Abstract: A controller configured for detecting a disturbance using a comparison of outputs of at least two sensors and for determining a pressure from the outputs of the at least two sensors. A ratio of the measurement sensitivity and the disturbance sensitivity should be different for the at least two sensors. A method for monitoring disturbances of a sensor assembly includes comparing the outputs of the at least two sensors. The controller and related method provide, while requiring only two sensors, a redundant system that is also able to detect excessive disturbances on a sensor assembly.

Abstract: A piezo-resistor sensor includes a diffusion of a first conductivity type in a well of an opposite second type, contacts with islands in the diffusion, interconnects with the contacts, and a shield covers the diffusion between the contacts and extends over side walls of the diffusion between the contacts. Each interconnect covers the diffusion at the corresponding contact and extends over edges of the diffusion, and each island is at a side covered by its interconnect. A guard ring of the second type is around the diffusion. The shield covers the well between the diffusion and the ring and the edge of the ring facing the diffusion. If a gap between the shield and the interconnect is present, the ring bridges this gap, and/or the edges of the diffusion are completely covered by the combination of the shield and the interconnects.

Abstract: A controller configured for monitoring disturbances of a pressure sensor assembly includes at least two sensors. The at least two sensors are configured for measuring a pressure and wherein the at least two sensors have a sensor dependent measurement sensitivity for the pressure, and at least one of the sensors is sensitive for a disturbance with a sensor dependent disturbance sensitivity. A ratio of the measurement sensitivity and the disturbance sensitivity is different for the at least two sensors. The controller is configured for detecting the disturbance by comparing outputs of the at least two sensors.

Abstract: A piezo-resistor sensor includes a diffusion of a first conductivity type in a well of an opposite second type, contacts with islands in the diffusion, interconnects with the contacts, and a shield covers the diffusion between the contacts and extends over side walls of the diffusion between the contacts. Each interconnect covers the diffusion at the corresponding contact and extends over edges of the diffusion, and each island is at a side covered by its interconnect. A guard ring of the second type is around the diffusion. The shield covers the well between the diffusion and the ring and the edge of the ring facing the diffusion. If a gap between the shield and the interconnect is present, the ring bridges this gap, and/or the edges of the diffusion are completely covered by the combination of the shield and the interconnects.

Abstract: A piezo-resistor-based sensor, and a method to fabricate such sensor, comprise a sensor having at least a sensing element provided on a flexible structure, such as a membrane or cantilever or the like. The sensing element includes at least one piezo-resistor comprising at least a first region of the flexible structure doped with dopant atoms of a first type. The flexible structure furthermore comprises a second doped region within it, at least partially overlapping the first doped region, forming a shield for shielding the sensing element from external electrical field interference, wherein dopant atoms of the second doped region are of a second type opposite to the dopant atoms of the first doped region, for generating a charge depletion layer within the flexible structure at the overlapping region between the first doped region and the second doped region.

Abstract: A piezo-resistor-based sensor, and a method to fabricate such sensor, comprise a sensor having at least a sensing element provided on a flexible structure, such as a membrane or cantilever or the like. The sensing element includes at least one piezo-resistor comprising at least a first region of the flexible structure doped with dopant atoms of a first type. The flexible structure furthermore comprises a second doped region within it, at least partially overlapping the first doped region, forming a shield for shielding the sensing element from external electrical field interference, wherein dopant atoms of the second doped region are of a second type opposite to the dopant atoms of the first doped region, for generating a charge depletion layer within the flexible structure at the overlapping region between the first doped region and the second doped region.

Abstract: The disclosed technology relates generally to electromechanical devices, and relates more specifically to a nanoelectromechanical switch device and a method for manufacturing the same. In one aspect, an electromechanical device includes a first electrode stack and a second electrode stack, both electrode stacks extending in a vertical direction relative to a substrate surface and being spaced apart by a gap.

Abstract: A non-volatile memory arrangement comprising a plurality of cells is disclosed. In one aspect, each cell comprises a memory element and a read selector in series. Further, the memory element is a nano-electro-mechanical switch comprising an anchor, a beam fixed to the anchor, a first and second control gate, for controlling the position of the beam, a first output node against which the beam can be positioned. The cell also comprises a read selector comprising a first selector terminal, a second selector terminal, the first selector terminal connected to the first output node. The first respectively second control gates of switches of a same word are connected together by a first respectively second write word line serving as control gate.

Abstract: A non-volatile memory arrangement comprising a plurality of cells is disclosed. In one aspect, each cell comprises a memory element and a read selector in series. Further, the memory element is a nano-electro-mechanical switch comprising an anchor, a beam fixed to the anchor, a first and second control gate, for controlling the position of the beam, a first output node against which the beam can be positioned. The cell also comprises a read selector comprising a first selector terminal, a second selector terminal, the first selector terminal connected to the first output node. The first respectively second control gates of switches of a same word are connected together by a first respectively second write word line serving as control gate.

Abstract: The disclosed technology relates generally to electromechanical devices, and relates more specifically to a nanoelectromechanical switch device and a method for manufacturing the same. In one aspect, an electromechanical device includes a first electrode stack and a second electrode stack, both electrode stacks extending in a vertical direction relative to a substrate surface and being spaced apart by a gap.