Patents by Inventor Mami Goto

Mami Goto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Manufacturing method of semiconductor device
    Patent number: 7977222
    Abstract: Doping with suppressed filament deterioration can be performed even in the case of doping in various conditions with an ion doping apparatus having a filament. After ion doping is completed, supply of a material gas is stopped and hydrogen or a rare gas is kept to be supplied. After that, current of the filament is decreased and correspondingly, filament temperature is decreased. Accordingly, in decreasing the filament temperature, the material gas around the filament has been replaced with hydrogen or a rare gas.
    Type: Grant
    Filed: December 1, 2010
    Date of Patent: July 12, 2011
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Junichi Koezuka, Hiroshi Ohki, Taku Hasegawa, Mami Goto
  • MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
    Publication number: 20110070722
    Abstract: Doping with suppressed filament deterioration can be performed even in the case of doping in various conditions with an ion doping apparatus having a filament. After ion doping is completed, supply of a material gas is stopped and hydrogen or a rare gas is kept to be supplied. After that, current of the filament is decreased and correspondingly, filament temperature is decreased. Accordingly, in decreasing the filament temperature, the material gas around the filament has been replaced with hydrogen or a rare gas.
    Type: Application
    Filed: December 1, 2010
    Publication date: March 24, 2011
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Junichi KOEZUKA, Hiroshi OHKI, Taku HASEGAWA, Mami GOTO
  • Manufacturing method of semiconductor device
    Patent number: 7879701
    Abstract: Doping with suppressed filament deterioration can be performed even in the case of doping in various conditions with an ion doping apparatus having a filament. After ion doping is completed, supply of a material gas is stopped and hydrogen or a rare gas is kept to be supplied. After that, current of the filament is decreased and correspondingly, filament temperature is decreased. Accordingly, in decreasing the filament temperature, the material gas around the filament has been replaced with hydrogen or a rare gas.
    Type: Grant
    Filed: June 26, 2006
    Date of Patent: February 1, 2011
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Junichi Koezuka, Hiroshi Ohki, Taku Hasegawa, Mami Goto
  • Manufacturing method of semiconductor device
    Publication number: 20070023700
    Abstract: Doping with suppressed filament deterioration can be performed even in the case of doping in various conditions with an ion doping apparatus having a filament. After ion doping is completed, supply of a material gas is stopped and hydrogen or a rare gas is kept to be supplied. After that, current of the filament is decreased and correspondingly, filament temperature is decreased. Accordingly, in decreasing the filament temperature, the material gas around the filament has been replaced with hydrogen or a rare gas.
    Type: Application
    Filed: June 26, 2006
    Publication date: February 1, 2007
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Junichi Koezuka, Hiroshi Ohki, Taku Hasegawa, Mami Goto