Abstract: A digital radiographic detector uses an IGZO active layer in the switching element for each imaging pixel in a two-dimensional array of imaging pixels. Each imaging pixel has a photo-sensitive element and the switching element. Read-out circuits electrically connected to the two-dimensional array generate a radiographic image by reading out image data by switching on and off the switching elements. The IGZO active layer may be formed having a thickness less than about 7 nm.

Abstract: A digital radiographic detector uses an IGZO active layer in the switching element for each imaging pixel in a two-dimensional array of imaging pixels. Each imaging pixel has a photo-sensitive element and the switching element. Read-out circuits electrically connected to the two-dimensional array generate a radiographic image by reading out image data by switching on and off the switching elements. The IGZO active layer may be formed having a thickness less than about 7 nm.

Abstract: A digital radiographic detector uses an IGZO active layer in the switching element for each imaging pixel in a two-dimensional array of imaging pixels. Each imaging pixel has a photo-sensitive element and the switching element. Read-out circuits electrically connected to the two-dimensional array generate a radiographic image by reading out image data by switching on and off the switching elements. The IGZO active layer may be formed having a thickness less than about 7 nm.

Abstract: A digital radiographic detector uses an IGZO active layer in the switching element for each imaging pixel in a two-dimensional array of imaging pixels. Each imaging pixel has a photo-sensitive element and the switching element. Read-out circuits electrically connected to the two-dimensional array generate a radiographic image by reading out image data by switching on and off the switching elements. The IGZO active layer may be formed having a thickness less than about 7 nm.

Abstract: The present invention relates to a method for manufacturing an oxide semiconductor thin film transistor and to an actively operating display device and actively operating sensor display device using the same. A method for manufacturing an oxide semiconductor thin film transistor includes: forming a gate electrode by depositing and patterning a gate layer over a substrate; sequentially depositing a gate insulation film, an oxide semiconductor, and an etch stopper over the gate electrode and patterning the etch stopper; patterning the oxide semiconductor; forming a source electrode and a drain electrode over the patterned oxide semiconductor; and depositing a protective layer over the source electrode and the drain electrode and forming a contact hole in the protective layer, where the oxide semiconductor is formed to a thickness that is smaller than or equal to 4 nm.