Abstract: A sputtering target including an oxide that includes an indium element (In), a tin element (Sn), a zinc element (Zn) and an aluminum element (Al), and including a homologous structure compound represented by InAlO3(ZnO)m (m is 0.1 to 10), wherein the atomic ratio of the indium element, the tin element, the zinc element and the aluminum element satisfies specific requirements.

Abstract: A sputtering target comprising an oxide sintered body that includes an indium element, a tin element and a zinc element, wherein the oxide sintered body includes one or more selected from a hexagonal layered compound represented by In2O3(ZnO)m, a hexagonal layered compound represented by InXO3(ZnO)n, a rutile structure compound represented by SnO2 and an ilmenite structure compound represented by ZnSnO3, and a spinel structure compound represented by Zn2SnO4, in the formulas, X is a metal element that can form a hexagonal layered compound together with an indium element and a zinc element, m is an integer of 1 or more and n is an integer of 1 or more, and an agglomerate of the spinel structure compound is 5% or less of the entire sintered body.

Abstract: A sputtering target including an oxide that includes an indium element (In), a tin element (Sn), a zinc element (Zn) and an aluminum element (Al), and including a homologous structure compound represented by InAlO3(ZnO)m (m is 0.1 to 10), wherein the atomic ratio of the indium element, the tin element, the zinc element and the aluminum element satisfies specific requirements.

Abstract: A sputtering target including indium (In), tin (Sn) and zinc (Zn) and an oxide including one or more elements X selected from the following group X, the atomic ratio of the elements satisfying the following formulas (1) to (4): Group X: Mg, Si, Al, Sc, Ti, Y, Zr, Hf, Ta, La, Nd, Sm 0.10?In/(In+Sn+Zn)?0.85??(1) 0.01?Sn/(In+Sn+Zn)?0.40??(2) 0.10?Zn/(In+Sn+Zn)?0.70??(3) 0.70?In/(In+X)?0.99??(4).

Abstract: A sputtering target comprising an oxide sintered body that includes an indium element, a tin element and a zinc element, wherein the oxide sintered body includes one or more selected from a hexagonal layered compound represented by In2O3(ZnO)m, a hexagonal layered compound represented by InXO3(ZnO)n, a rutile structure compound represented by SnO2 and an ilmenite structure compound represented by ZnSnO3, and a spinel structure compound represented by Zn2SnO4, in the formulas, X is a metal element that can form a hexagonal layered compound together with an indium element and a zinc element, m is an integer of 1 or more and n is an integer of 1 or more, and an agglomerate of the spinel structure compound is 5% or less of the entire sintered body.

Abstract: A sputtering target including an oxide A and InGaZnO4, the oxide A having a diffraction peak in regions A to K at 2?=7.0° to 8.4°, 30.6° to 32.0°, 33.8° to 35.8°, 53.5° to 56.5°, 56.5° to 59.5°, 14.8° to 16.2°, 22.3° to 24.3°, 32.2° to 34.2°, 43.1° to 46.1°, 46.2° to 49.2°, and 62.7° to 66.7°.

Abstract: A sputtering target including an oxide that, includes an indium element (In), a tin element (Sn), a zinc element (Zn) and an aluminum element (Al), and including a homologous structure compound represented by InAlO3ZnO)m (m is 0.1 to 10), wherein the atomic ratio of the indium element, the tin element, the zinc element and the aluminum element satisfies specific requirements.

Abstract: A thin film transistor including an active layer, and has a field-effect mobility of 25 cm2/Vs or more, the active layer being formed of an oxide that includes In, Ga, and Zn in an atomic ratio that falls within the following region 1, region 2, or region 3, the region 1 being defined by 0.58?In/(In+Ga+Zn)?0.68 and 0.15<Ga/(In+Ga+Zn)?0.29, the region 2 being defined by 0.45?In/(In+Ga+Zn)<0.58 and 0.09?Ga/(In+Ga+Zn)<0.20, and the region 3 being defined by 0.45?In/(In+Ga+Zn)<0.58 and 0.20?Ga/(In+Ga+Zn)?0.27.

Abstract: An oxide sintered body including indium element (In), gallium element (Ga) and tin element (Sn) in atomic ratios represented by the following formulas (1) to (3): 0.10?In/(In+Ga+Sn)?0.60??(1) 0.10?Ga/(In+Ga+Sn)?0.55??(2) 0.0001<Sn/(In+Ga+Sn)?0.60??(3).

Abstract: A sputtering target including an oxide A and InGaZnO4, the oxide A having a diffraction peak in regions A to K at 2?=7.0° to 8.4°, 30.6° to 32.0°, 33.8° to 35.8°, 53.5° to 56.5°, 56.5° to 59.5°, 14.8° to 16.2°, 22.3° to 24.3°, 32.2° to 34.2°, 43.1° to 46.1°, 46.2° to 49.2°, and 62.7° to 66.7°.

Abstract: A sputtering target including indium (In), tin (Sn) and zinc (Zn) and an oxide including one or more elements X selected from the following group X, the atomic ratio of the elements satisfying the following formulas (1) to (4): Group X: Mg, Si, Al, Sc, Ti, Y, Zr, Hf, Ta, La, Nd, Sm 0.10?In/(In+Sn+Zn)?0.85??(1) 0.01?Sn/(In+Sn+Zn)?0.40??(2) 0.10?Zn/(In+Sn+Zn)?0.70??(3) 0.70?In/(In+X)?0.

Abstract: A sputtering target including indium (In) and zinc (Zn) and an oxide including one or more elements X selected from the following group X, the atomic ratio of the elements satisfying the following formulas (1) and (2): Group X: Mg, Si, Al, Sc, Ti, Y, Zr, Hf, Ta, La, Nd, Sm 0.30?In/(In+Zn)?0.90??(1) 0.70?In/(In+X)?0.99??(2).

Abstract: A thin film transistor including an active layer, and has a field-effect mobility of 25 cm2/Vs or more, the active layer being formed of an oxide that includes In, Ga, and Zn in an atomic ratio that falls within the following region 1, region 2, or region 3, the region 1 being defined by 0.58?In/(In+Ga+Zn)?0.68 and 0.15<Ga/(In+Ga+Zn)?0.29, the region 2 being defined by 0.45?In/(In+Ga+Zn)<0.58 and 0.09?Ga/(In+Ga+Zn)<0.20, and the region 3 being defined by 0.45?In/(In+Ga+Zn)<0.58 and 0.20?Ga/(In+Ga+Zn)?0.27.

Abstract: A sputtering target including oxide A shown below and indium oxide (In2O3) having a bixbyite crystal structure: Oxide A: an oxide which includes an indium element (In), a gallium element (Ga) and a zinc element (Zn) in which diffraction peaks are observed at positions corresponding to incident angles (2?) of 7.0° to 8.4°, 30.6° to 32.0°, 33.8° to 35.8°, 53.5° to 56.5° and 56.5° to 59.5° in an X-ray diffraction measurement (CuK? rays).

Abstract: A semiconductor thin film includes one or more amorphous metal oxides, an OH group being bonded to at least some of the metal atoms of the amorphous metal oxides.

Abstract: An oxide sintered body including indium element (In), gallium element (Ga) and tin element (Sn) in atomic ratios represented by the following formulas (1) to (3): 0.10?In/(In+Ga+Sn)?0.60??(1) 0.10?Ga/(In+Ga+Sn)?0.55??(2) 0.0001<Sn/(In+Ga+Sn)?0.60??(3).

Abstract: A sputtering target including oxide A shown below and indium oxide (In2O3) having a bixbyite crystal structure: Oxide A: an oxide which includes an indium element (In), a gallium element (Ga) and a zinc element (Zn) in which diffraction peaks are observed at positions corresponding to incident angles (2?) of 7.0° to 8.4°, 30.6° to 32.0°, 33.8° to 35.8°, 53.5° to 56.5° and 56.5° to 59.5° in an X-ray diffraction measurement (CuK? rays).