Abstract: Provided are a method of transferring a tin sulfide film and a photoelectric device using the tin sulfide film. The method includes: forming a first tin sulfide film on a first substrate; placing a second substrate on the first tin sulfide film; and forming a second tin sulfide film bonded to a surface of the second substrate by transferring a portion of the first tin sulfide film to the second substrate through a rapid thermal process (RTP).

Abstract: Provided are a method of transferring a tin sulfide film and a photoelectric device using the tin sulfide film. The method includes: forming a first tin sulfide film on a first substrate; placing a second substrate on the first tin sulfide film; and forming a second tin sulfide film bonded to a surface of the second substrate by transferring a portion of the first tin sulfide film to the second substrate through a rapid thermal process (RTP).

Abstract: A transparent photoelectric element and a method for fabricating the same are provided. The method includes providing a transparent substrate, forming a transparent conductive film on the transparent substrate at room temperature, forming an n-type oxide semiconductor film on the transparent conductive film and forming a p-type nickel oxide film having a quantum dot structure on the n-type oxide semiconductor film through reactive sputtering at room temperature, the reactive sputtering including oxygen and argon, a ratio of oxygen being smaller than a ratio of argon.