Abstract: A method for making interconnect structures, particularly in a semiconductor integrated circuit, is described. The method comprises the steps of: forming a conductive layer; forming of an insulating layer above said conductive layer; creating a plurality of holes in said insulating layer and filling the holes with tungsten thereby forming tungsten plugs, such that said tungsten plugs are in electrical contact with the conductive layer. A patterned metallisation layer that overlies said insulating layer (is formed by means of following steps: forming a continuous metallisation layer, forming an organic mask, etching in plasma said continuous metallisation layer, removing the organic mask in a dry way, and immersing the obtained wafer including the layers (3, 4, 5) and the tungsten plugs in a cleaning solution to remove the post-etching residues. Before immersing into said cleaning solution, the wafer is submitted to a plasma treatment containing F, H or a mixture of F and H.

Abstract: A method for making interconnect structures, particularly in a semiconductor integrated circuit, comprises the steps of: