Patents by Inventor Mami ITOSE

Mami ITOSE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • OXIDE SINTERED BODY, SPUTTERING TARGET AND OXIDE SEMICONDUCTOR FILM
    Publication number: 20210355033
    Abstract: An oxide sintered body is characterized in that it comprises an oxide including an In element, a Zn element, a Sn element and a Y element and that a sintered body density is equal to or more than 100.00% of a theoretical density.
    Type: Application
    Filed: June 25, 2021
    Publication date: November 18, 2021
    Applicant: IDEMITSU KOSAN CO., LTD.
    Inventors: Kazuyoshi INOUE, Futoshi UTSUNO, Shigekazu TOMAI, Masatoshi SHIBATA, Mami ITOSE
  • Oxide sintered body, sputtering target and oxide semiconductor film
    Patent number: 11078120
    Abstract: An oxide sintered body is characterized in that it comprises an oxide including an In element, a Zn element, a Sn element and a Y element and that a sintered body density is equal to or more than 100.00% of a theoretical density.
    Type: Grant
    Filed: April 26, 2017
    Date of Patent: August 3, 2021
    Assignee: IDEMITSU KOSAN CO., LTD.
    Inventors: Kazuyoshi Inoue, Futoshi Utsuno, Shigekazu Tomai, Masatoshi Shibata, Mami Itose
  • OXIDE SINTERED BODY, SPUTTERING TARGET AND OXIDE SEMICONDUCTOR FILM
    Publication number: 20200325072
    Abstract: An oxide sintered body is characterized in that it comprises an oxide including an In element, a Zn element, a Sn element and a Y element and that a sintered body density is equal to or more than 100.00% of a theoretical density.
    Type: Application
    Filed: April 26, 2017
    Publication date: October 15, 2020
    Applicant: IDEMITSU KOSAN CO., LTD.
    Inventors: Kazuyoshi INOUE, Futoshi UTSUNO, Shigekazu TOMAI, Masatoshi SHIBATA, Mami ITOSE
  • SPUTTERING TARGET, OXIDE SEMICONDUCTOR THIN FILM, THIN FILM TRANSISTOR, AND ELECTRONIC DEVICE
    Publication number: 20200235247
    Abstract: A sputtering target contains an oxide sinter that contains indium (In) element, tin element (Sn), zinc element (Zn), X element and oxygen, that further contains a spinel structure compound represented by Zn2SnO4, and that satisfies a formula (1) representing an atomic ratio of the elements. 0.001?X/(In+Sn+Zn+X)?0.05??(1) In the formula (1), In, Zn, Sn, and X represent contents of the In element, Zn element, Sn element, and X element in the oxide sinter, respectively, and the X element is at least one element selected from Ge, Si, Y, Zr, Al, Mg, Yb and Ga.
    Type: Application
    Filed: August 1, 2018
    Publication date: July 23, 2020
    Applicant: IDEMITSU KOSAN CO.,LTD.
    Inventors: Masashi OYAMA, Mami ITOSE