosphorus transfer coefficient, and k is the distribution coefficient of the phosphorus in the silicon. Also relates to a silicon ingot having uniform phosphorus concentration across a height of at least 20 cm.

Abstract: The invention relates to a method for forming a crystallised silicon layer having a crystallite size higher than or equal to 100 ?m, by the epitaxial growth in a vapour phase, on the surface of at least one silicon substrate, including at least the steps: (i) providing a silicon substrate having a particle size higher than or equal to 100 ?m and including a metal impurities content of between 0 ppb and 1 ppm by weight; and (ii) forming the silicon layer on the surface of the substrate heated to a temperature of between 1000 and 1300° C., by decomposition of at least one silicon precursor by unit of an inductive plasma torch, the surface of the substrate for supporting the silicon layer being positioned close to the outlet of the plasma torch in step (ii).